OMO ElectronicOMO Electronic
Expand menu
Ciao, accediIl mio account
0 Carrello

FCP125N60E

FCP125N60E
Mfr. #:
FCP125N60E
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 600V 29A N-Chnl SuperFET Easy-Drive
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FCP125N60E Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FCP125N60E maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
29 A
Rds On - Resistenza Drain-Source:
125 mOhms
Vgs th - Tensione di soglia gate-source:
2.5 V
Vgs - Tensione Gate-Source:
20 V, 30 V
Qg - Carica cancello:
75 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
278 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
SuperFET II
Confezione:
Tubo
Altezza:
16.3 mm
Lunghezza:
10.67 mm
Serie:
FCP125N60E
Tipo di transistor:
1 N-Channel
Larghezza:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
25 S
Tempo di caduta:
23 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
20 ns
Quantità confezione di fabbrica:
800
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
106 ns
Tempo di ritardo di accensione tipico:
23 ns
Unità di peso:
0.063493 oz
Tags
FCP125, FCP12, FCP1, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 29 A, 125 mΩ, TO-220
***ical
Trans MOSFET N-CH 600V 19A 3-Pin(3+Tab) TO-220
***et
Trans MOSFET N-CH 600V 29A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 600V TO220
***et Europe
SUPERFET2 600V 125OHM SLOW VERSION
***ark
MOSFET, N-CH, 600V, 29A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.102ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 29A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.102ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:278W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CAN-N, 600V, 29A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:29A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.102ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:278W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, pleaseconsider the SuperFET II MOSFET series.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
Parte # Mfg. Descrizione Azione Prezzo
FCP125N60E
DISTI # V99:2348_14141718		ON SemiconductorSUPERFET2 600V 125OHM SLOW VER490
  • 5000:$1.7280
  • 2500:$1.7560
  • 1000:$1.8170
  • 500:$1.9930
  • 250:$2.2439
  • 100:$2.3830
  • 10:$2.7780
  • 1:$3.6278
FCP125N60E
DISTI # V36:1790_14141718		ON SemiconductorSUPERFET2 600V 125OHM SLOW VER0
  • 800000:$1.4620
  • 400000:$1.4640
  • 80000:$1.7010
  • 8000:$2.1180
  • 800:$2.1870
FCP125N60E
DISTI # FCP125N60E-ND		ON SemiconductorMOSFET N-CH 600V 29A TO220
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$2.1871
FCP125N60E
DISTI # 25887487		ON SemiconductorSUPERFET2 600V 125OHM SLOW VER490
  • 4:$3.6278
FCP125N60E
DISTI # FCP125N60E		ON SemiconductorSUPERFET2 600V 125OHM SLOW VERSION - Rail/Tube (Alt: FCP125N60E)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 4800:$1.4900
  • 8000:$1.4900
  • 800:$1.5900
  • 1600:$1.5900
  • 3200:$1.5900
FCP125N60E
DISTI # FCP125N60E		ON SemiconductorSUPERFET2 600V 125OHM SLOW VERSION - Bulk (Alt: FCP125N60E)
Min Qty: 168
Container: Bulk		Americas - 0
  • 840:$1.7900
  • 1680:$1.7900
  • 168:$1.8900
  • 336:$1.8900
  • 504:$1.8900
FCP125N60E
DISTI # 512-FCP125N60E		ON SemiconductorMOSFET 600V 29A N-Chnl SuperFET Easy-Drive
RoHS: Compliant		1048
  • 1:$3.3200
  • 10:$2.8200
  • 100:$2.4400
  • 250:$2.3200
  • 500:$2.0800
  • 1000:$1.7500
  • 2500:$1.6600
  • 5000:$1.6000
FCP125N60EFairchild Semiconductor Corporation 
RoHS: Not Compliant		642
  • 1000:$1.8300
  • 500:$1.9300
  • 100:$2.0000
  • 25:$2.0900
  • 1:$2.2500
FCP125N60E
DISTI # 2565217		ON SemiconductorMOSFET, N-CH, 600V, 29A, TO-220-3
RoHS: Compliant		706
  • 1600:$3.8900
  • 800:$4.1700
  • 100:$5.6900
  • 10:$6.9500
  • 1:$7.7900
FCP125N60E
DISTI # 2565217		ON SemiconductorMOSFET, N-CH, 600V, 29A, TO-220-3707
  • 500:£1.4300
  • 250:£1.5900
  • 100:£1.6700
  • 10:£1.9400
  • 1:£2.5700
Immagine Parte # Descrizione
UCC28180DR

Mfr.#: UCC28180DR

OMO.#: OMO-UCC28180DR

 Power Factor Correction - PFC 8-PIN CCM PFC CONTROLLER
MBR140SFT1G

Mfr.#: MBR140SFT1G

OMO.#: OMO-MBR140SFT1G

 Schottky Diodes & Rectifiers 1A 40V
C3D04060E

Mfr.#: C3D04060E

OMO.#: OMO-C3D04060E

 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 600V, 4A
HSS-B20-CP-01

Mfr.#: HSS-B20-CP-01

OMO.#: OMO-HSS-B20-CP-01

 Heat Sinks 18.79 x 22.86x9.52mm clip
65600001009

Mfr.#: 65600001009

OMO.#: OMO-65600001009-LITTELFUSE

 Fuse Holder 5 X 20MM FUSE BLOCK
PV36W103C01B00

Mfr.#: PV36W103C01B00

OMO.#: OMO-PV36W103C01B00-BOURNS

 Trimmer Resistors - Through Hole 10Kohms 10mm Square 25turn
885342211003

Mfr.#: 885342211003

OMO.#: OMO-885342211003-WURTH-ELECTRONICS

 Multilayer Ceramic Capacitors MLCC - SMD/SMT WCAP-CSMH 250V 0.47uF 1812 10%
HSS-B20-CP-01

Mfr.#: HSS-B20-CP-01

OMO.#: OMO-HSS-B20-CP-01-CUI

 HEATSINK TO-220 2.6W ALUMINUM
C4532X7R2J104K230KA

Mfr.#: C4532X7R2J104K230KA

OMO.#: OMO-C4532X7R2J104K230KA-TDK

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1812 0.1uF 630volts X7R 10%
C3D04060E

Mfr.#: C3D04060E

OMO.#: OMO-C3D04060E-WOLFSPEED

 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 600V, 4A
Disponibilità
Azione:
Available
Su ordine:
1984
Inserisci la quantità:
Il prezzo attuale di FCP125N60E è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
3,32 USD
3,32 USD
10
2,82 USD
28,20 USD
100
2,44 USD
244,00 USD
250
2,32 USD
580,00 USD
500
2,08 USD
1 040,00 USD
1000
1,75 USD
1 750,00 USD
2500
1,66 USD
4 150,00 USD
5000
1,60 USD
8 000,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
Iniziare con
Prodotti più recenti
  • Gate Drivers
    Gate Drivers
    The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
  • NCP137 700 mA LDO Regulators
    NCP137 700 mA LDO Regulators
    ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
  • NCP114 Low Dropout Regulators
    NCP114 Low Dropout Regulators
    ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
  • LC717A00AR Touch Sensor
    LC717A00AR Touch Sensor
    These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
  • Compare FCP125N60E
    Compare FCP125N60E
    FCP125N60E vs FCP125N65S3 vs FCP125N65S3R0
  • FDMQ86530L Quad-MOSFET
    FDMQ86530L Quad-MOSFET
    ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
More Newest Products
Top