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HGT1S12N60A4S9A

HGT1S12N60A4S9A
Mfr. #:
HGT1S12N60A4S9A
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors 600V N-Channel IGBT SMPS Series
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
HGT1S12N60A4S9A Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HGT1S12N60A4S9A DatasheetHGT1S12N60A4S9A Datasheet (P4-P6)HGT1S12N60A4S9A Datasheet (P7-P8)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
E
Tecnologia:
si
Pacchetto/custodia:
TO-263AB-3
Stile di montaggio:
SMD/SMT
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
2.7 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
35 A
Pd - Dissipazione di potenza:
298 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
HGT1S12N60A4S9A
Confezione:
Bobina
Corrente continua del collettore Ic Max:
54 A
Altezza:
4.83 mm
Lunghezza:
10.67 mm
Larghezza:
9.65 mm
Marca:
ON Semiconductor / Fairchild
Corrente continua del collettore:
55 A
Corrente di dispersione gate-emettitore:
+/- 250 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
800
sottocategoria:
IGBT
Unità di peso:
0.046296 oz
Tags
HGT1S12N60A, HGT1S12, HGT1S1, HGT1S, HGT1, HGT
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***ser
IGBTs 600V N-Channel IGBT SMPS Series
***i-Key
IGBT SMPS N-CHAN 600V TO-263AB
***rchild Semiconductor
The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Parte # Mfg. Descrizione Azione Prezzo
HGT1S12N60A4S9A
DISTI # HGT1S12N60A4S9ATR-ND		ON SemiconductorIGBT 600V 54A 167W TO263AB
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Limited Supply - Call
    HGT1S12N60A4S9A
    DISTI # HGT1S12N60A4S9ACT-ND    		ON SemiconductorIGBT 600V 54A 167W TO263AB
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      HGT1S12N60A4S9A
      DISTI # HGT1S12N60A4S9ADKR-ND      		ON SemiconductorIGBT 600V 54A 167W TO263AB
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        HGT1S12N60A4S9A
        DISTI # 512-HGT1S12N60A4S9A        		ON SemiconductorIGBT Transistors 600V N-Channel IGBT SMPS Series
        RoHS: Compliant        		0
          HGT1S12N60A4S9AFairchild Semiconductor Corporation 
          RoHS: Not Compliant          		750
            Immagine Parte # Descrizione
            HGT1S12N60A4DS

            Mfr.#: HGT1S12N60A4DS

            OMO.#: OMO-HGT1S12N60A4DS

            		 IGBT Transistors 12A 600V N-Ch
            HGT1S12N60A4

            Mfr.#: HGT1S12N60A4

            OMO.#: OMO-HGT1S12N60A4-1190

            		 Nuovo e originale
            HGT1S12N60A4D

            Mfr.#: HGT1S12N60A4D

            OMO.#: OMO-HGT1S12N60A4D-1190

            		 Nuovo e originale
            HGT1S12N60A4S9A

            Mfr.#: HGT1S12N60A4S9A

            OMO.#: OMO-HGT1S12N60A4S9A-ON-SEMICONDUCTOR

            		 IGBT 600V 54A 167W TO263AB
            HGT1S12N60B3S

            Mfr.#: HGT1S12N60B3S

            OMO.#: OMO-HGT1S12N60B3S-1190

            		 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
            HGT1S12N60C3DS

            Mfr.#: HGT1S12N60C3DS

            OMO.#: OMO-HGT1S12N60C3DS-37

            		 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes - Bulk (Alt: HGT1S12N60C3DS)
            HGT1S12N60C3DS9A

            Mfr.#: HGT1S12N60C3DS9A

            OMO.#: OMO-HGT1S12N60C3DS9A-1190

            		 Nuovo e originale
            HGT1S12N60C3S

            Mfr.#: HGT1S12N60C3S

            OMO.#: OMO-HGT1S12N60C3S-1190

            		 Nuovo e originale
            HGT1S12N60C3S9A

            Mfr.#: HGT1S12N60C3S9A

            OMO.#: OMO-HGT1S12N60C3S9A-1190

            		 Nuovo e originale
            HGT1S12N60C3S9AR4501

            Mfr.#: HGT1S12N60C3S9AR4501

            OMO.#: OMO-HGT1S12N60C3S9AR4501-1190

            		 Nuovo e originale
            Disponibilità
            Azione:
            Available
            Su ordine:
            4500
            Inserisci la quantità:
            Il prezzo attuale di HGT1S12N60A4S9A è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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