BSM120D12P2C005

BSM120D12P2C005
Mfr. #:
BSM120D12P2C005
Produttore:
Rohm Semiconductor
Descrizione:
MOSFET 2N-CH 1200V 120A MODULE
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSM120D12P2C005 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
BSM120D12P2C005 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Semiconduttore Rohm
categoria di prodotto
FET - Array
Serie
BSM120D12P2C005
Prodotto
Moduli a semiconduttore di potenza
Tipo
Modulo di alimentazione SiC
Confezione
Massa
Stile di montaggio
Vite
Intervallo operativo di temperatura
- 40 C to + 150 C
Pacchetto-Custodia
Modulo
Temperatura di esercizio
-40°C ~ 150°C (TJ)
Tipo di montaggio
*
Pacchetto-dispositivo-fornitore
Modulo
Configurazione
Mezzo ponte
Tipo FET
2 N-Channel (Half Bridge)
Potenza-Max
780W
Drain-to-Source-Voltage-Vdss
1200V (1.2kV)
Ingresso-Capacità-Ciss-Vds
14000pF @ 10V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
120A
Rds-On-Max-Id-Vgs
-
Vgs-th-Max-Id
2.7V @ 22mA
Gate-Carica-Qg-Vgs
-
Tags
BSM1, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Module, N Channel, 120 A, 1.2 kV, 2.7 V RoHS Compliant: Yes
***Components
Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C ROHM BSM120D12P2C005
***et
Trans SiC MOSFET N-CH 1.2KV 120A 10-Pin Case C Tray
***i-Key
MOSFET 2N-CH 1200V 120A MODULE
***ukat
SiC-N-Ch-Half-Bridge+2xSBD 1200V 134A C-
***ment14 APAC
MODULE, POWER, SIC, 1200V, 120A
***p One Stop Japan
Power Module Automotive 10-Pin Tray
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
Parte # Mfg. Descrizione Azione Prezzo
BSM120D12P2C005
DISTI # BSM120D12P2C005-ND
ROHM SemiconductorMOSFET 2N-CH 1200V 120A MODULE
RoHS: Compliant
Min Qty: 1
Container: Bulk
On Order
  • 10:$372.1830
  • 1:$391.0600
BSM120D12P2C005
DISTI # BSM120D12P2C005
ROHM SemiconductorTrans SiC MOSFET N-CH 1.2KV 120A 10-Pin Case C Tray - Bulk (Alt: BSM120D12P2C005)
RoHS: Compliant
Min Qty: 12
Container: Bulk
Americas - 0
  • 12:$387.8900
  • 24:$363.6900
  • 48:$342.3900
  • 72:$323.3900
  • 120:$314.6900
BSM120D12P2C005
DISTI # 755-BSM120D12P2C005
ROHM SemiconductorDiscrete Semiconductor Modules Mod: 1200V 120A (w/ Diode)
RoHS: Compliant
0
  • 1:$391.0600
  • 5:$381.6300
BSM120D12P2C005
DISTI # 2345472
ROHM SemiconductorMODULE, POWER, SIC, 1200V, 120A
RoHS: Compliant
0
  • 1:£371.0000
  • 5:£307.0000
Immagine Parte # Descrizione
BSM120D12P2C005

Mfr.#: BSM120D12P2C005

OMO.#: OMO-BSM120D12P2C005

Discrete Semiconductor Modules Mod: 1200V 120A (w/ Diode)
BSM120D12P2C005

Mfr.#: BSM120D12P2C005

OMO.#: OMO-BSM120D12P2C005-ROHM-SEMI

MOSFET 2N-CH 1200V 120A MODULE
Disponibilità
Azione:
Available
Su ordine:
2500
Inserisci la quantità:
Il prezzo attuale di BSM120D12P2C005 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
472,04 USD
472,04 USD
10
448,43 USD
4 484,33 USD
100
424,83 USD
42 483,15 USD
500
401,23 USD
200 614,90 USD
1000
377,63 USD
377 628,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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