SIS932EDN-T1-GE3

Mfr. #:: SIS932EDN-T1-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SIS932EDN-T1-GE3 Scheda dati
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HTML Datasheet:: SIS932EDN-T1-GE3 Datasheet SIS932EDN-T1-GE3 Datasheet (P4-P6)SIS932EDN-T1-GE3 Datasheet (P7)
ECAD Model:
Maggiori informazioni:: SIS932EDN-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: PowerPAK-1212-8

Numero di canali:: 2 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 30 V

Id - Corrente di scarico continua:: 6 A

Rds On - Resistenza Drain-Source:: 22 mOhms

Vgs th - Tensione di soglia gate-source:: 1.4 V

Vgs - Tensione Gate-Source:: 12 V

Qg - Carica cancello:: 9.2 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 23 W

Configurazione:: Dual

Modalità canale:: Aumento

Nome depositato:: TrenchFET, PowerPAK

Confezione:: Bobina

Serie:: SIS

Tipo di transistor:: 2 N-Channel

Marca:: Vishay / Siliconix

Transconduttanza diretta - Min:: 45 S

Tempo di caduta:: 5 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 35 ns

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 32 ns

Tempo di ritardo di accensione tipico:: 15 ns

Tags: SIS9, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS932EDN-T1-GE3 Descrizione

***et: TrenchFET Power MOSFET N-Channel Dual 30V VDS ±12V VGS 6A ID 8-Pin PowerPAK 1212 T/R

***ical: Trans MOSFET N-CH 30V 6A 8-Pin PowerPAK 1212 EP T/R

***i-Key: MOSFET N-CH DL 30V PWRPAK 1212-8

***ark: Mosfet, Dual N-Ch, 60V, Powerpak 1212; Transistor Polarity:dual N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.018Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.4V; Powerrohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, DUAL N-CH, 60V, POWERPAK 1212; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.4V; Power Dissipation Pd:23W; Transistor Case Style:PowerPAK 1212; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

***nell: MOSFET, DOPPIO CA-N 60V POWERPAK 1212; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.018ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:1.4V; Dissipazione di Potenza Pd:23W; Modello Case Transistor:PowerPAK 1212; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)

SIS932EDN-T1-GE3 Maggiori informazioni

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SIS932EDN-T1-GE3 DISTI # V72:2272_21388856	Vishay Intertechnologies	SIS932EDN-T1-GE3	6000	75000:$0.1920 30000:$0.1962 15000:$0.2005 6000:$0.2047 3000:$0.2186 1000:$0.2300 500:$0.2995 250:$0.3638 100:$0.3773 50:$0.4835 25:$0.5020 10:$0.5558 1:$0.7252
SIS932EDN-T1-GE3 DISTI # V99:2348_21388856	Vishay Intertechnologies	SIS932EDN-T1-GE3	0	6000000:$0.2078 3000000:$0.2080 600000:$0.2163 60000:$0.2288 6000:$0.2308
SIS932EDN-T1-GE3 DISTI # SIS932EDN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH DL 30V PWRPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9005In Stock	1000:$0.2607 500:$0.3374 100:$0.4294 10:$0.5750 1:$0.6700
SIS932EDN-T1-GE3 DISTI # SIS932EDN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH DL 30V PWRPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9005In Stock	1000:$0.2607 500:$0.3374 100:$0.4294 10:$0.5750 1:$0.6700
SIS932EDN-T1-GE3 DISTI # SIS932EDN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH DL 30V PWRPAK 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	30000:$0.1906 15000:$0.2010 6000:$0.2159 3000:$0.2308
SIS932EDN-T1-GE3 DISTI # 33136743	Vishay Intertechnologies	SIS932EDN-T1-GE3	6000	30000:$0.1962 15000:$0.2005 6000:$0.2047 3000:$0.2186 1000:$0.2300 500:$0.2995 250:$0.3638 100:$0.3773 50:$0.4835 32:$0.5020
SIS932EDN-T1-GE3 DISTI # SIS932EDN-T1-GE3	Vishay Intertechnologies	TrenchFET Power MOSFET N-Channel Dual 30V VDS ±12V VGS 6A ID8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS932EDN-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.1809 30000:$0.1859 18000:$0.1919 12000:$0.1999 6000:$0.2059
SIS932EDN-T1-GE3 DISTI # 59AC7464	Vishay Intertechnologies	DUAL N-CHANNEL 30-V (D-S) MOSFET	0	50000:$0.1830 30000:$0.1920 20000:$0.2060 10000:$0.2200 5000:$0.2390 1:$0.2440
SIS932EDN-T1-GE3 DISTI # 78-SIS932EDN-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 12V Vgs PowerPAK 1212-8 RoHS: Compliant	8937	1:$0.6700 10:$0.5110 100:$0.3800 500:$0.3110 1000:$0.2410 3000:$0.2190 6000:$0.2050 9000:$0.1910 24000:$0.1810
SIS932EDN-T1-GE3 DISTI # 2846633	Vishay Intertechnologies	MOSFET, DUAL N-CH, 60V, POWERPAK 1212	6000	500:£0.2380 250:£0.2650 100:£0.2910 10:£0.4340 1:£0.5940
SIS932EDN-T1-GE3 DISTI # 2846633	Vishay Intertechnologies	MOSFET, DUAL N-CH, 60V, POWERPAK 1212 RoHS: Compliant	6000	1000:$0.3930 500:$0.5090 100:$0.6480 5:$0.8670

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Disponibilità

Azione:: Available
Su ordine:: 1991
Inserisci la quantità:

Il prezzo attuale di SIS932EDN-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,67 USD~~; ~~0,67 USD~~

10: ~~0,51 USD~~; ~~5,11 USD~~

100: ~~0,38 USD~~; ~~38,00 USD~~

500: ~~0,31 USD~~; ~~155,50 USD~~

1000: ~~0,24 USD~~; ~~241,00 USD~~

Iniziare con

SIS9 131
SIS 843

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SIS932EDN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes