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SIHW33N60E-GE3

SIHW33N60E-GE3
Mfr. #:
SIHW33N60E-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 600V Vds 30V Vgs TO-247AD
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHW33N60E-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHW33N60E-GE3 DatasheetSIHW33N60E-GE3 Datasheet (P4-P6)SIHW33N60E-GE3 Datasheet (P7-P8)
ECAD Model:
Maggiori informazioni:
SIHW33N60E-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-247AD-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
33 A
Rds On - Resistenza Drain-Source:
99 mOhms
Vgs th - Tensione di soglia gate-source:
4 V
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
100 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
278 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Serie:
E
Marca:
Vishay / Siliconix
Tempo di caduta:
54 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
60 ns
Quantità confezione di fabbrica:
480
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
99 ns
Tempo di ritardo di accensione tipico:
28 ns
Unità di peso:
1.340411 oz
Tags
SIHW3, SIHW, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 600V, 33A, TO-247AD-3; Transistor Polarity:N Channel; Continuous D
***ical
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-247AD
***
N-CH 600V TO-247
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHW33N60E-GE3
DISTI # 19270292		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		134
  • 19:$4.1077
SIHW33N60E-GE3
DISTI # SIHW33N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 33A TO-247AD
RoHS: Compliant
Min Qty: 1
Container: Tube		Temporarily Out of Stock
  • 2880:$3.3516
  • 960:$4.1832
  • 480:$4.6620
  • 25:$5.6700
  • 10:$5.9980
  • 1:$6.6800
SIHW33N60E-GE3
DISTI # SIHW33N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin TO-247AD - Tape and Reel (Alt: SIHW33N60E-GE3)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
    SIHW33N60E-GE3
    DISTI # 68W7077    		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 33A, TO-247AD-3,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes134
    • 1:$2.8300
    • 10:$2.8300
    • 25:$2.8300
    • 50:$2.8300
    • 100:$2.8300
    • 500:$2.8300
    • 1000:$2.8300
    • 2500:$2.8300
    SIHW33N60E-GE3
    DISTI # 78-SIHW33N60E-GE3    		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AD
    RoHS: Compliant    		480
    • 1:$6.7200
    • 10:$5.5600
    • 100:$4.5800
    • 250:$4.4400
    • 500:$3.9800
    • 1000:$3.3600
    • 2500:$3.1900
    SIHW33N60E-GE3Vishay Intertechnologies 394
      SIHW33N60E-GE3
      DISTI # 2311569      		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 33A, TO-247AD-3
      RoHS: Compliant      		145
      • 1:$5.5500
      SIHW33N60E-GE3
      DISTI # 2311569      		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 33A, TO-247AD-3
      RoHS: Compliant      		134
      • 100:£4.2000
      • 50:£4.5000
      • 25:£4.8000
      • 10:£5.0900
      • 1:£6.1500
      SIHW33N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AD
      RoHS: Compliant      		Americas -
        Immagine Parte # Descrizione
        SIHW33N60E-GE3

        Mfr.#: SIHW33N60E-GE3

        OMO.#: OMO-SIHW33N60E-GE3

        		 MOSFET 600V Vds 30V Vgs TO-247AD
        SIHW33N60E

        Mfr.#: SIHW33N60E

        OMO.#: OMO-SIHW33N60E-1190

        		 Nuovo e originale
        SIHW33N60E-GE3

        Mfr.#: SIHW33N60E-GE3

        OMO.#: OMO-SIHW33N60E-GE3-VISHAY

        		 MOSFET N-CH 600V 33A TO-247AD
        Disponibilità
        Azione:
        480
        Su ordine:
        2463
        Inserisci la quantità:
        Il prezzo attuale di SIHW33N60E-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        6,72 USD
        6,72 USD
        10
        5,56 USD
        55,60 USD
        100
        4,58 USD
        458,00 USD
        250
        4,44 USD
        1 110,00 USD
        500
        3,98 USD
        1 990,00 USD
        1000
        3,36 USD
        3 360,00 USD
        2500
        3,19 USD
        7 975,00 USD
        A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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