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IRF8313PBF

IRF8313PBF
Mfr. #:
IRF8313PBF
Produttore:
Infineon / IR
Descrizione:
MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF8313PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8313PBF DatasheetIRF8313PBF Datasheet (P4-P6)IRF8313PBF Datasheet (P7-P9)IRF8313PBF Datasheet (P10)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SO-8
Numero di canali:
2 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
9.7 A
Rds On - Resistenza Drain-Source:
21.6 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
6 nC
Pd - Dissipazione di potenza:
2 W
Configurazione:
Dual
Confezione:
Tubo
Altezza:
1.75 mm
Lunghezza:
4.9 mm
Tipo di transistor:
2 N-Channel
Larghezza:
3.9 mm
Marca:
Infineon / IR
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
95
sottocategoria:
MOSFET
Parte # Alias:
SP001570694
Unità di peso:
0.019048 oz
Tags
IRF8313, IRF831, IRF83, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8
***ark
Dual N Channel Mosfet, 30V, 9.7A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; On Resistance Rds(On):0.0155Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V
***ment14 APAC
MOSFET, DUAL N-CH 30V 9.7A SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.7A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
Parte # Mfg. Descrizione Azione Prezzo
IRF8313PBF
DISTI # V99:2348_13891188		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
RoHS: Compliant		182
  • 1:$0.2929
IRF8313PBF
DISTI # IRF8313PBF-ND		Infineon Technologies AGMOSFET 2N-CH 30V 9.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRF8313PBF..
    DISTI # 30728279    		Infineon Technologies AGIRF8313PBF..735
    • 260:$0.2969
    IRF8313PBF
    DISTI # 26198223    		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
    RoHS: Compliant    		182
    • 25:$0.2929
    IRF8313PBF
    DISTI # IRF8313PBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC - Rail/Tube (Alt: IRF8313PBF)
    RoHS: Compliant
    Min Qty: 3800
    Container: Tube    		Americas - 4924
      IRF8313PBF..
      DISTI # 10R3491      		Infineon Technologies AGDUAL N CHANNEL MOSFET, 30V, 9.7A, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:8.1A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V735
      • 1:$0.1930
      • 10:$0.1930
      • 100:$0.1930
      • 500:$0.1930
      • 1000:$0.1930
      • 2500:$0.1930
      • 10000:$0.1930
      IRF8313PBF
      DISTI # 942-IRF8313PBF      		Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
      RoHS: Compliant      		0
        IRF8313PBFInfineon Technologies AGPower Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
        RoHS: Compliant        		1439
        • 1000:$0.2400
        • 500:$0.2500
        • 100:$0.2600
        • 25:$0.2700
        • 1:$0.2900
        IRF8313PBFInternational RectifierPower Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
        RoHS: Compliant        		5182
        • 1000:$0.2400
        • 500:$0.2500
        • 100:$0.2600
        • 25:$0.2700
        • 1:$0.2900
        IRF8313TRPBF
        DISTI # IRF8313PBF-GURT        		Infineon Technologies AG2xN-Ch 30V 9,7A 2,0W 0,0155R SO8
        RoHS: Compliant        		2600
        • 50:€0.2460
        • 100:€0.2060
        • 500:€0.1860
        • 2000:€0.1790
        IRF8313PBF
        DISTI # C1S327400167723        		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
        RoHS: Compliant        		123
        • 50:$0.2240
        • 10:$0.3250
        Immagine Parte # Descrizione
        IRF8327STRPBF

        Mfr.#: IRF8327STRPBF

        OMO.#: OMO-IRF8327STRPBF

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        IRF830BPBF

        Mfr.#: IRF830BPBF

        OMO.#: OMO-IRF830BPBF

        		 MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS
        IRF830STRL

        Mfr.#: IRF830STRL

        OMO.#: OMO-IRF830STRL

        		 MOSFET RECOMMENDED ALT 844-IRF830STRLPBF
        IRF830AL

        Mfr.#: IRF830AL

        OMO.#: OMO-IRF830AL

        		 MOSFET RECOMMENDED ALT 844-IRF830ALPBF
        IRF8304MTR1PBF

        Mfr.#: IRF8304MTR1PBF

        OMO.#: OMO-IRF8304MTR1PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 28A MX
        IRF830/ SIHF830

        Mfr.#: IRF830/ SIHF830

        OMO.#: OMO-IRF830-SIHF830-1190

        		 Nuovo e originale
        IRF8308MTRPBF.

        Mfr.#: IRF8308MTRPBF.

        OMO.#: OMO-IRF8308MTRPBF--1190

        		 Nuovo e originale
        IRF830B

        Mfr.#: IRF830B

        OMO.#: OMO-IRF830B-1190

        		 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        IRF8313TRPBF

        Mfr.#: IRF8313TRPBF

        OMO.#: OMO-IRF8313TRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET 2N-CH 30V 9.7A 8-SOIC
        IRF833

        Mfr.#: IRF833

        OMO.#: OMO-IRF833-1190

        		 Nuovo e originale
        Disponibilità
        Azione:
        Available
        Su ordine:
        2500
        Inserisci la quantità:
        Il prezzo attuale di IRF8313PBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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