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IRF9953PBF

IRF9953PBF
Mfr. #:
IRF9953PBF
Produttore:
Infineon / IR
Descrizione:
MOSFET DUAL -30V P-CH 20V VGS MAX
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF9953PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF9953PBF DatasheetIRF9953PBF Datasheet (P4-P6)IRF9953PBF Datasheet (P7)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SO-8
Numero di canali:
2 Channel
Polarità del transistor:
Canale P
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
2.3 A
Rds On - Resistenza Drain-Source:
250 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
6.9 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
2 W
Configurazione:
Dual
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
1.75 mm
Lunghezza:
4.9 mm
Tipo di transistor:
2 P-Channel
Tipo:
MOSFET di potenza
Larghezza:
3.9 mm
Marca:
Infineon / IR
Tempo di caduta:
6.9 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
14 ns
Quantità confezione di fabbrica:
95
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
20 ns
Tempo di ritardo di accensione tipico:
9.7 ns
Parte # Alias:
SP001565680
Unità di peso:
0.019048 oz
Tags
IRF9953, IRF995, IRF99, IRF9, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.25Ohm;ID -2.3A;SO-8;PD 2W;VGS +/-20V
***ure Electronics
IRF9953PBF: 30 V 2.3 A 250 mOhm SMT Hexfet Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Low RDS(on); Dynamic dv/dt Rating; Fast Switching; Dual P-Channel MOSFET
***ernational Rectifier
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
***ical
Trans MOSFET P-CH 30V 2.3A 8-Pin SOIC
***Components
MOSFET P-Channel 30V 2.3A SOIC8
***i-Key
MOSFET 2P-CH 30V 2.3A 8-SOIC
***ronik
2xP-CH 30V 2,3A 250mOhm SO-8 RoHSconf
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-2.3A; On Resistance, Rds(on):250mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***nell
MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Type:MOSFET; Transistor Polarity:Dual P; Voltage, Vds Typ:-30V; Current, Id Cont:2.3A; Resistance, Rds On:0.25ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:10A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation:2W; Power, Pd:2W; Row Pitch:6.3mm; SMD Marking:F9953; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:2; Voltage, Vds Max:30V; Width, External:4.05mm
***ment14 APAC
MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:10A; Row Pitch:6.3mm; SMD Marking:F9953; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V
Parte # Mfg. Descrizione Azione Prezzo
IRF9953TRPBF
DISTI # IRF9953PBFCT-ND		Infineon Technologies AGMOSFET 2P-CH 30V 2.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2738In Stock
  • 1000:$0.4143
  • 500:$0.5079
  • 100:$0.6715
  • 10:$0.8580
  • 1:$0.9700
IRF9953TRPBF
DISTI # IRF9953PBFDKR-ND		Infineon Technologies AGMOSFET 2P-CH 30V 2.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2738In Stock
  • 1000:$0.4143
  • 500:$0.5079
  • 100:$0.6715
  • 10:$0.8580
  • 1:$0.9700
IRF9953PBF
DISTI # IRF9953PBF-ND		Infineon Technologies AGMOSFET 2P-CH 30V 2.3A 8-SOIC
RoHS: Compliant
Min Qty: 3800
Container: Tube		Limited Supply - Call
    IRF9953TRPBF
    DISTI # IRF9953PBFTR-ND    		Infineon Technologies AGMOSFET 2P-CH 30V 2.3A 8-SOIC
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 4000:$0.3683
    IRF9953PBF-EL
    DISTI # IRF9953PBF-EL    		Infineon Technologies AGTrans MOSFET P-CH 30V 2.3A 8-Pin SO Tube (Alt: IRF9953PBF-EL)
    RoHS: Compliant
    Min Qty: 95
    Container: Tube    		Europe - 0
      IRF9953PBF
      DISTI # 97K2255      		Infineon Technologies AGMOSFET Transistor, Dual P Channel, 2.3 A, 30 V, 250 mohm, -10 V, -1 V RoHS Compliant: Yes0
        IRF9953PBF
        DISTI # 942-IRF9953PBF        		Infineon Technologies AGMOSFET DUAL -30V P-CH 20V VGS MAX
        RoHS: Compliant        		0
          IRF9953PBFInternational RectifierINSTOCK130
            IRF9953PBF
            DISTI # 9102230            		Infineon Technologies AGMOSFET, DUAL, PP, LOGIC, SO-8
            RoHS: Compliant            		0
            • 1:$1.4400
            • 10:$1.1800
            • 100:$0.9280
            • 1000:$0.7800
            • 2000:$0.6870
            Immagine Parte # Descrizione
            IRF9910TRPBF

            Mfr.#: IRF9910TRPBF

            OMO.#: OMO-IRF9910TRPBF

            		 MOSFET MOSFT DUAL NCh 20V 10A
            IRF9952PBF

            Mfr.#: IRF9952PBF

            OMO.#: OMO-IRF9952PBF

            		 MOSFET 30V DUAL N / P CH 20V VGS MAX
            IRF9952QTRPBF

            Mfr.#: IRF9952QTRPBF

            OMO.#: OMO-IRF9952QTRPBF

            		 MOSFET AUTO HEXFET SO-8
            IRF9952TRPBF-CUT TAPE

            Mfr.#: IRF9952TRPBF-CUT TAPE

            OMO.#: OMO-IRF9952TRPBF-CUT-TAPE-1190

            		 Nuovo e originale
            IRF9910PBF-1

            Mfr.#: IRF9910PBF-1

            OMO.#: OMO-IRF9910PBF-1-1190

            		 Nuovo e originale
            IRF9952PBF

            Mfr.#: IRF9952PBF

            OMO.#: OMO-IRF9952PBF-INFINEON-TECHNOLOGIES

            		 MOSFET N/P-CH 30V 8-SOIC
            IRF9952QPBF

            Mfr.#: IRF9952QPBF

            OMO.#: OMO-IRF9952QPBF-1190

            		 MOSFET, DUAL N/P-CHANNEL, 30V, 3.5A, SO-8, Q101 QUALIFIED
            IRF9952TR

            Mfr.#: IRF9952TR

            OMO.#: OMO-IRF9952TR-INFINEON-TECHNOLOGIES

            		 MOSFET N/P-CH 30V 8-SOIC
            IRF9953

            Mfr.#: IRF9953

            OMO.#: OMO-IRF9953-INFINEON-TECHNOLOGIES

            		 MOSFET 2P-CH 30V 2.3A 8-SOIC
            IRF9953TR

            Mfr.#: IRF9953TR

            OMO.#: OMO-IRF9953TR-INFINEON-TECHNOLOGIES

            		 MOSFET 2P-CH 30V 2.3A 8-SOIC
            Disponibilità
            Azione:
            Available
            Su ordine:
            4500
            Inserisci la quantità:
            Il prezzo attuale di IRF9953PBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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