SI4408DY-T1-GE3

Mfr. #:: SI4408DY-T1-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 20V 21A 3.5W 4.5mohm @ 10V
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI4408DY-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4408DY-T1-GE3 Datasheet SI4408DY-T1-GE3 Datasheet (P4-P6)SI4408DY-T1-GE3 Datasheet (P7)
ECAD Model:
Maggiori informazioni:: SI4408DY-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: E

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: SO-8

Nome depositato:: TrenchFET

Confezione:: Bobina

Altezza:: 1.75 mm

Lunghezza:: 4.9 mm

Serie:: SI4

Larghezza:: 3.9 mm

Marca:: Vishay / Siliconix

Tipologia di prodotto:: MOSFET

Quantità confezione di fabbrica:: 2500

sottocategoria:: MOSFET

Parte # Alias:: SI4408DY-GE3

Unità di peso:: 0.017870 oz

Tags: SI4408, Si440, SI44, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4408DY-T1-GE3 Descrizione

***ure Electronics: Si4408DY Series Single N-Channel 20 V 0.0045 Ohms 1.6 W SMT Power Mosfet -SOIC-8

***et: Trans MOSFET N-CH 20V 14A 8-Pin SOIC N T/R

***nell: N CHANNEL MOSFET, 20V, 21A, SOIC

***ment14 APAC: N CHANNEL MOSFET, 20V, 21A, SOIC; Transi; N CHANNEL MOSFET, 20V, 21A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:20V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; No. of Pins:8

SI4408DY-T1-GE3 Maggiori informazioni

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI4408DY-T1-GE3 DISTI # 24840322	Vishay Intertechnologies	Trans MOSFET N-CH 20V 14A 8-Pin SOIC N T/R RoHS: Compliant	494	38:$1.6750
SI4408DY-T1-GE3 DISTI # SI4408DY-T1-GE3-ND	Vishay Siliconix	MOSFET N-CH 20V 14A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$1.7556
SI4408DY-T1-GE3 DISTI # SI4408DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 14A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4408DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$1.2900 5000:$1.2900 10000:$1.2900 15000:$1.2900 25000:$1.2900
SI4408DY-T1-GE3 DISTI # 26R1871	Vishay Intertechnologies	Trans MOSFET N-CH 20V 14A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 26R1871) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.7700
SI4408DY-T1-GE3 DISTI # 15R5000	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 21A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0045ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Product Range:- RoHS Compliant: Yes	0	1:$1.8900 2000:$1.8000 4000:$1.6800 8000:$1.5600 12000:$1.5000 20000:$1.4800
SI4408DY-T1-GE3 DISTI # 26R1871	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 21A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0045ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Product Range:- RoHS Compliant: Yes	494	1:$1.3400 10:$1.3400 25:$1.3400 50:$1.3400 100:$1.3400 250:$1.3400 500:$1.3400
SI4408DY-T1-GE3 DISTI # 781-SI4408DY-GE3	Vishay Intertechnologies	MOSFET 20V 21A 3.5W 4.5mohm @ 10V RoHS: Compliant	0	1:$2.9800 10:$2.4700 100:$2.0400 250:$1.9700 500:$1.7700 1000:$1.4900 2500:$1.4200 5000:$1.3700
SI4408DY-T1-GE3 DISTI # 1871349	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 21A, SOIC RoHS: Compliant	494	1:£2.6200 10:£2.1700 25:£2.0500 50:£1.9100 100:£1.7900
SI4408DY-T1-GE3 DISTI # 1871349	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 21A, SOIC RoHS: Compliant	494	1:$4.7200 10:$3.9100 100:$3.2300 250:$3.1200 500:$2.8100 1000:$2.3700 2500:$2.2500 5000:$2.2000

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI4408DY-T1-E3 OMO.#: OMO-SI4408DY-T1-E3	MOSFET RECOMMENDED ALT 781-SI4114DY-E3
	Mfr.#: SI4408DY-T1-GE3 OMO.#: OMO-SI4408DY-T1-GE3	MOSFET 20V 21A 3.5W 4.5mohm @ 10V
	Mfr.#: SI4408DY-T1-GE3 OMO.#: OMO-SI4408DY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 20V 21A 3.5W 4.5mohm @ 10V
	Mfr.#: SI4408DY-T1-E3 OMO.#: OMO-SI4408DY-T1-E3-VISHAY	MOSFET N-CH 20V 14A 8-SOIC
	Mfr.#: SI4408DY OMO.#: OMO-SI4408DY-1190	MOSFET 20V 21A 3.5W

Disponibilità

Azione:: Available
Su ordine:: 4000
Inserisci la quantità:

Il prezzo attuale di SI4408DY-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~3,36 USD~~; ~~3,36 USD~~

10: ~~2,78 USD~~; ~~27,80 USD~~

100: ~~2,29 USD~~; ~~229,00 USD~~

250: ~~2,22 USD~~; ~~555,00 USD~~

500: ~~1,99 USD~~; ~~995,00 USD~~

1000: ~~1,67 USD~~; ~~1 670,00 USD~~

Iniziare con

SI4408 3
Si440 59
SI44 574
SI4 2994

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SI4408DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes