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BSM120D12P2C005

BSM120D12P2C005
Mfr. #:
BSM120D12P2C005
Produttore:
Rohm Semiconductor
Descrizione:
Discrete Semiconductor Modules Mod: 1200V 120A (w/ Diode)
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSM120D12P2C005 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
BSM120D12P2C005 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Semiconduttore ROHM
Categoria di prodotto:
Moduli a semiconduttore discreti
RoHS:
Y
Prodotto:
Moduli a semiconduttore di potenza
Tipo:
MOSFET di potenza SiC
Vgs - Tensione Gate-Source:
- 6 V, 22 V
Stile di montaggio:
Montaggio a vite
Pacchetto/custodia:
Modulo
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Serie:
BSMx
Confezione:
Massa
Configurazione:
Mezzo ponte
Altezza:
21.1 mm
Lunghezza:
122 mm
Larghezza:
45.6 mm
Marca:
Semiconduttore ROHM
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Tempo di ritardo tipico:
45 ns
Tempo di caduta:
60 ns
Id - Corrente di scarico continua:
134 A
Pd - Dissipazione di potenza:
935 W
Tipologia di prodotto:
Moduli a semiconduttore discreti
Ora di alzarsi:
50 ns
Quantità confezione di fabbrica:
12
sottocategoria:
Moduli a semiconduttore discreti
Tempo di ritardo allo spegnimento tipico:
170 ns
Tempo di ritardo di accensione tipico:
45 ns
Vds - Tensione di rottura Drain-Source:
1200 V
Vgs th - Tensione di soglia gate-source:
1.6 V
Parte # Alias:
BSM120D12P2C005
Unità di peso:
9.856004 oz
Tags
BSM1, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Module, N Channel, 120 A, 1.2 kV, 2.7 V RoHS Compliant: Yes
***Components
Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C ROHM BSM120D12P2C005
***et
Trans SiC MOSFET N-CH 1.2KV 120A 10-Pin Case C Tray
***i-Key
MOSFET 2N-CH 1200V 120A MODULE
***ukat
SiC-N-Ch-Half-Bridge+2xSBD 1200V 134A C-
***ment14 APAC
MODULE, POWER, SIC, 1200V, 120A
***p One Stop Japan
Power Module Automotive 10-Pin Tray
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
Parte # Mfg. Descrizione Azione Prezzo
BSM120D12P2C005
DISTI # BSM120D12P2C005-ND		ROHM SemiconductorMOSFET 2N-CH 1200V 120A MODULE
RoHS: Compliant
Min Qty: 1
Container: Bulk		On Order
  • 10:$372.1830
  • 1:$391.0600
BSM120D12P2C005
DISTI # BSM120D12P2C005		ROHM SemiconductorTrans SiC MOSFET N-CH 1.2KV 120A 10-Pin Case C Tray - Bulk (Alt: BSM120D12P2C005)
RoHS: Compliant
Min Qty: 12
Container: Bulk		Americas - 0
  • 12:$387.8900
  • 24:$363.6900
  • 48:$342.3900
  • 72:$323.3900
  • 120:$314.6900
BSM120D12P2C005
DISTI # 755-BSM120D12P2C005		ROHM SemiconductorDiscrete Semiconductor Modules Mod: 1200V 120A (w/ Diode)
RoHS: Compliant		0
  • 1:$391.0600
  • 5:$381.6300
BSM120D12P2C005
DISTI # 2345472		ROHM SemiconductorMODULE, POWER, SIC, 1200V, 120A
RoHS: Compliant		0
  • 1:£371.0000
  • 5:£307.0000
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Mfr.#: TL431ACLP

OMO.#: OMO-TL431ACLP-TEXAS-INSTRUMENTS

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Disponibilità
Azione:
Available
Su ordine:
4000
Inserisci la quantità:
Il prezzo attuale di BSM120D12P2C005 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
355,48 USD
355,48 USD
5
346,93 USD
1 734,65 USD
10
338,32 USD
3 383,20 USD
25
333,57 USD
8 339,25 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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