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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SI2308DS-T1-E3 DISTI # SI2308DS-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 60V 2A SOT23-3 Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI2308DS-T1-E3 DISTI # SI2308DS-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 60V 2A SOT23-3 Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI2308DS-T1-E3 DISTI # SI2308DS-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 60V 2A SOT23-3 Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI2308DS-T1-E3 DISTI # 1470158 | Vishay Intertechnologies | RoHS: Compliant | 0 |
|
| SI2308DST1E3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 3865 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SI2308DS-T1-E3 OMO.#: OMO-SI2308DS-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3 |
|
Mfr.#: SI2308DS-T1 OMO.#: OMO-SI2308DS-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3 |
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Mfr.#: SI2308DS-T1-E3 OMO.#: OMO-SI2308DS-T1-E3-VISHAY |
MOSFET N-CH 60V 2A SOT23-3 |
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Mfr.#: SI2308DS-T1-E3/B02 OMO.#: OMO-SI2308DS-T1-E3-B02-1190 |
Nuovo e originale |
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Mfr.#: SI2308DS-T1-ES , MAX6425 |
Nuovo e originale |
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Mfr.#: SI2308DS-T1-GE3 OMO.#: OMO-SI2308DS-T1-GE3-1190 |
N CH MOSFET, Transistor Polarity:N Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:60V, On Resistance Rds(on):125mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:3 |