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SIHB12N60E-GE3

SIHB12N60E-GE3
Mfr. #:
SIHB12N60E-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHB12N60E-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB12N60E-GE3 DatasheetSIHB12N60E-GE3 Datasheet (P4-P6)SIHB12N60E-GE3 Datasheet (P7-P9)
ECAD Model:
Maggiori informazioni:
SIHB12N60E-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-263-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
650 V
Id - Corrente di scarico continua:
12 A
Rds On - Resistenza Drain-Source:
380 mOhms
Vgs th - Tensione di soglia gate-source:
4 V
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
29 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
147 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Serie:
E
Marca:
Vishay / Siliconix
Tempo di caduta:
19 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
19 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
35 ns
Tempo di ritardo di accensione tipico:
14 ns
Unità di peso:
0.050717 oz
Tags
SIHB12N60, SIHB12N6, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**y
    E**y
    TR

    Tanks

    2019-01-22
    A***v
    A***v
    RU

    Everything has come safe and sound

    2019-01-22
***et
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK
***ure Electronics
MOSFET 600V 380MOHM@10V 12A N-CH E-SRS
***ment14 APAC
MOSFET, N CH, 600V, 12A, TO-263-3
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHB12N60E-GE3
DISTI # V36:1790_09219014		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK0
  • 1000000:$0.9136
  • 500000:$0.9150
  • 100000:$0.9941
  • 10000:$1.1110
  • 1000:$1.1300
SIHB12N60E-GE3
DISTI # V99:2348_09219014		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK0
  • 1000000:$0.9821
  • 500000:$0.9833
  • 100000:$1.0390
  • 10000:$1.1180
  • 1000:$1.1300
SIHB12N60E-GE3
DISTI # SIHB12N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 12A TO263
Min Qty: 1
Container: Bulk		146In Stock
  • 5000:$0.8911
  • 2500:$0.9045
  • 1000:$0.9715
  • 500:$1.1725
  • 100:$1.4271
  • 10:$1.7760
  • 1:$1.9800
SIHB12N60E-GE3
DISTI # SIHB12N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: SIHB12N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.8590
  • 6000:$0.8827
  • 4000:$0.9079
  • 2000:$0.9463
  • 1000:$0.9753
SIHB12N60E-GE3
DISTI # 68W7031		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK - Product that comes on tape, but is not reeled (Alt: 68W7031)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$1.1800
SIHB12N60E-GE3
DISTI # 68W7031		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 12A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes
RoHS: Compliant		322
  • 100:$1.0300
  • 250:$1.0300
  • 500:$1.0300
  • 25:$1.1200
  • 50:$1.1200
  • 1:$1.2200
  • 10:$1.2200
SIHB12N60E-GE3
DISTI # 68W7032		Vishay IntertechnologiesMOSFET, N CH, 600V, 12A, TO-263-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes
RoHS: Compliant		0
  • 10000:$0.8380
  • 6000:$0.8710
  • 4000:$0.9050
  • 2000:$1.0100
  • 1000:$1.0600
  • 1:$1.1300
SIHB12N60E-GE3
DISTI # 78-SIHB12N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		840
  • 1:$1.9800
  • 10:$1.7400
  • 100:$1.3700
  • 500:$1.1700
  • 1000:$0.9710
  • 2000:$0.9040
  • 5000:$0.8910
SIHB12N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
    SIHB12N60E-GE3
    DISTI # 1451818    		Vishay IntertechnologiesIn a Tube of 50, SIHB12N60E-GE3 N-Channel MOSFET, 12 A, 600 V E Series, 3-Pin D2PAK Vishay, TU
    Min Qty: 50
    Container: Tube    		0
    • 50:$0.6980
    SIHB12N60E-GE3
    DISTI # 7689300    		Vishay IntertechnologiesSIHB12N60E-GE3 N-Channel MOSFET, 12 A, 600 V E Series, 3-Pin D2PAK Vishay, EA
    Min Qty: 1
    Container: Bulk    		671
    • 1:$0.7150
    SIHB12N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		Europe - 900
      SIHB12N60E-GE3
      DISTI # 2364071      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-263
      RoHS: Compliant      		1165
      • 5000:£0.7190
      • 1000:£0.7450
      • 500:£0.9630
      • 250:£1.0300
      • 100:£1.1000
      • 10:£1.4300
      • 1:£1.9500
      SIHB12N60E-GE3
      DISTI # 2364071      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-263
      RoHS: Compliant      		1160
      • 5000:$1.3700
      • 2500:$1.4300
      • 1000:$1.5300
      • 500:$1.8500
      • 100:$2.2500
      • 10:$2.7900
      • 1:$3.1100
      Immagine Parte # Descrizione
      M24256-BWMN6TP

      Mfr.#: M24256-BWMN6TP

      OMO.#: OMO-M24256-BWMN6TP

      		 EEPROM 256K (32Kx8)
      BAV99LT3G

      Mfr.#: BAV99LT3G

      OMO.#: OMO-BAV99LT3G

      		 Diodes - General Purpose, Power, Switching 70V 215mA Dual
      LMR14206XMK/NOPB

      Mfr.#: LMR14206XMK/NOPB

      OMO.#: OMO-LMR14206XMK-NOPB

      		 Switching Voltage Regulators SIMPLE SWITCHER 42 Vin,0.6A SD Vltg Reg
      B82793S0513N201

      Mfr.#: B82793S0513N201

      OMO.#: OMO-B82793S0513N201-EPCOS

      		 Common Mode Filters / Chokes 51uH 800mA 30% 7.1x6mm SMD
      LMR14206XMK/NOPB

      Mfr.#: LMR14206XMK/NOPB

      OMO.#: OMO-LMR14206XMK-NOPB-TEXAS-INSTRUMENTS

      		 Voltage Regulators - Switching Regulators SIMPLE SWITCHER 42 Vin,0.6A SD Vltg Reg
      BAV99LT3G

      Mfr.#: BAV99LT3G

      OMO.#: OMO-BAV99LT3G-ON-SEMICONDUCTOR

      		 Diodes - General Purpose, Power, Switching 70V 215mA Dual
      12065C334KAT2A

      Mfr.#: 12065C334KAT2A

      OMO.#: OMO-12065C334KAT2A-AVX

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 0.33uF 50volts X7R 10%
      M24256-BWMN6TP

      Mfr.#: M24256-BWMN6TP

      OMO.#: OMO-M24256-BWMN6TP-STMICROELECTRONICS

      		 IC EEPROM 256K I2C 1MHZ 8SO
      Disponibilità
      Azione:
      500
      Su ordine:
      2483
      Inserisci la quantità:
      Il prezzo attuale di SIHB12N60E-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      2,08 USD
      2,08 USD
      10
      1,72 USD
      17,20 USD
      100
      1,34 USD
      134,00 USD
      500
      1,17 USD
      585,00 USD
      1000
      0,97 USD
      971,00 USD
      2000
      0,90 USD
      1 808,00 USD
      5000
      0,87 USD
      4 355,00 USD
      10000
      0,84 USD
      8 370,00 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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