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IPA60R170CFD7XKSA1

IPA60R170CFD7XKSA1
Mfr. #:
IPA60R170CFD7XKSA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET HIGH POWER_NEW
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPA60R170CFD7XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPA60R170CFD7XKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220FP-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
8 A
Rds On - Resistenza Drain-Source:
144 mOhms
Vgs th - Tensione di soglia gate-source:
3.5 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
28 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
26 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Tubo
Serie:
CoolMOS CFD7
Tipo di transistor:
1 N-Channel
Marca:
Tecnologie Infineon
Tempo di caduta:
9 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
15 ns
Quantità confezione di fabbrica:
500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
68 ns
Tempo di ritardo di accensione tipico:
31 ns
Parte # Alias:
IPA60R170CFD7 SP001617978
Tags
IPA60R1, IPA60R, IPA60, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor High Power 170mΩ 26W 600V PG-TO 220 FullPAK
***ark
Mosfet, N-Ch, 600V, 8A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.144Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descrizione Azione Prezzo
IPA60R170CFD7XKSA1
DISTI # C1S322000697407		Infineon Technologies AGMOSFETs
RoHS: Compliant		500
  • 500:$1.6100
IPA60R170CFD7XKSA1
DISTI # IPA60R170CFD7XKSA1-ND		Infineon Technologies AGMOSFET N-CH TO220FP-3
RoHS: Compliant
Min Qty: 1
Container: Tube		555In Stock
  • 1000:$1.5617
  • 500:$1.8848
  • 100:$2.4233
  • 10:$3.0160
  • 1:$3.3400
IPA60R170CFD7XKSA1
DISTI # IPA60R170CFD7XKSA1		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 170mΩ 26W 600V PG-TO 220 FullPAK - Rail/Tube (Alt: IPA60R170CFD7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$1.3900
  • 1000:$1.2900
  • 2000:$1.2900
  • 3000:$1.1900
  • 5000:$1.1900
IPA60R170CFD7XKSA1
DISTI # 43AC9320		Infineon Technologies AGMOSFET, N-CH, 600V, 8A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.144ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes270
  • 1:$3.1600
  • 10:$2.7200
  • 100:$2.2200
  • 500:$1.9800
  • 1000:$1.6700
  • 2500:$1.5800
  • 5000:$1.5300
IPA60R170CFD7XKSA1
DISTI # 726-IPA60R170CFD7XKS		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		0
  • 1:$2.8900
  • 10:$2.4500
  • 100:$1.9600
  • 500:$1.7200
  • 1000:$1.4200
IPA60R170CFD7XKSA1
DISTI # 2807980		Infineon Technologies AGMOSFET, N-CH, 600V, 8A, TO-220FP
RoHS: Compliant		330
  • 1:£2.5400
  • 10:£1.9100
  • 100:£1.5300
  • 250:£1.4400
  • 500:£1.3400
IPA60R170CFD7XKSA1
DISTI # 2807980		Infineon Technologies AGMOSFET, N-CH, 600V, 8A, TO-220FP
RoHS: Compliant		260
  • 1:$2.9600
  • 10:$2.7700
  • 100:$2.4500
  • 250:$2.3100
  • 500:$2.2000
  • 1000:$2.0900
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Disponibilità
Azione:
Available
Su ordine:
1989
Inserisci la quantità:
Il prezzo attuale di IPA60R170CFD7XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,88 USD
2,88 USD
10
2,44 USD
24,40 USD
100
1,95 USD
195,00 USD
500
1,71 USD
855,00 USD
1000
1,42 USD
1 420,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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