ZXMS6005N8Q-13

Mfr. #:: ZXMS6005N8Q-13
Produttore:: Diodes Incorporated
Descrizione:: MOSFET Low Side IntelliFET
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: ZXMS6005N8Q-13 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: ZXMS6005N8Q-13 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Diodi incorporati

Categoria di prodotto:: MOSFET

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: SO-8

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 60 V

Id - Corrente di scarico continua:: 2 A

Rds On - Resistenza Drain-Source:: 150 mOhms

Vgs th - Tensione di soglia gate-source:: 700 mV

Vgs - Tensione Gate-Source:: 5 V

Temperatura di esercizio minima:: - 40 C

Temperatura massima di esercizio:: + 125 C

Pd - Dissipazione di potenza:: 1.65 W

Configurazione:: Separare

Modalità canale:: Aumento

Qualificazione:: AEC-Q101

Nome depositato:: IntelliFET

Confezione:: Bobina

Serie:: ZXMS6005N8Q

Tipo di transistor:: 1 N-Channel

Marca:: Diodi incorporati

Tempo di caduta:: 19 us

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 14 us

Quantità confezione di fabbrica:: 2500

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 34 us

Tempo di ritardo di accensione tipico:: 5 us

Tags: ZXMS6005, ZXMS6, ZXMS, ZXM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

ZXMS6005N8Q-13 Descrizione

***des Inc SCT: 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET, 2A, 1.65W

***ical: Current Limit SW 1-IN 1-OUT 0V to 5.5V 2A Automotive 8-Pin SO T/R

***et: Low Side IntelliFET SO-8 T&R 2.5K

***i-Key: IC PWR DRIVER N-CHAN 1:1 8SOIC

ZXMS6005N8Q-13 Maggiori informazioni

ZXMS6005N8 IntelliFET Self-Protected MOSFET: Diodes Inc. ZXMS6005N8 IntelliFET Self-Protected MOSFET is designed as a low-side, N-Channel MOSFET with logic-level input. The design integrates overcurrent, over-temperature, overvoltage (active clamp), and ESD-protected logic level functionality. These features allow the MOSFET to provide immunity from radiated and conducted emissions in harsh environments. Designers can use the ZXMS6005N8 MOSFET as a general-purpose switch driven from 3.3V or 5V microcontrollers. The ZXMS6005N8 MOSFET offers 60V continuous drain source voltage, 200mΩ on-state resistance, 2.8A nominal load current, and 490mJ clamping energy. With its wide array of protection features, the ZXMS6005N8 IntelliFET is ideal for harsh environments where standard MOSFET may not be rugged enough.Learn More

Automotive MOSFETs: Diodes Incorporated Automotive MOSFETs meet the stringent requirements of the AEC-Q101 reliability standard of the Automotive Electronics Council. Products with a 'Q' suffix indicate that the product is Automotive grade. This means the device has passed the rigorous AEC-Q101 standard and is fully supported for Automotive applications. The MOSFETs support customers with the PPAP (Production Part Approval Process), and TS16949 approved manufacturing sites.

IntelliFET Self-Protected MOSFETs: Diodes Inc. IntelliFET Self-Protected MOSFETs integrate a power MOSFET with a complete array of protection circuits. These protections guard against ESD, over-current, over-voltage and over-temperature conditions. Intelligent MOSFETs sense potentially catastrophic conditions and protects themselves and the connected loads. These protection functions improve overall system reliability. Additional features like status flags provide diagnostic capabilities that aid isolation and rectification faults within a vehicle.

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: ZXMS6003GTA OMO.#: OMO-ZXMS6003GTA	MOSFET 60V IntelliFET Over Current Ctrl
	Mfr.#: ZXMS6001N3QTA OMO.#: OMO-ZXMS6001N3QTA	MOSFET Low Side IntelliFET
	Mfr.#: ZXMS6002G OMO.#: OMO-ZXMS6002G-1190	Nuovo e originale
	Mfr.#: ZXMS6002GQTA OMO.#: OMO-ZXMS6002GQTA-DIODES	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
	Mfr.#: ZXMS6004FF OMO.#: OMO-ZXMS6004FF-1190	Nuovo e originale
	Mfr.#: ZXMS6004FFQ OMO.#: OMO-ZXMS6004FFQ-1190	Nuovo e originale
	Mfr.#: ZXMS6004SGTA OMO.#: OMO-ZXMS6004SGTA-DIODES	Power Switch Lo Side 0.7A Automotive 4-Pin(3+Tab) SOT-223 T/R
	Mfr.#: ZXMS6005DGQTA OMO.#: OMO-ZXMS6005DGQTA-DIODES	60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET
	Mfr.#: ZXMS6006DGTA OMO.#: OMO-ZXMS6006DGTA-DIODES	Trans MOSFET N-CH 60V Automotive 4-Pin(3+Tab) SOT-223 T/R
	Mfr.#: ZXMS6001N3TA OMO.#: OMO-ZXMS6001N3TA-DIODES	Power Switch ICs - Power Distribution 60V LO INPT CURR SELF PROT LO SD SWCH

Disponibilità

Azione:: Available
Su ordine:: 1985
Inserisci la quantità:

Il prezzo attuale di ZXMS6005N8Q-13 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,89 USD~~; ~~0,89 USD~~

10: ~~0,74 USD~~; ~~7,44 USD~~

100: ~~0,48 USD~~; ~~48,00 USD~~

1000: ~~0,38 USD~~; ~~384,00 USD~~

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ZXMS6005 11
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ZXMS 44
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ZXMS6005N8Q-13

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes