IXFN32N100Q3

IXFN32N100Q3
Mfr. #:
IXFN32N100Q3
Produttore:
Littelfuse
Descrizione:
MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFN32N100Q3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN32N100Q3 DatasheetIXFN32N100Q3 Datasheet (P4-P5)
ECAD Model:
Maggiori informazioni:
IXFN32N100Q3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Montaggio su telaio
Pacchetto/custodia:
SOT-227-4
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
1 kV
Id - Corrente di scarico continua:
28 A
Rds On - Resistenza Drain-Source:
320 mOhms
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
195 nC
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
780 W
Configurazione:
Separare
Nome depositato:
HiPerFET
Confezione:
Tubo
Serie:
IXFN32N1003
Tipo di transistor:
1 N-Channel
Marca:
IXYS
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
300 ns
Quantità confezione di fabbrica:
10
sottocategoria:
MOSFET
Unità di peso:
1.058219 oz
Tags
IXFN32N1, IXFN32N, IXFN32, IXFN3, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descrizione Azione Prezzo
IXFN32N100Q3
DISTI # IXFN32N100Q3-ND
IXYS CorporationMOSFET N-CH 1000V 28A SOT-227
RoHS: Compliant
Min Qty: 1
Container: Tube
10In Stock
  • 100:$36.9000
  • 30:$39.3600
  • 10:$42.5580
  • 1:$45.5100
IXFN32N100Q3
DISTI # 747-IXFN32N100Q3
IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A
RoHS: Compliant
0
  • 1:$45.5100
  • 5:$43.9100
  • 10:$42.5600
  • 25:$39.3600
  • 50:$38.1900
  • 100:$36.9000
  • 200:$34.4400
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OMO.#: OMO-IXFN32N120-1190

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Mfr.#: IXFN32N100P

OMO.#: OMO-IXFN32N100P-IXYS-CORPORATION

MOSFET N-CH 1000V 27A SOT-227B
IXFN32N60

Mfr.#: IXFN32N60

OMO.#: OMO-IXFN32N60-IXYS-CORPORATION

MOSFET 32 Amps 600V
IXFN32N100Q3

Mfr.#: IXFN32N100Q3

OMO.#: OMO-IXFN32N100Q3-IXYS-CORPORATION

IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A
Disponibilità
Azione:
Available
Su ordine:
5000
Inserisci la quantità:
Il prezzo attuale di IXFN32N100Q3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
45,51 USD
45,51 USD
5
43,91 USD
219,55 USD
10
42,56 USD
425,60 USD
25
39,36 USD
984,00 USD
50
38,19 USD
1 909,50 USD
100
36,90 USD
3 690,00 USD
200
34,44 USD
6 888,00 USD
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