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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SI2308DS-T1-GE3 DISTI # 15R4904 | Vishay Intertechnologies | N CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:60V,On Resistance Rds(on):125mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs Typ:3V,Power Dissipation Pd:1.25W RoHS Compliant: Yes | 0 | |
| SI2308DS-T1-GE3 DISTI # 84R8024 | Vishay Intertechnologies | N CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:1.25W RoHS Compliant: Yes | 0 |
|
| SI2308DS-T1-GE3 DISTI # 781-SI2308DS-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3 RoHS: Compliant | 0 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SI2308DS-T1-E3 OMO.#: OMO-SI2308DS-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3 |
|
Mfr.#: SI2308DS OMO.#: OMO-SI2308DS-1190 |
Nuovo e originale |
|
|
Mfr.#: SI2308DS-T1 OMO.#: OMO-SI2308DS-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3 |
|
Mfr.#: SI2308DS-T1-E3 OMO.#: OMO-SI2308DS-T1-E3-VISHAY |
MOSFET N-CH 60V 2A SOT23-3 |
|
|
Mfr.#: SI2308DS-T1-E3/B02 OMO.#: OMO-SI2308DS-T1-E3-B02-1190 |
Nuovo e originale |
|
|
Mfr.#: SI2308DS-T1-ES , MAX6425 |
Nuovo e originale |
|
|
Mfr.#: SI2308DS-T1-GE3 OMO.#: OMO-SI2308DS-T1-GE3-1190 |
N CH MOSFET, Transistor Polarity:N Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:60V, On Resistance Rds(on):125mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:3 |