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IPW65R065C7XKSA1

IPW65R065C7XKSA1
Mfr. #:
IPW65R065C7XKSA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET HIGH POWER_NEW
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPW65R065C7XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPW65R065C7XKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-247-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
650 V
Id - Corrente di scarico continua:
33 A
Rds On - Resistenza Drain-Source:
58 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
64 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
171 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Tubo
Altezza:
21.1 mm
Lunghezza:
16.13 mm
Serie:
CoolMOS C7
Tipo di transistor:
1 N-Channel
Larghezza:
5.21 mm
Marca:
Tecnologie Infineon
Tempo di caduta:
7 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
14 ns
Quantità confezione di fabbrica:
240
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
72 ns
Tempo di ritardo di accensione tipico:
17 ns
Parte # Alias:
IPW65R065C7 SP001080116
Unità di peso:
1.340411 oz
Tags
IPW65R0, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-Channel 650V 33A 3-Pin TO-247 Tube
***ark
Mosfet, N-Ch, 650V, 33A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.058Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descrizione Azione Prezzo
IPW65R065C7XKSA1
DISTI # V99:2348_06378673		Infineon Technologies AGTrans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-247 Tube178
  • 720:$5.0599
  • 240:$5.8710
  • 25:$6.8420
  • 10:$7.1780
  • 1:$8.7186
IPW65R065C7XKSA1
DISTI # V36:1790_06378673		Infineon Technologies AGTrans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-247 Tube0
  • 240000:$3.9060
  • 120000:$3.9120
  • 24000:$4.7440
  • 2400:$6.5080
  • 240:$6.8200
IPW65R065C7XKSA1
DISTI # IPW65R065C7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V TO-247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		365In Stock
  • 720:$5.4578
  • 240:$6.2677
  • 25:$7.2184
  • 10:$7.5710
  • 1:$8.3800
IPW65R065C7XKSA1
DISTI # 33655403		Infineon Technologies AGTrans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-247 Tube240
  • 240:$4.2002
IPW65R065C7XKSA1
DISTI # 32031069		Infineon Technologies AGTrans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-247 Tube178
  • 2:$8.7186
IPW65R065C7XKSA1
DISTI # SP001080116		Infineon Technologies AGTrans MOSFET N-CH 700V 33A 3-Pin TO-247 Tube (Alt: SP001080116)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 480
  • 1000:€3.6900
  • 500:€3.8900
  • 100:€4.0900
  • 50:€4.1900
  • 25:€4.3900
  • 10:€4.5900
  • 1:€4.9900
IPW65R065C7XKSA1
DISTI # IPW65R065C7XKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 33A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R065C7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$4.1900
  • 1440:$4.2900
  • 960:$4.3900
  • 480:$4.5900
  • 240:$4.7900
IPW65R065C7XKSA1
DISTI # 34AC1735		Infineon Technologies AGMOSFET, N-CH, 650V, 33A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.058ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes84
  • 500:$5.2400
  • 250:$5.7600
  • 100:$6.0300
  • 50:$6.4800
  • 25:$6.9400
  • 10:$7.2800
  • 1:$8.0500
IPW65R065C7
DISTI # 726-IPW65R065C7		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		337
  • 1:$7.9700
  • 10:$7.2100
  • 25:$6.8700
  • 100:$5.9700
  • 250:$5.7000
  • 500:$5.1900
IPW65R065C7XKSA1
DISTI # 726-IPW65R065C7XKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		215
  • 1:$7.9700
  • 10:$7.2100
  • 25:$6.8700
  • 100:$5.9700
  • 250:$5.7000
  • 500:$5.1900
IPW65R065C7XKSA1
DISTI # IPW65R065C7		Infineon Technologies AGN-Ch 650V 33A 171W 0,065R TO247
RoHS: Compliant		227
  • 1:€8.3500
  • 10:€5.3500
  • 50:€3.8500
  • 100:€3.6900
IPW65R065C7XKSA1
DISTI # 2781194		Infineon Technologies AGMOSFET, N-CH, 650V, 33A, TO-247-3327
  • 100:£4.6000
  • 50:£4.9500
  • 10:£5.2900
  • 5:£6.1400
  • 1:£6.6900
IPW65R065C7XKSA1
DISTI # 2781194		Infineon Technologies AGMOSFET, N-CH, 650V, 33A, TO-247-3
RoHS: Compliant		84
  • 250:$6.7100
  • 100:$6.8500
  • 50:$7.2200
  • 10:$7.6400
  • 5:$8.6400
  • 1:$9.2300
Immagine Parte # Descrizione
UCC24624DT

Mfr.#: UCC24624DT

OMO.#: OMO-UCC24624DT

 Gate Drivers UCC24624D
UCC21520QDWQ1

Mfr.#: UCC21520QDWQ1

OMO.#: OMO-UCC21520QDWQ1

 Gate Drivers 4A/6A 5KVRMS DUAL ISOLATED-CHANNEL UNIV
SN6505BDBVR

Mfr.#: SN6505BDBVR

OMO.#: OMO-SN6505BDBVR

 Power Management Specialized - PMIC Transformer driver for isolated power
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR

 MOSFET 650V 30A E-Mode GaN
FFSH20120ADN-F155

Mfr.#: FFSH20120ADN-F155

OMO.#: OMO-FFSH20120ADN-F155

 Schottky Diodes & Rectifiers 1200V SiC SBD 20A
22201C106MAT2A

Mfr.#: 22201C106MAT2A

OMO.#: OMO-22201C106MAT2A

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 10uF X7R 2220 20% Tol HIGH CV
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR-1190

 MOSFET 650V 30A E-Mode GaN
CGA6M3X7S2A475K200AB

Mfr.#: CGA6M3X7S2A475K200AB

OMO.#: OMO-CGA6M3X7S2A475K200AB-TDK

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 4.7uF 100volts X7S +/-10%
22201C106MAT2A

Mfr.#: 22201C106MAT2A

OMO.#: OMO-22201C106MAT2A-AVX

 Cap Ceramic 10uF 100V X7R 20% Pad SMD 2220 125C T/R
CCG302415D

Mfr.#: CCG302415D

OMO.#: OMO-CCG302415D-TDK-LAMBDA

 DC-DC CONVERTER, 2 O/P, 30W
Disponibilità
Azione:
209
Su ordine:
2192
Inserisci la quantità:
Il prezzo attuale di IPW65R065C7XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
7,97 USD
7,97 USD
10
7,21 USD
72,10 USD
25
6,87 USD
171,75 USD
100
5,97 USD
597,00 USD
250
5,70 USD
1 425,00 USD
500
5,19 USD
2 595,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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