IXFN32N100Q3

IXFN32N100Q3
Mfr. #:
IXFN32N100Q3
Produttore:
Littelfuse
Descrizione:
IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFN32N100Q3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
IXFN32N100Q3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
IXFN32N1003
Confezione
Tubo
Unità di peso
1.340411 oz
Stile di montaggio
SMD/SMT
Nome depositato
HyperFET
Pacchetto-Custodia
SOT-227-4
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
780 W
Massima temperatura di esercizio
+ 150 C
Ora di alzarsi
300 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuo-Scarico-Corrente
28 A
Vds-Drain-Source-Breakdown-Voltage
1000 V
Rds-On-Drain-Source-Resistenza
320 mOhms
Polarità del transistor
Canale N
Qg-Gate-Carica
195 nC
Tags
IXFN32N1, IXFN32N, IXFN32, IXFN3, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descrizione Azione Prezzo
IXFN32N100Q3
DISTI # IXFN32N100Q3-ND
IXYS CorporationMOSFET N-CH 1000V 28A SOT-227
RoHS: Compliant
Min Qty: 1
Container: Tube
10In Stock
  • 100:$36.9000
  • 30:$39.3600
  • 10:$42.5580
  • 1:$45.5100
IXFN32N100Q3
DISTI # 747-IXFN32N100Q3
IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A
RoHS: Compliant
0
  • 1:$45.5100
  • 5:$43.9100
  • 10:$42.5600
  • 25:$39.3600
  • 50:$38.1900
  • 100:$36.9000
  • 200:$34.4400
Immagine Parte # Descrizione
IXFN32N120P

Mfr.#: IXFN32N120P

OMO.#: OMO-IXFN32N120P

MOSFET 32 Amps 1200V
IXFN32N80P

Mfr.#: IXFN32N80P

OMO.#: OMO-IXFN32N80P

MOSFET 29 Amps 800V 0.27 Rds
IXFN32N100P

Mfr.#: IXFN32N100P

OMO.#: OMO-IXFN32N100P

MOSFET 32 Amps 1000V 0.32 Rds
IXFN320N17T2

Mfr.#: IXFN320N17T2

OMO.#: OMO-IXFN320N17T2

MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
IXFN32N60

Mfr.#: IXFN32N60

OMO.#: OMO-IXFN32N60

MOSFET 32 Amps 600V
IXFN320N17T2

Mfr.#: IXFN320N17T2

OMO.#: OMO-IXFN320N17T2-IXYS-CORPORATION

MOSFET N-CH 170V 260A SOT227
IXFN32N120

Mfr.#: IXFN32N120

OMO.#: OMO-IXFN32N120-1190

Trans MOSFET N-CH Si 1.2KV 32A 4-Pin SOT-227B
IXFN32N120P

Mfr.#: IXFN32N120P

OMO.#: OMO-IXFN32N120P-IXYS-CORPORATION

MOSFET N-CH 1200V 32A SOT-227B
IXFN32N100P

Mfr.#: IXFN32N100P

OMO.#: OMO-IXFN32N100P-IXYS-CORPORATION

MOSFET N-CH 1000V 27A SOT-227B
IXFN32N60

Mfr.#: IXFN32N60

OMO.#: OMO-IXFN32N60-IXYS-CORPORATION

MOSFET 32 Amps 600V
Disponibilità
Azione:
Available
Su ordine:
2000
Inserisci la quantità:
Il prezzo attuale di IXFN32N100Q3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
51,66 USD
51,66 USD
10
49,08 USD
490,77 USD
100
46,49 USD
4 649,40 USD
500
43,91 USD
21 955,50 USD
1000
41,33 USD
41 328,00 USD
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