CMPA801B025F

CMPA801B025F
Mfr. #:
CMPA801B025F
Produttore:
N/A
Descrizione:
RF Amplifier 8.0-11.0GHz 25Watt GaN Flange
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
CMPA801B025F Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
CMPA801B025F maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Wolfspeed / Cree
categoria di prodotto
Amplificatori RF
Tags
CMPA8, CMPA, CMP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IC RF AMP 8.5GHZ-11GHZ 440208
***hardson RFPD
RF & MW POWER AMPLIFIER
GaN HEMT based MMICs
Cree GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) based MMICs (monolithic microwave integrated circuits) enable extremely wide bandwidths to be achieved in small footprint packages. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.Learn More
X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More
Parte # Mfg. Descrizione Azione Prezzo
CMPA801B025F
DISTI # CMPA801B025F-ND
WolfspeedIC RF AMP 8.5GHZ-11GHZ 440208
RoHS: Compliant
Min Qty: 1
Container: Tray
124In Stock
  • 1:$414.1000
CMPA801B025F-TB
DISTI # CMPA801B025F-TB-ND
WolfspeedIC RF AMP 8.5GHZ-11GHZ MODULE
RoHS: Compliant
Min Qty: 2
Container: Bulk
Temporarily Out of Stock
  • 2:$715.0000
CMPA801B025F
DISTI # 941-CMPA801B025F
Cree, Inc.RF Amplifier GaN MMIC Power Amp 8.0-11.0GHz, 25 Watt
RoHS: Compliant
12
  • 1:$414.1000
CMPA801B025F-TB
DISTI # 941-CMPA801B025F-TB
Cree, Inc.RF Amplifier Test Board without GaN MMIC
RoHS: Compliant
6
  • 1:$715.0000
CMPA801B025F
DISTI # CMPA801B025F
WolfspeedRF & MW POWER AMPLIFIER
RoHS: Compliant
0
  • 1:$414.1000
Immagine Parte # Descrizione
CMPA801B025F-TB

Mfr.#: CMPA801B025F-TB

OMO.#: OMO-CMPA801B025F-TB

RF Amplifier Test Board without GaN MMIC
CMPA801B025F

Mfr.#: CMPA801B025F

OMO.#: OMO-CMPA801B025F

RF Amplifier GaN MMIC Power Amp 8.0-11.0GHz, 25 Watt
CMPA801B025

Mfr.#: CMPA801B025

OMO.#: OMO-CMPA801B025-1190

Nuovo e originale
CMPA801B025D

Mfr.#: CMPA801B025D

OMO.#: OMO-CMPA801B025D-1190

Nuovo e originale
CMPA801B025P

Mfr.#: CMPA801B025P

OMO.#: OMO-CMPA801B025P-1152

RF & MW POWER AMPLIFIER
CMPA801B025F

Mfr.#: CMPA801B025F

OMO.#: OMO-CMPA801B025F-WOLFSPEED

RF Amplifier 8.0-11.0GHz 25Watt GaN Flange
CMPA801B025F-TB

Mfr.#: CMPA801B025F-TB

OMO.#: OMO-CMPA801B025F-TB-WOLFSPEED

IC RF AMP 8.5GHZ-11GHZ MODULE
Disponibilità
Azione:
Available
Su ordine:
4000
Inserisci la quantità:
Il prezzo attuale di CMPA801B025F è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
621,15 USD
621,15 USD
10
590,09 USD
5 900,92 USD
100
559,04 USD
55 903,50 USD
500
527,98 USD
263 988,75 USD
1000
496,92 USD
496 920,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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