HGTD3N60A4S

HGTD3N60A4S
Mfr. #:
HGTD3N60A4S
Produttore:
Rochester Electronics, LLC
Descrizione:
600V, SMPS Series N-Channel IGBT - Bulk (Alt: HGTD3N60A4S)
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
HGTD3N60A4S Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
HGTD3, HGTD, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***pNet
Trans IGBT Chip N-CH 600V 17A 3-Pin(2+Tab) DPAK
Parte # Mfg. Descrizione Azione Prezzo
HGTD3N60A4S
DISTI # HGTD3N60A4S
ON Semiconductor600V, SMPS Series N-Channel IGBT - Bulk (Alt: HGTD3N60A4S)
RoHS: Not Compliant
Min Qty: 736
Container: Bulk
Americas - 0
  • 7360:$0.4189
  • 3680:$0.4299
  • 2208:$0.4349
  • 1472:$0.4409
  • 736:$0.4439
HGTD3N60A4S
DISTI # 512-HGTD3N60A4S
ON SemiconductorMotor / Motion / Ignition Controllers & Drivers
RoHS: Not compliant
0
    HGTD3N60A4SFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-252AA
    RoHS: Compliant
    2691
    • 1000:$0.4500
    • 500:$0.4700
    • 100:$0.4900
    • 25:$0.5100
    • 1:$0.5500
    Immagine Parte # Descrizione
    HGTD3N60A4S

    Mfr.#: HGTD3N60A4S

    OMO.#: OMO-HGTD3N60A4S-1190

    600V, SMPS Series N-Channel IGBT - Bulk (Alt: HGTD3N60A4S)
    HGTD3N60B3S

    Mfr.#: HGTD3N60B3S

    OMO.#: OMO-HGTD3N60B3S-1190

    Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA
    HGTD3N60C3

    Mfr.#: HGTD3N60C3

    OMO.#: OMO-HGTD3N60C3-1190

    Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-251AA
    HGTD3N60C3D

    Mfr.#: HGTD3N60C3D

    OMO.#: OMO-HGTD3N60C3D-1190

    Nuovo e originale
    HGTD3N60C3S

    Mfr.#: HGTD3N60C3S

    OMO.#: OMO-HGTD3N60C3S-1190

    - Bulk (Alt: HGTD3N60C3S)
    HGTD3N60C3S9A

    Mfr.#: HGTD3N60C3S9A

    OMO.#: OMO-HGTD3N60C3S9A-ON-SEMICONDUCTOR

    IGBT 600V 6A 33W TO252AA
    Disponibilità
    Azione:
    Available
    Su ordine:
    1000
    Inserisci la quantità:
    Il prezzo attuale di HGTD3N60A4S è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,00 USD
    0,00 USD
    10
    0,00 USD
    0,00 USD
    100
    0,00 USD
    0,00 USD
    500
    0,00 USD
    0,00 USD
    1000
    0,00 USD
    0,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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