SI4501BDY-T1-GE3

Mfr. #:: SI4501BDY-T1-GE3
Produttore:: Vishay
Descrizione:: MOSFET N/P-CH 30V/8V 8SOIC
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI4501BDY-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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Attributo del prodotto
Valore attributo

Produttore: Vishay Siliconix

categoria di prodotto: FET - Array

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SI4501BDY-GE3

Unità di peso: 0.019048 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: 8-SOIC (0.154", 3.90mm Width)

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 2 Channel

Pacchetto-dispositivo-fornitore: 8-SOIC

Configurazione: Canale N Canale P

Tipo FET: Canale N e P, scarico comune

Potenza-Max: 4.5W, 3.1W

Tipo a transistor: 1 N-Channel 1 P-Channel

Drain-to-Source-Voltage-Vdss: 30V, 8V

Ingresso-Capacità-Ciss-Vds: 805pF @ 15V

Funzione FET: Porta livello logico

Corrente-Continuo-Scarico-Id-25°C: 12A, 8A

Rds-On-Max-Id-Vgs: 17 mOhm @ 10A, 10V

Vgs-th-Max-Id: 2V @ 250μA

Gate-Carica-Qg-Vgs: 25nC @ 10V

Pd-Power-Dissipazione: 4.5 W

Tempo di caduta: 8 ns 9 ns

Ora di alzarsi: 11 ns 12 ns

Vgs-Gate-Source-Voltage: 20 V 8 V

Id-Continuo-Scarico-Corrente: 12 A

Vds-Drain-Source-Breakdown-Voltage: 30 V - 8 V

Rds-On-Drain-Source-Resistenza: 13.5 mOhms 21 mOhms

Polarità del transistor: Canale N Canale P

Tempo di ritardo allo spegnimento tipico: 15 ns 35 ns

Tempo di ritardo all'accensione tipico: 7 ns 6 ns

Qg-Gate-Carica: 16.5 nC 27.5 nC

Transconduttanza diretta-Min: 29 S 24 S

Tags: SI4501B, SI4501, SI450, SI45, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI4501BDY-T1-GE3 DISTI # V72:2272_09216524	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R RoHS: Compliant	2262	1000:$0.2460 500:$0.2753 250:$0.3234 100:$0.3345 25:$0.4116 10:$0.4133 1:$0.4862
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 30V/8V 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1756In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 30V/8V 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1756In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 30V/8V 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.2552
SI4501BDY-T1-GE3 DISTI # 30697489	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R RoHS: Compliant	2262	1000:$0.2460 500:$0.2753 250:$0.3234 100:$0.3345 29:$0.4116
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V/8V 12A/8A 8-Pin SO T/R (Alt: SI4501BDY-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€0.4119 10:€0.2809 25:€0.2419 50:€0.2229 100:€0.2149 500:€0.2109 1000:€0.2079
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V/8V 12A/8A 8-Pin SO T/R - Tape and Reel (Alt: SI4501BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2319 5000:$0.2249 10000:$0.2159 15000:$0.2099 25000:$0.2049
SI4501BDY-T1-GE3 DISTI # 67X6866	Vishay Intertechnologies	MOSFET Transistor, N and P Channel, 12 A, 30 V, 0.0135 ohm, 10 V, 800 mV	0	1:$0.2760 2500:$0.2630 5000:$0.2450 7500:$0.2280
SI4501BDY-T1-GE3 DISTI # 70616179	Vishay Siliconix	SI4501BDY-T1-GE3 Dual N/P-channel MOSFET Transistor,6.4 A,12 A,8V,30V,8-Pin SOIC RoHS: Compliant	0	100:$0.4700 500:$0.4200 1500:$0.3700 2500:$0.3400
SI4501BDY-T1-GE3 DISTI # 78-SI4501BDY-T1-GE3	Vishay Intertechnologies	MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR RoHS: Compliant	1545	1:$0.6400 10:$0.5110 100:$0.3880 500:$0.3200 1000:$0.2680 2500:$0.2670
SI4501BDY-T1-GE3 DISTI # 8123227P	Vishay Intertechnologies	TRANS MOSFET N/P-CH 30V/8V 9A/6.4A, RL	1680	100:£0.3060 500:£0.2520 1500:£0.2140 2500:£0.2090
SI4501BDY-T1-GE3	Vishay Intertechnologies	MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR	Americas -
SI4501BDY-T1-GE3 DISTI # C1S803605378402	Vishay Intertechnologies	MOSFETs	2262	250:$0.3234 100:$0.3345 25:$0.4116 10:$0.4134
SI4501BDY-T1-GE3 DISTI # 2056722	Vishay Intertechnologies	MOSFET, NP CH, W/D, 30V/8V, SO8 RoHS: Compliant	0	5:£0.4470 25:£0.3870 100:£0.3270 250:£0.2980 500:£0.2690

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI4501BDY-T1-GE3 OMO.#: OMO-SI4501BDY-T1-GE3	MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR
	Mfr.#: SI4501BDY OMO.#: OMO-SI4501BDY-1190	Nuovo e originale
	Mfr.#: SI4501BDY-T1-E3 OMO.#: OMO-SI4501BDY-T1-E3-1190	Nuovo e originale
	Mfr.#: SI4501BDY-T1-GE3 OMO.#: OMO-SI4501BDY-T1-GE3-VISHAY	MOSFET N/P-CH 30V/8V 8SOIC

Disponibilità

Azione:: Available
Su ordine:: 2000
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Il prezzo attuale di SI4501BDY-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,31 USD~~; ~~0,31 USD~~

10: ~~0,29 USD~~; ~~2,92 USD~~

100: ~~0,28 USD~~; ~~27,66 USD~~

500: ~~0,26 USD~~; ~~130,60 USD~~

1000: ~~0,25 USD~~; ~~245,90 USD~~

Iniziare con

SI4501B 3
SI4501 18
SI450 32
SI45 151
SI4 2994

SI4501BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes