FCP22N60N

FCP22N60N
Mfr. #:
FCP22N60N
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 600V N-Channel SupreMOS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FCP22N60N Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FCP22N60N maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
22 A
Rds On - Resistenza Drain-Source:
140 mOhms
Vgs - Tensione Gate-Source:
30 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
205 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
SupreMOS
Confezione:
Tubo
Altezza:
16.3 mm
Lunghezza:
10.67 mm
Serie:
FCP22N60N
Tipo di transistor:
1 N-Channel
Tipo:
SupreMOS
Larghezza:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
22 S
Tempo di caduta:
4 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
16.7 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
49 ns
Tempo di ritardo di accensione tipico:
16.9 ns
Unità di peso:
0.063493 oz
Tags
FCP22N60N, FCP22N, FCP22, FCP2, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 22 A, 165 mΩ, TO-220
***p One Stop Japan
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220AB Tube
***i-Key
MOSFET N-CH 600V 22A TO-220
***trelec
MOSFET Operating temperature: -55...+150 °C Drive: logic level Housing type: TO-220 Polarity: N Variants: Enhancement mode Power dissipation: 205 W
***ter Electronics
600V N-CHANNEL MOSFET, SUPREMOS
***inecomponents.com
SupreMOS, 22A in TO220
***ment14 APAC
Prices include import duty and tax.
***ure Electronics
SUPREMOS, 22A IN TO220
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.64W ;RoHS Compliant: Yes
***nell
MOSFET,N CH,600V,22A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:205W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
FCP22N60N/FCPF22N60N/FCA22N60N SupreMOS® MOSFET
On Semiconductor FCP22N60N / FCPF22N60N / FCA22N60N SupreMOS® N-Channel MOSFETs are the next generation high voltage super-junction MOSFETs. These SupreMOS MOSFETs utilize advanced technology and precise process control to provide world-class Rsp on-resistance, superior switching performance, and ruggedness. Thes SupreMOS MOSFETs fit the industry's AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
Parte # Mfg. Descrizione Azione Prezzo
FCP22N60N_F102
DISTI # 26648090
ON SemiconductorN-Channel MOSFET 600V, 22A, 0.165 ohm1600
  • 800:$3.1960
FCP22N60N
DISTI # FCP22N60N-ND
ON SemiconductorMOSFET N-CH 600V 22A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube
939In Stock
  • 3000:$2.1778
  • 1000:$2.2925
  • 100:$3.1931
  • 25:$3.6844
  • 10:$3.8970
  • 1:$4.3400
FCP22N60N-F102
DISTI # FCP22N60N-F102-ND
ON SemiconductorMOSFET N-CH 600V 22A TO220-3
RoHS: Compliant
Min Qty: 800
Container: Tube
Temporarily Out of Stock
  • 800:$3.1956
FCP22N60N
DISTI # V36:1790_06359787
ON Semiconductor600V N-CHANNEL MOSFET, SUPREMO0
  • 1000000:$1.8900
  • 500000:$1.8930
  • 100000:$2.2410
  • 10000:$2.8900
  • 1000:$3.0000
FCP22N60N_F102
DISTI # V36:1790_16116294
ON SemiconductorN-Channel MOSFET 600V, 22A, 0.165 ohm0
  • 800000:$1.9320
  • 400000:$1.9360
  • 80000:$2.3270
  • 8000:$3.0690
  • 800:$3.1960
FCP22N60N
DISTI # FCP22N60N
ON SemiconductorTrans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FCP22N60N)
RoHS: Not Compliant
Min Qty: 136
Container: Bulk
Americas - 0
  • 1360:$2.1900
  • 408:$2.2900
  • 680:$2.2900
  • 136:$2.3900
  • 272:$2.3900
FCP22N60N
DISTI # FCP22N60N
ON SemiconductorTrans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220AB Rail (Alt: FCP22N60N)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€1.7900
  • 500:€1.8900
  • 50:€1.9900
  • 100:€1.9900
  • 25:€2.0900
  • 10:€2.1900
  • 1:€2.3900
FCP22N60N
DISTI # FCP22N60N
ON SemiconductorTrans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FCP22N60N)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 4000:$1.8900
  • 6000:$1.8900
  • 10000:$1.8900
  • 1000:$1.9900
  • 2000:$1.9900
FCP22N60N
DISTI # 64R2988
ON SemiconductorTrans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: 64R2988)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
  • 500:$3.5500
  • 250:$3.9400
  • 100:$4.1400
  • 50:$4.3500
  • 25:$4.5500
  • 10:$4.7600
  • 1:$5.5800
FCP22N60N-F102
DISTI # FCP22N60N-F102
ON SemiconductorN-Channel SupreMOS MOSFET 600V 22A 165mOhm 3-Pin TO-220 Tube - Rail/Tube (Alt: FCP22N60N-F102)
RoHS: Compliant
Min Qty: 800
Container: Tube
Americas - 0
  • 8000:$1.8900
  • 800:$1.9900
  • 1600:$1.9900
  • 3200:$1.9900
  • 4800:$1.9900
FCP22N60N
DISTI # 64R2988
ON SemiconductorMOSFET Transistor,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.14ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:1.64W RoHS Compliant: Yes0
  • 500:$2.8600
  • 250:$3.1800
  • 100:$3.3400
  • 50:$3.5100
  • 25:$3.6700
  • 10:$3.8400
  • 1:$4.5000
FCP22N60N-F102
DISTI # 48AC0860
ON SemiconductorSM 600V 165MOHM F TO220 / TUBE0
  • 500:$2.5500
  • 250:$2.6300
  • 100:$3.1300
  • 50:$3.6200
  • 25:$3.8600
  • 10:$4.4100
  • 1:$5.0900
FCP22N60N
DISTI # 512-FCP22N60N
ON SemiconductorMOSFET 600V N-Channel SupreMOS
RoHS: Compliant
105
  • 1:$4.1200
  • 10:$3.5000
  • 100:$3.0400
  • 250:$2.8800
  • 500:$2.5800
  • 1000:$2.2300
FCP22N60N-F102
DISTI # 512-FCP22N60N_F102
ON SemiconductorMOSFET FCP22N60N, in TO220 F102 T/F option0
  • 1:$4.8500
  • 10:$4.1200
  • 100:$3.5700
  • 250:$3.3900
  • 500:$3.0400
  • 1000:$2.5600
  • 2500:$2.4300
FCP22N60NON SemiconductorPower Field-Effect Transistor, 22A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
990
  • 1000:$2.2800
  • 500:$2.4000
  • 100:$2.5000
  • 25:$2.6000
  • 1:$2.8000
FCP22N60NFairchild Semiconductor CorporationPower Field-Effect Transistor, 22A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
4000
  • 1000:$2.2800
  • 500:$2.4000
  • 100:$2.5000
  • 25:$2.6000
  • 1:$2.8000
FCP22N60N
DISTI # FCP22N60N
ON SemiconductorTransistor: N-MOSFET,unipolar,600V,22A,205W,TO220AB28
  • 25:$3.8100
  • 10:$4.2300
  • 3:$5.2700
  • 1:$6.1300
FCP22N60N.
DISTI # 1813502
ON Semiconductor 
RoHS: Compliant
0
  • 1000:$3.4300
  • 500:$3.9700
  • 250:$4.4300
  • 100:$4.6800
  • 10:$5.3800
  • 1:$6.3400
FCP22N60N
DISTI # XSKDRABS0034434
ON SEMICONDUCTOR 
RoHS: Compliant
1600 in Stock0 on Order
  • 1600:$2.9700
  • 1000:$3.1800
Immagine Parte # Descrizione
UCC27324DGNR

