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SIHB12N65E-GE3

SIHB12N65E-GE3
Mfr. #:
SIHB12N65E-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHB12N65E-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB12N65E-GE3 Datasheet
ECAD Model:
Maggiori informazioni:
SIHB12N65E-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220FP-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
700 V
Id - Corrente di scarico continua:
12 A
Rds On - Resistenza Drain-Source:
380 mOhms
Vgs th - Tensione di soglia gate-source:
4 V
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
35 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
156 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Massa
Serie:
E
Marca:
Vishay / Siliconix
Tempo di caduta:
18 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
19 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
35 ns
Tempo di ritardo di accensione tipico:
16 ns
Unità di peso:
0.050717 oz
Tags
SIHB12N6, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N-Channel 650 V 380 mO 35 nC Surface Mount Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 650V 12A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N CH, 650V, 12A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.33ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Powe
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHB12N65E-GE3
DISTI # V36:1790_09219044		Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		0
  • 1000000:$1.2910
  • 500000:$1.2950
  • 100000:$1.7320
  • 10000:$2.5750
  • 1000:$2.7200
SIHB12N65E-GE3
DISTI # SIHB12N65E-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 12A D2PAK
Min Qty: 1
Container: Tube		3000In Stock
  • 5000:$1.2594
  • 2500:$1.2783
  • 1000:$1.3730
  • 500:$1.6571
  • 100:$2.0169
  • 10:$2.5090
  • 1:$2.7900
SIHB12N65E-GE3
DISTI # SIHB12N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin D2PAK - Tape and Reel (Alt: SIHB12N65E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 4000:$1.1900
  • 6000:$1.1900
  • 10000:$1.1900
  • 1000:$1.2900
  • 2000:$1.2900
SIHB12N65E-GE3
DISTI # SIHB12N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin D2PAK (Alt: SIHB12N65E-GE3)
Min Qty: 1		Europe - 0
    SIHB12N65E-GE3
    DISTI # 99W9446    		Vishay IntertechnologiesN-CHANNEL 650V
    RoHS: Not Compliant    		0
    • 1000:$1.6300
    • 500:$1.7400
    • 250:$1.8700
    • 100:$2.0400
    • 1:$2.4900
    SIHB12N65E-GE3
    DISTI # 78-SIHB12N65E-GE3    		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		2000
    • 1:$2.7900
    • 10:$2.3600
    • 100:$1.9400
    • 500:$1.8100
    • 1000:$1.3700
    • 2000:$1.2700
    • 5000:$1.2500
    SIHB12N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		Americas -
      SIHB12N65E-GE3
      DISTI # 2400357      		Vishay IntertechnologiesMOSFET, N CH, 650V, 12A, TO-263-3
      RoHS: Compliant      		289
      • 5000:$1.9400
      • 3000:$2.0100
      • 1000:$2.1600
      • 100:$3.1700
      • 25:$3.7200
      • 10:$3.9500
      • 1:$4.3800
      SIHB12N65E-GE3
      DISTI # 2400357      		Vishay IntertechnologiesMOSFET, N CH, 650V, 12A, TO-263-3
      RoHS: Compliant      		289
      • 1000:£1.0400
      • 500:£1.3500
      • 250:£1.4400
      • 100:£1.5400
      • 10:£1.9900
      • 1:£2.7200
      Immagine Parte # Descrizione
      SMBJ5360B-TP

      Mfr.#: SMBJ5360B-TP

      OMO.#: OMO-SMBJ5360B-TP

      		 Zener Diodes 5W 25V
      SMBJ5360B-TP

      Mfr.#: SMBJ5360B-TP

      OMO.#: OMO-SMBJ5360B-TP-MICRO-COMMERCIAL-COMPONENTS

      		 Zener Diodes 5W 25V
      AGN210S4H

      Mfr.#: AGN210S4H

      OMO.#: OMO-AGN210S4H-PANASONIC

      		 Low Signal Relays - PCB 2 Form C 1 Form A 30VDC SMD 4.5V
      74477010

      Mfr.#: 74477010

      OMO.#: OMO-74477010-WURTH-ELECTRONICS

      		 FIXED IND 10UH 6.2A 22 MOHM SMD
      SMM02040C8253FB300

      Mfr.#: SMM02040C8253FB300

      OMO.#: OMO-SMM02040C8253FB300-VISHAY

      		 MELF Resistors 1/4watt 825Kohms 1% 50ppm
      Disponibilità
      Azione:
      Available
      Su ordine:
      1985
      Inserisci la quantità:
      Il prezzo attuale di SIHB12N65E-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      2,94 USD
      2,94 USD
      10
      2,44 USD
      24,40 USD
      100
      1,89 USD
      189,00 USD
      500
      1,65 USD
      825,00 USD
      1000
      1,37 USD
      1 370,00 USD
      2000
      1,27 USD
      2 540,00 USD
      5000
      1,23 USD
      6 150,00 USD
      10000
      1,18 USD
      11 800,00 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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