GS8161E32DGT-250

GS8161E32DGT-250
Mfr. #:
GS8161E32DGT-250
Produttore:
GSI Technology
Descrizione:
SRAM 2.5 or 3.3V 512K x 32 16M
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GS8161E32DGT-250 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
GS8161E32DGT-250 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Tecnologia GSI
Categoria di prodotto:
SRAM
RoHS:
Y
Dimensione della memoria:
18 Mbit
Organizzazione:
512 k x 32
Orario di accesso:
5.5 ns
Frequenza massima di clock:
250 MHz
Tipo di interfaccia:
Parallelo
Tensione di alimentazione - Max:
3.6 V
Tensione di alimentazione - Min:
2.3 V
Corrente di alimentazione - Max:
230 mA, 250 mA
Temperatura di esercizio minima:
0 C
Temperatura massima di esercizio:
+ 70 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TQFP-100
Confezione:
Vassoio
Tipo di memoria:
SDR
Serie:
GS8161E32DGT
Tipo:
Conduttura DCD/Flusso passante
Marca:
Tecnologia GSI
Sensibile all'umidità:
Tipologia di prodotto:
SRAM
Quantità confezione di fabbrica:
36
sottocategoria:
Memoria e archiviazione dati
Nome depositato:
NBT SRAM
Tags
GS8161E32DGT-25, GS8161E32DGT-2, GS8161E32DGT, GS8161E32DG, GS8161E32, GS8161E3, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
NBT SRAMs
GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that allow utilization of all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. 
Immagine Parte # Descrizione
GS8161E36DGT-250I

Mfr.#: GS8161E36DGT-250I

OMO.#: OMO-GS8161E36DGT-250I

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DGT-150I

Mfr.#: GS8161E36DGT-150I

OMO.#: OMO-GS8161E36DGT-150I

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E32DD-250

Mfr.#: GS8161E32DD-250

OMO.#: OMO-GS8161E32DD-250

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E36DD-150

Mfr.#: GS8161E36DD-150

OMO.#: OMO-GS8161E36DD-150

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E32DGD-400

Mfr.#: GS8161E32DGD-400

OMO.#: OMO-GS8161E32DGD-400

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E36DGD-400I

Mfr.#: GS8161E36DGD-400I

OMO.#: OMO-GS8161E36DGD-400I

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E32DD-333

Mfr.#: GS8161E32DD-333

OMO.#: OMO-GS8161E32DD-333

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DGD-333I

Mfr.#: GS8161E32DGD-333I

OMO.#: OMO-GS8161E32DGD-333I

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E36DGT-375

Mfr.#: GS8161E36DGT-375

OMO.#: OMO-GS8161E36DGT-375

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DGD-375

Mfr.#: GS8161E36DGD-375

OMO.#: OMO-GS8161E36DGD-375

SRAM 2.5 or 3.3V 512K x 36 18M
Disponibilità
Azione:
Available
Su ordine:
4500
Inserisci la quantità:
Il prezzo attuale di GS8161E32DGT-250 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
14,08 USD
14,08 USD
25
13,07 USD
326,75 USD
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