Mfr.#: UCC27324DGNR

OMO.#: OMO-UCC27324DGNR

Gate Drivers Dual 4 A Peak High Speed Low-Side
FCP125N60E

Mfr.#: FCP125N60E

OMO.#: OMO-FCP125N60E

MOSFET 600V 29A N-Chnl SuperFET Easy-Drive
SS14

Mfr.#: SS14

OMO.#: OMO-SS14

Schottky Diodes & Rectifiers SMA 40V 1.0A
SG3524N

Mfr.#: SG3524N

OMO.#: OMO-SG3524N

Switching Controllers Regulating Pulse Width Modulator
0215012.MXP

Mfr.#: 0215012.MXP

OMO.#: OMO-0215012-MXP-LITTELFUSE

Cartridge Fuses 250V 12A
FCP125N60E

Mfr.#: FCP125N60E

OMO.#: OMO-FCP125N60E-ON-SEMICONDUCTOR

MOSFET N-CH 600V 29A TO220
T60403-K5024-X090

Mfr.#: T60403-K5024-X090

OMO.#: OMO-T60403-K5024-X090-1136

Audio & Signal Transformers Transformers Audio & Signal PLC Transf PTH SMD 0.88mH 1:1:2
SG3524N

Mfr.#: SG3524N

OMO.#: OMO-SG3524N-TEXAS-INSTRUMENTS

Voltage Regulators - Switching Regulators
UCC27324DGNR

Mfr.#: UCC27324DGNR

OMO.#: OMO-UCC27324DGNR-TEXAS-INSTRUMENTS

Gate Drivers Dual 4 A Peak High Speed Low-Side
SS14

Mfr.#: SS14

OMO.#: OMO-SS14-ON-SEMICONDUCTOR

Schottky Diodes & Rectifiers SMA 40V 1.0A
Disponibilità
Azione:
99
Su ordine:
2082
Inserisci la quantità:
Il prezzo attuale di FCP22N60N è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
4,12 USD
4,12 USD
10
3,50 USD
35,00 USD
100
3,04 USD
304,00 USD
250
2,88 USD
720,00 USD
500
2,58 USD
1 290,00 USD
1000
2,23 USD
2 230,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
Iniziare con
Prodotti più recenti
  • Gate Drivers
    The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
  • Compare FCP22N60N
    FCP22N60 vs FCP22N60N vs FCP22N60NF102
  • NCP137 700 mA LDO Regulators
    ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
  • NCP114 Low Dropout Regulators
    ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
  • LC717A00AR Touch Sensor
    These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
  • FDMQ86530L Quad-MOSFET
    ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
Top