RGT30NS65DGTL

RGT30NS65DGTL
Mfr. #:
RGT30NS65DGTL
Produttore:
Rohm Semiconductor
Descrizione:
IGBT Transistors 650V 15A IGBT Stop Trench
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
RGT30NS65DGTL Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
RGT30NS65DGTL DatasheetRGT30NS65DGTL Datasheet (P4)
ECAD Model:
Maggiori informazioni:
RGT30NS65DGTL maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Semiconduttore ROHM
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-263-3
Stile di montaggio:
SMD/SMT
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.65 V
Tensione massima dell'emettitore di gate:
30 V
Corrente continua del collettore a 25 C:
30 A
Pd - Dissipazione di potenza:
133 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Serie:
RGT30NS65D
Confezione:
Bobina
Corrente continua del collettore Ic Max:
30 A
Intervallo operativo di temperatura:
- 40 C to + 175 C
Marca:
Semiconduttore ROHM
Corrente continua del collettore:
15 A
Corrente di dispersione gate-emettitore:
+/- 200 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
1000
sottocategoria:
IGBT
Parte # Alias:
RGT30NS65D(LPDS)
Unità di peso:
0.068654 oz
Tags
RGT30NS, RGT30N, RGT3, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 30A 133000mW 3-Pin(2+Tab) LPDS T/R
***nell
IGBT, SINGLE, 650V, 30A, TO-263S-3
***ark
Igbt, Single, 650V, 30A, To-263S-3; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:133W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-263S; No. Of Pins:3Pins; Rohs Compliant: Yes
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Parte # Mfg. Descrizione Azione Prezzo
RGT30NS65DGTL
DISTI # RGT30NS65DGTLCT-ND
ROHM SemiconductorIGBT 650V 30A 133W TO-263S
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
986In Stock
  • 500:$1.1266
  • 250:$1.2875
  • 100:$1.3712
  • 25:$1.6092
  • 10:$1.7060
  • 1:$1.9000
RGT30NS65DGTL
DISTI # RGT30NS65DGTLDKR-ND
ROHM SemiconductorIGBT 650V 30A 133W TO-263S
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
986In Stock
  • 500:$1.1266
  • 250:$1.2875
  • 100:$1.3712
  • 25:$1.6092
  • 10:$1.7060
  • 1:$1.9000
RGT30NS65DGTL
DISTI # RGT30NS65DGTLTR-ND
ROHM SemiconductorIGBT 650V 30A 133W TO-263S
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$0.8750
  • 1000:$0.9063
RGT30NS65DGTL
DISTI # RGT30NS65DGTL
ROHM SemiconductorTrans IGBT Chip N-CH 650V 30A 3-Pin TO-263S T/R - Tape and Reel (Alt: RGT30NS65DGTL)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.8019
  • 6000:$0.8239
  • 4000:$0.8719
  • 2000:$0.9269
  • 1000:$0.9879
RGT30NS65DGTL
DISTI # 76Y4983
ROHM SemiconductorIGBT, SINGLE, 650V, 30A, TO-263S-3,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:133W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-263S,No. of Pins:3Pins,RoHS Compliant: Yes80
  • 5000:$0.8140
  • 2500:$0.8420
  • 1000:$1.0400
  • 500:$1.1600
  • 100:$1.2500
  • 10:$1.5600
  • 1:$1.8400
RGT30NS65DGTL
DISTI # 755-RGT30NS65DGTL
ROHM SemiconductorIGBT Transistors 650V 15A IGBT Stop Trench
RoHS: Compliant
740
  • 1:$1.8400
  • 10:$1.5700
  • 100:$1.2500
  • 500:$1.1000
  • 1000:$0.9070
  • 2000:$0.8440
  • 5000:$0.8130
  • 10000:$0.7820
RGT30NS65DGTL
DISTI # 2519779
ROHM SemiconductorIGBT, SINGLE, 650V, 30A, TO-263S-3
RoHS: Compliant
80
  • 500:$1.7000
  • 100:$1.9200
  • 10:$2.4200
  • 1:$2.8300
RGT30NS65DGTL
DISTI # 2519779
ROHM SemiconductorIGBT, SINGLE, 650V, 30A, TO-263S-380
  • 500:£0.6800
  • 250:£0.7250
  • 100:£0.7710
  • 10:£1.0100
  • 1:£1.3000
RGT30NS65DGTL
DISTI # IGBT2240
ROHM SemiconductorIGBT650V15A1,65VTO-262
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 1000:$1.3700
  • 2000:$1.2800
  • 3000:$1.2500
  • 4000:$1.1400
RGT30NS65DGTLROHM SemiconductorIGBT Transistors 650V 15A IGBT Stop Trench
RoHS: Compliant
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    STGB15M65DF2

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    IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss
    NTMFS5C628NLT1G

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    PA1005.100QNLT

    Mfr.#: PA1005.100QNLT

    OMO.#: OMO-PA1005-100QNLT-PULSE-ELECTRONICS

    XFMR CURR SENSE 1:100 AECQ SMD
    TPW4R50ANH,L1Q

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    Disponibilità
    Azione:
    740
    Su ordine:
    2723
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    Prezzo di riferimento (USD)
    Quantità
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    est. Prezzo
    1
    1,84 USD
    1,84 USD
    10
    1,57 USD
    15,70 USD
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    1,25 USD
    125,00 USD
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    1,10 USD
    550,00 USD
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