OMO ElectronicOMO Electronic
Expand menu
0 Carrello

SI7137DP-T1-GE3

SI7137DP-T1-GE3
Mfr. #:
SI7137DP-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET -20V Vds 12V Vgs PowerPAK SO-8
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI7137DP-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI7137DP-T1-GE3 DatasheetSI7137DP-T1-GE3 Datasheet (P4-P6)SI7137DP-T1-GE3 Datasheet (P7-P9)SI7137DP-T1-GE3 Datasheet (P10-P12)SI7137DP-T1-GE3 Datasheet (P13)
ECAD Model:
Maggiori informazioni:
SI7137DP-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
E
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerPAK-SO-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale P
Vds - Tensione di rottura Drain-Source:
20 V
Id - Corrente di scarico continua:
60 A
Rds On - Resistenza Drain-Source:
1.6 mOhms
Vgs th - Tensione di soglia gate-source:
1.4 V
Vgs - Tensione Gate-Source:
12 V
Qg - Carica cancello:
585 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
104 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
TrenchFET
Confezione:
Bobina
Serie:
SI7
Tipo di transistor:
1 P-Channel
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
95 S
Tempo di caduta:
72 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
14 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
230 ns
Tempo di ritardo di accensione tipico:
20 ns
Parte # Alias:
SI7137DP-GE3
Unità di peso:
0.017870 oz
Tags
SI7137DP-T1, SI7137DP-T, SI7137DP, SI7137D, SI7137, SI713, SI71, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    T***n
    T***n
    LK

    wow.. it amazing product. spark gap about 2cm..!i use to make this,1* 400kv boost module 1* 18650 baterry 1* 18650 usb charging circuit1* led and 220ohm resister.2* screw nuts2* switches 1* 25cm long pvc pipe and end caps works pritty well. not deathly, but it hurts. try you guys..!!

    2019-01-15
    A***v
    A***v
    RU

    The parcel was a national team. It came all that ordered. Went almost a week for this minus star. I will check in the case i will add a review, or even with these details that is still a lottery.

