FDMS8622

FDMS8622
Mfr. #:
FDMS8622
Produttore:
ON Semiconductor
Descrizione:
MOSFET N-CH 100V 4.8A 8-PQFN
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDMS8622 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FDMS8622 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Fairchild Semiconductor
categoria di prodotto
FET - Single
Serie
PowerTrenchR
Confezione
Imballaggio alternativo Digi-ReelR
Unità di peso
0.002610 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
8-PowerTDFN
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
8-PQFN (5x6), Power56
Configurazione
Separare
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
2.5W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
100V
Ingresso-Capacità-Ciss-Vds
400pF @ 50V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
4.8A (Ta), 16.5A (Tc)
Rds-On-Max-Id-Vgs
56 mOhm @ 4.8A, 10V
Vgs-th-Max-Id
4V @ 250μA
Gate-Carica-Qg-Vgs
7nC @ 10V
Pd-Power-Dissipazione
2.5 W
Tempo di caduta
2.1 ns
Ora di alzarsi
1.7 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
4.8 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
3 V
Rds-On-Drain-Source-Resistenza
45 mOhms
Polarità del transistor
Canale N
Qg-Gate-Carica
5 nC
Transconduttanza diretta-Min
9 S
Tags
FDMS862, FDMS86, FDMS8, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 17 A, 100 V, 8-Pin PQFN ON Semiconductor FDMS8622
***Semiconductor
N-Channel Power Trench® MOSFET 100V, 16.5A, 56mΩ
***ure Electronics
Single N-Channel 100 V 97 mOhm 7 nC 31 W PowerTrench SMT Mosfet - POWER 56-8
***p One Stop Global
Trans MOSFET N-CH 100V 4.8A 8-Pin Power 56 T/R
*** Source Electronics
MOSFET N-CH 100V 4.8A 8-PQFN
***i-Key
MOSFET N-CH 100V 6.5A 8-PQFN
***ark
Fet 100V 56.0 Mohm Pqfn56 Rohs Compliant: Yes
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 16.5A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:16.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:31W; Transistor Case Style:PQFN; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:PowerTrench Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, CANALE N, 100V, 16,5A, PQFN; Polarità Transistor:Canale N; Corrente Continua di Drain Id:16.5A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.045ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:31W; Modello Case Transistor:PQFN; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:PowerTrench Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descrizione Azione Prezzo
FDMS8622
DISTI # FDMS8622CT-ND
ON SemiconductorMOSFET N-CH 100V 4.8A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
11303In Stock
  • 1000:$0.4351
  • 500:$0.5438
  • 100:$0.7342
  • 10:$0.9520
  • 1:$1.0900
FDMS8622
DISTI # FDMS8622DKR-ND
ON SemiconductorMOSFET N-CH 100V 4.8A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
11303In Stock
  • 1000:$0.4351
  • 500:$0.5438
  • 100:$0.7342
  • 10:$0.9520
  • 1:$1.0900
FDMS8622
DISTI # FDMS8622TR-ND
ON SemiconductorMOSFET N-CH 100V 4.8A 8-PQFN
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 3000:$0.3996
FDMS8622
DISTI # FDMS8622
ON SemiconductorTrans MOSFET N-CH 100V 4.8A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS8622)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.3129
  • 6000:$0.3109
  • 12000:$0.3069
  • 18000:$0.3029
  • 30000:$0.2959
FDMS8622.
DISTI # 23AC5233
Fairchild Semiconductor CorporationFET 100V 56.0 MOHM PQFN56 , ROHS COMPLIANT: YES0
  • 1:$0.3250
  • 3000:$0.3210
  • 6000:$0.3170
  • 12000:$0.3130
  • 18000:$0.3070
  • 30000:$0.3000
FDMS8622Fairchild Semiconductor CorporationPower Field-Effect Transistor, 4.8A I(D), 100V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
RoHS: Compliant
77000
  • 1000:$0.4000
  • 500:$0.4200
  • 100:$0.4400
  • 25:$0.4500
  • 1:$0.4900
FDMS8622
DISTI # 512-FDMS8622
ON SemiconductorMOSFET 100V N-Channel PowerTrench MOSFET
RoHS: Compliant
2002
  • 1:$0.9000
  • 10:$0.7440
  • 100:$0.4800
  • 1000:$0.3840
  • 3000:$0.3250
  • 9000:$0.3130
  • 24000:$0.3000
FDMS8622
DISTI # 7605918P
ON SemiconductorMOSFET N-CHANNEL 100V 4.8A POWER 56, RL1245
  • 50:£0.3220
  • 100:£0.2960
  • 250:£0.2840
  • 500:£0.2760
Immagine Parte # Descrizione
FDMS3572

Mfr.#: FDMS3572

OMO.#: OMO-FDMS3572

MOSFET 80V N-Ch UltraFET PowerTrench MOSFET
FDMS7600AS

Mfr.#: FDMS7600AS

OMO.#: OMO-FDMS7600AS

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FDMS86180

Mfr.#: FDMS86180

OMO.#: OMO-FDMS86180

MOSFET 100V/20V N-Channel PTNG MOSFET
FDMS2510SDC

Mfr.#: FDMS2510SDC

OMO.#: OMO-FDMS2510SDC

MOSFET 20V N-Chan Dual Cool PowerTrench SyncFET
FDMS3624S

Mfr.#: FDMS3624S

OMO.#: OMO-FDMS3624S-ON-SEMICONDUCTOR

MOSFET 2N-CH 25V 17.5A/30A 8PQFN
FDMS7670E

Mfr.#: FDMS7670E

OMO.#: OMO-FDMS7670E-1190

Nuovo e originale
FDMS8460S

Mfr.#: FDMS8460S

OMO.#: OMO-FDMS8460S-1190

Nuovo e originale
FDMS86500DC

Mfr.#: FDMS86500DC

OMO.#: OMO-FDMS86500DC-ON-SEMICONDUCTOR

MOSFET N CH 60V 29A 8-PQFN
FDMS86568-F085

Mfr.#: FDMS86568-F085

OMO.#: OMO-FDMS86568-F085-ON-SEMICONDUCTOR

MOSFET N-CH 60V 80A POWER56
FDMS86381-F085

Mfr.#: FDMS86381-F085

OMO.#: OMO-FDMS86381-F085-ON-SEMICONDUCTOR

POWER TRENCH MOSFET
Disponibilità
Azione:
Available
Su ordine:
1000
Inserisci la quantità:
Il prezzo attuale di FDMS8622 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,44 USD
0,44 USD
10
0,42 USD
4,22 USD
100
0,40 USD
39,95 USD
500
0,38 USD
188,65 USD
1000
0,36 USD
355,10 USD
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