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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| HGTD3N60C3S9A DISTI # HGTD3N60C3S9A-ND | ON Semiconductor | IGBT 600V 6A 33W TO252AA RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| HGTD3N60C3S DISTI # HGTD3N60C3S | Renesas Electronics Corporation | - Bulk (Alt: HGTD3N60C3S) RoHS: Not Compliant Min Qty: 695 Container: Bulk | Americas - 0 |
|
| HGTD3N60C3S9A DISTI # HGTD3N60C3S9A | ON Semiconductor | POWER IGBT UFS 3A 600V TF=275NS MAX TO-252 TAPE AND REEL - Bulk (Alt: HGTD3N60C3S9A) RoHS: Compliant Min Qty: 863 Container: Bulk | Americas - 0 |
|
| HGTD3N60C3S9A DISTI # 512-HGTD3N60C3S9A | ON Semiconductor | Motor / Motion / Ignition Controllers & Drivers 6a 600V N-Ch IGBT UFS Series RoHS: Compliant | 0 | |
| HGTD3N60C3S9A | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA RoHS: Compliant | 11451 |
|
| HGTD3N60C3 | Harris Semiconductor | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-251AA RoHS: Not Compliant | 4718 |
|
| HGTD3N60C3S | Harris Semiconductor | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA RoHS: Not Compliant | 300 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: HGTD3N60A4S OMO.#: OMO-HGTD3N60A4S-1190 |
600V, SMPS Series N-Channel IGBT - Bulk (Alt: HGTD3N60A4S) |
|
|
Mfr.#: HGTD3N60B3S OMO.#: OMO-HGTD3N60B3S-1190 |
Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA |
|
|
Mfr.#: HGTD3N60C3 OMO.#: OMO-HGTD3N60C3-1190 |
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-251AA |
|
|
Mfr.#: HGTD3N60C3D OMO.#: OMO-HGTD3N60C3D-1190 |
Nuovo e originale |
|
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Mfr.#: HGTD3N60C3S OMO.#: OMO-HGTD3N60C3S-1190 |
- Bulk (Alt: HGTD3N60C3S) |
|
Mfr.#: HGTD3N60C3S9A |
IGBT 600V 6A 33W TO252AA |