    2019-05-13
***ure Electronics
Single P-Channel 200 V 1.95 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
***ark
MOSFET Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.4V ;RoHS Compliant: Yes
***nell
MOSFET, P CH, -20V, -60A, POWERPAK SO; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
*** Source Electronics
Trans MOSFET N-CH 20V 60A 8-Pin PowerPAK SO T/R / MOSFET N-CH 20V 60A PPAK SO-8
***ure Electronics
Single N-Channel 20 V 0.00225 Ohm 97 nC 6.25 W Silicon SMT Mosfet POWERPAK-SO-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:45.6A; On Resistance Rds(On):0.0013Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V Rohs Compliant: Yes
***ure Electronics
20V, 50A, 2.3mohm, TrenchFET® power MOSFET, N-Channel, PowerPAK SO-8
***ical
Trans MOSFET N-CH 20V 35.4A 8-Pin PowerPAK SO EP T/R
***enic
20V 50A 2.3m´Î@10V15A 5.2W 1.5V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS
***ment14 APAC
MOSFET,N CH,DIODE,20V,50A,PPAKSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:20V; On Resistance Rds(on):1900µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:35.4A; Power Dissipation Pd:5.2W; Voltage Vgs Max:12V
***hard Electronics
VISHAY SIR401DP-T1-GE3 MOSFET Transistor, P Channel, 50 A, -20 V, 0.0025 ohm, -10 V, -600 mV
***roFlash
MOSFET, P-CH, 30V, PPAK-SO8; Transistor Polarity: P Channel; Continuous Drain Cur
***nell
MOSFET, P-CH, -20V, PPAK-SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***Yang
Transistor: N-MOSFET, unipolar, 20V, 50A, 0.009ohm, 44W, -55+175 deg.C, SMD, TO252(DPAK)
***emi
N-Channel PowerTrench® MOSFET, 20V, 50A, 9mΩ
***ure Electronics
N-Channel 20 V 8 mOhm Surface Mount PowerTrench Mosfet - DPAK (TO-252)
***r Electronics
Power Field-Effect Transistor, 14.7A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N CH, 20V, 50A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; P
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
***ure Electronics
Single N-Channel 20 V 3.5 mOhm 52 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
20V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS
***(Formerly Allied Electronics)
MOSFET, 20V, 40A, 2.5 MOHM, 2.5V DRIVE CAPABLE, PQFN3.3X3.3
***Yang
Trans MOSFET N-CH 20V 26A 8-Pin PQFN EP T/R - Tape and Reel
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 37 W
***ark
MOSFET,N CH,DIODE,20V,26A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; On State Resistance:0.002ohm; Rds(on) Test Voltage Vgs:4.5V; Voltage Vgs Max:12V; Operating Temperature Range:-55°C to +150°C; Transistor ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side
***emi
N-Channel PowerTrench® SyncFET™ MOSFET, 25V, 90A, 1.5mΩ
***ure Electronics
Single N-Channel 25 V 2.5 W 81 nC Silicon Surface Mount Mosfet - POWER 56-8
***r Electronics
Power Field-Effect Transistor, 38A I(D), 25V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel SyncFET™ is produced using Fairchild Semiconductor's advanced PowerTrench® process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Parte # Mfg. Descrizione Azione Prezzo
SI7137DP-T1-GE3
DISTI # V72:2272_09215622		Vishay IntertechnologiesTrans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R
RoHS: Compliant		1471
  • 1000:$1.1500
  • 500:$1.1905
  • 250:$1.3289
  • 100:$1.3320
  • 25:$1.6219
  • 10:$1.6276
  • 1:$1.8717
SI7137DP-T1-GE3
DISTI # SI7137DP-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 20V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		634In Stock
  • 1000:$1.2198
  • 500:$1.4722
  • 100:$1.8928
  • 10:$2.3560
  • 1:$2.6100
SI7137DP-T1-GE3
DISTI # SI7137DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 20V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		634In Stock
  • 1000:$1.2198
  • 500:$1.4722
  • 100:$1.8928
  • 10:$2.3560
  • 1:$2.6100
SI7137DP-T1-GE3
DISTI # SI7137DP-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 20V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$1.1026
SI7137DP-T1-GE3
DISTI # 27105003		Vishay IntertechnologiesTrans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R
RoHS: Compliant		1471
  • 1000:$1.1500
  • 500:$1.1905
  • 250:$1.3289
  • 100:$1.3320
  • 25:$1.6219
  • 10:$1.6276
  • 7:$1.8717
SI7137DP-T1-GE3
DISTI # SI7137DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7137DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$1.2900
  • 6000:$1.1900
  • 12000:$1.1900
  • 18000:$1.1900
  • 30000:$1.0900
SI7137DP-T1-GE3
DISTI # 63R6005		Vishay IntertechnologiesTrans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 63R6005)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$2.7700
  • 25:$2.3000
  • 50:$2.0500
  • 100:$1.7900
  • 250:$1.6800
  • 500:$1.5600
  • 1000:$1.5000
SI7137DP-T1-GE3Vishay IntertechnologiesSingle P-Channel 200 V 1.95 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
RoHS: Compliant		9000Reel
  • 3000:$1.6500
SI7137DP-T1-GE3
DISTI # 781-SI7137DP-GE3		Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs PowerPAK SO-8
RoHS: Compliant		28226
  • 1:$2.3100
  • 10:$1.9200
  • 100:$1.4900
  • 500:$1.3000
  • 1000:$1.2600
  • 3000:$1.2400
SI7137DP-T1-GE3
DISTI # 2335354		Vishay IntertechnologiesMOSFET, P CH, -20V, -60A, POWERPAK SO
RoHS: Compliant		5724
  • 1:£1.7700
  • 10:£1.4700
  • 100:£1.1500
  • 250:£1.0800
  • 500:£1.0100
SI7137DP-T1-GE3
DISTI # C1S804000723516		Vishay IntertechnologiesMOSFETs
RoHS: Compliant		1471
  • 250:$1.3258
  • 100:$1.3289
  • 25:$1.6162
  • 10:$1.6219
SI7137DP-T1-GE3
DISTI # 2335354		Vishay IntertechnologiesMOSFET, P CH, -20V, -60A, POWERPAK SO
RoHS: Compliant		4374
  • 1:$3.6600
  • 10:$3.0400
  • 100:$2.3700
  • 500:$2.0600
  • 1000:$1.9800
  • 3000:$1.9700
SI7137DP-T1-GE3
DISTI # XSFP00000063506		Vishay Siliconix 
RoHS: Compliant		10095
  • 3000:$3.3000
  • 10095:$3.0000
SI7137DP-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs PowerPAK SO-8
RoHS: Compliant		Americas - 9000
  • 3000:$0.9980
  • 6000:$0.9620
  • 12000:$0.9250
Immagine Parte # Descrizione
TPD4E02B04DQAR

