HGT1S12N60B3DS

HGT1S12N60B3DS
Mfr. #:
HGT1S12N60B3DS
Produttore:
Rochester Electronics, LLC
Descrizione:
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
HGT1S12N60B3DS Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
HGT1S12N60B, HGT1S12, HGT1S1, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S
French Electronic Distributor since 1988
***i-Key
27A, 600V, UFS N-CHANNEL IGBT W/
Parte # Mfg. Descrizione Azione Prezzo
HGT1S12N60B3DSHarris SemiconductorInsulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
RoHS: Not Compliant
1100
  • 1000:$1.2800
  • 500:$1.3400
  • 100:$1.4000
  • 25:$1.4600
  • 1:$1.5700
Immagine Parte # Descrizione
HGT1S12N60A4S9A

Mfr.#: HGT1S12N60A4S9A

OMO.#: OMO-HGT1S12N60A4S9A

IGBT Transistors 600V N-Channel IGBT SMPS Series
HGT1S12N60A4D

Mfr.#: HGT1S12N60A4D

OMO.#: OMO-HGT1S12N60A4D-1190

Nuovo e originale
HGT1S12N60A4DS9A

Mfr.#: HGT1S12N60A4DS9A

OMO.#: OMO-HGT1S12N60A4DS9A-1190

Nuovo e originale
HGT1S12N60B3D

Mfr.#: HGT1S12N60B3D

OMO.#: OMO-HGT1S12N60B3D-1190

Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA
HGT1S12N60B3DS

Mfr.#: HGT1S12N60B3DS

OMO.#: OMO-HGT1S12N60B3DS-1190

Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S12N60B3G

Mfr.#: HGT1S12N60B3G

OMO.#: OMO-HGT1S12N60B3G-1190

Nuovo e originale
HGT1S12N60B3S

Mfr.#: HGT1S12N60B3S

OMO.#: OMO-HGT1S12N60B3S-1190

Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S12N60C3DS

Mfr.#: HGT1S12N60C3DS

OMO.#: OMO-HGT1S12N60C3DS-37

24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes - Bulk (Alt: HGT1S12N60C3DS)
HGT1S12N60C3S

Mfr.#: HGT1S12N60C3S

OMO.#: OMO-HGT1S12N60C3S-1190

Nuovo e originale
HGT1S12N60C3S9AR4501

Mfr.#: HGT1S12N60C3S9AR4501

OMO.#: OMO-HGT1S12N60C3S9AR4501-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
5000
Inserisci la quantità:
Il prezzo attuale di HGT1S12N60B3DS è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,92 USD
1,92 USD
10
1,82 USD
18,24 USD
100
1,73 USD
172,80 USD
500
1,63 USD
816,00 USD
1000
1,54 USD
1 536,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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