GS8161E36DD-333

GS8161E36DD-333
Mfr. #:
GS8161E36DD-333
Produttore:
GSI Technology
Descrizione:
SRAM 2.5 or 3.3V 512K x 36 18M
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GS8161E36DD-333 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
GS8161E36DD-333 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Tecnologia GSI
Categoria di prodotto:
SRAM
Dimensione della memoria:
18 Mbit
Organizzazione:
512 k x 36
Orario di accesso:
4.5 ns
Frequenza massima di clock:
333 MHz
Tipo di interfaccia:
Parallelo
Tensione di alimentazione - Max:
3.6 V
Tensione di alimentazione - Min:
2.3 V
Corrente di alimentazione - Max:
260 mA, 315 mA
Temperatura di esercizio minima:
0 C
Temperatura massima di esercizio:
+ 70 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
BGA-165
Confezione:
Vassoio
Tipo di memoria:
SDR
Serie:
GS8161E36DD
Tipo:
Conduttura DCD/Flusso passante
Marca:
Tecnologia GSI
Sensibile all'umidità:
Tipologia di prodotto:
SRAM
Quantità confezione di fabbrica:
36
sottocategoria:
Memoria e archiviazione dati
Nome depositato:
SyncBurst
Tags
GS8161E36DD-33, GS8161E36DD-3, GS8161E36DD, GS8161E36, GS8161E3, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Quad 2.5V/3.3V 18M-Bit 512K x 36 4.5ns/2.5ns 165-Pin FBGA
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Immagine Parte # Descrizione
GS8161E36DGT-250

Mfr.#: GS8161E36DGT-250

OMO.#: OMO-GS8161E36DGT-250

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DGD-250IV

Mfr.#: GS8161E36DGD-250IV

OMO.#: OMO-GS8161E36DGD-250IV

SRAM 1.8/2.5V 512K x 36 18M
GS8161E18DD-200V

Mfr.#: GS8161E18DD-200V

OMO.#: OMO-GS8161E18DD-200V

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGD-250V

Mfr.#: GS8161E18DGD-250V

OMO.#: OMO-GS8161E18DGD-250V

SRAM 1.8/2.5V 1M x 18 18M
GS8161E32DGT-250

Mfr.#: GS8161E32DGT-250

OMO.#: OMO-GS8161E32DGT-250

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DD-200

Mfr.#: GS8161E32DD-200

OMO.#: OMO-GS8161E32DD-200

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DGT-333

Mfr.#: GS8161E32DGT-333

OMO.#: OMO-GS8161E32DGT-333

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E18DGT-200V

Mfr.#: GS8161E18DGT-200V

OMO.#: OMO-GS8161E18DGT-200V

SRAM 1.8/2.5V 1M x 18 18M
GS8161E36DGT-375I

Mfr.#: GS8161E36DGT-375I

OMO.#: OMO-GS8161E36DGT-375I

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E32DGT-400I

Mfr.#: GS8161E32DGT-400I

OMO.#: OMO-GS8161E32DGT-400I

SRAM 2.5 or 3.3V 512K x 32 16M
Disponibilità
Azione:
Available
Su ordine:
3500
Inserisci la quantità:
Il prezzo attuale di GS8161E36DD-333 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
20,38 USD
20,38 USD
25
18,93 USD
473,25 USD
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