Mfr.#: TPD4E02B04DQAR

OMO.#: OMO-TPD4E02B04DQAR

 TVS Diodes / ESD Suppressors TPD4E02B04 4-Ch ESD Protection Diode
RUF025N02FRATL

Mfr.#: RUF025N02FRATL

OMO.#: OMO-RUF025N02FRATL

 MOSFET Nch 20V Vds 2.5A 0.08Rds(on) 5Qg
SN74LVC1G08QDCKRQ1

Mfr.#: SN74LVC1G08QDCKRQ1

OMO.#: OMO-SN74LVC1G08QDCKRQ1

 Logic Gates Single 2-Input Positive-AND Gate
MIC5332-SSYMT-TR

Mfr.#: MIC5332-SSYMT-TR

OMO.#: OMO-MIC5332-SSYMT-TR

 LDO Voltage Regulators Dual 300mA micropower ULDO, with POR
UCZ1V101MCL1GS

Mfr.#: UCZ1V101MCL1GS

OMO.#: OMO-UCZ1V101MCL1GS

 Aluminum Electrolytic Capacitors - SMD 100uF 35V 20%
MIC5332-SSYMT-TR

Mfr.#: MIC5332-SSYMT-TR

OMO.#: OMO-MIC5332-SSYMT-TR-MICROCHIP-TECHNOLOGY

 IC REG LINEAR 3.3V/3.3V 8TMLF
TPD4E02B04DQAR

Mfr.#: TPD4E02B04DQAR

OMO.#: OMO-TPD4E02B04DQAR-TEXAS-INSTRUMENTS

 ESD Suppressor Diode Arrays 3.6V 10-Pin USON T/R
LMZM23601V5SILT

Mfr.#: LMZM23601V5SILT

OMO.#: OMO-LMZM23601V5SILT-TEXAS-INSTRUMENTS

 36V NANO MODULE
RUF025N02FRATL

Mfr.#: RUF025N02FRATL

OMO.#: OMO-RUF025N02FRATL-ROHM-SEMI

 NCH 20V 2.5A MIDDLE POWER MOSFET
SN74LVC1G08QDCKRQ1

Mfr.#: SN74LVC1G08QDCKRQ1

OMO.#: OMO-SN74LVC1G08QDCKRQ1-TEXAS-INSTRUMENTS

 Nuovo e originale
Disponibilità
Azione:
34
Su ordine:
2017
Inserisci la quantità:
Il prezzo attuale di SI7137DP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,30 USD
2,30 USD
10
1,91 USD
19,10 USD
100
1,48 USD
148,00 USD
500
1,29 USD
645,00 USD
1000
1,07 USD
1 070,00 USD
Iniziare con
Prodotti più recenti
More Newest Products
Top