IRL3103PBF

IRL3103PBF
Mfr. #:
IRL3103PBF
Produttore:
Infineon / IR
Descrizione:
MOSFET MOSFT 30V 56A 12mOhm 22nC LogLvlAB
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRL3103PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRL3103PBF DatasheetIRL3103PBF Datasheet (P4-P6)IRL3103PBF Datasheet (P7-P9)
ECAD Model:
Maggiori informazioni:
IRL3103PBF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
56 A
Rds On - Resistenza Drain-Source:
16 mOhms
Vgs - Tensione Gate-Source:
16 V
Qg - Carica cancello:
22 nC
Pd - Dissipazione di potenza:
83 W
Configurazione:
Separare
Confezione:
Tubo
Altezza:
15.65 mm
Lunghezza:
10 mm
Tipo di transistor:
1 N-Channel
Larghezza:
4.4 mm
Marca:
Infineon / IR
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Parte # Alias:
SP001571808
Unità di peso:
0.211644 oz
Tags
IRL3103P, IRL3103, IRL31, IRL3, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 12 Milliohms;ID 64A;TO-220AB;PD 94W;VGS +/-1
***ure Electronics
Single N-Channel 30 V 12 mOhm 33 nC HEXFET® Power Mosfet - TO-220-3
***p One Stop Japan
Trans MOSFET N-CH Si 30V 64A 3-Pin(3+Tab) TO-220AB Tube
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
***ment14 APAC
N CHANNEL MOSFET, 30V, 64A TO-220AB; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:30V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:83W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:64A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Pulse Current Idm:220A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IRL3103PBF
DISTI # IRL3103PBF-ND
Infineon Technologies AGMOSFET N-CH 30V 64A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
4477In Stock
  • 1000:$0.5879
  • 500:$0.7447
  • 100:$0.9602
  • 10:$1.2150
  • 1:$1.3700
IRL3103PBF
DISTI # C1S322000631599
Infineon Technologies AGTrans MOSFET N-CH Si 30V 64A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
3000
  • 3000:$0.5850
  • 1000:$0.6030
  • 500:$0.6570
  • 200:$0.7450
  • 100:$0.7690
  • 50:$0.8810
  • 10:$1.3100
  • 5:$1.4600
IRL3103PBF
DISTI # SP001571808
Infineon Technologies AGTrans MOSFET N-CH 30V 64A 3-Pin(3+Tab) TO-220AB (Alt: SP001571808)
RoHS: Compliant
Min Qty: 1
Europe - 1500
  • 1:€0.5569
  • 10:€0.4949
  • 25:€0.4459
  • 50:€0.4049
  • 100:€0.3709
  • 500:€0.3429
  • 1000:€0.3179
IRL3103PBF
DISTI # IRL3103PBF
Infineon Technologies AGTrans MOSFET N-CH 30V 64A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRL3103PBF)
RoHS: Compliant
Min Qty: 3000
Container: Tube
Americas - 0
  • 3000:$0.4099
  • 5000:$0.3949
  • 8000:$0.3809
  • 15000:$0.3679
  • 30000:$0.3619
IRL3103PBF
DISTI # 38K3051
Infineon Technologies AGMOSFET, N, 30V, 56A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:56A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation RoHS Compliant: Yes0
  • 2500:$0.5340
  • 1000:$0.5660
  • 500:$0.6770
  • 100:$0.7670
  • 10:$0.9980
  • 1:$1.1700
IRL3103PBF
DISTI # 63J7752
Infineon Technologies AGN CHANNEL MOSFET, 30V, 64A TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,MSL:- RoHS Compliant: Yes446
  • 2500:$0.5340
  • 1000:$0.5660
  • 1:$0.6170
  • 10:$0.6170
  • 100:$0.6170
  • 500:$0.6170
IRL3103PBF
DISTI # 70017086
Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 12 Milliohms,ID 64A,TO-220AB,PD 94W,VGS +/-1
RoHS: Compliant
0
  • 3000:$1.9300
  • 6000:$1.8910
  • 15000:$1.8340
  • 30000:$1.7560
  • 75000:$1.6410
IRL3103PBF
DISTI # 942-IRL3103PBF
Infineon Technologies AGMOSFET MOSFT 30V 56A 12mOhm 22nC LogLvlAB
RoHS: Compliant
0
  • 1:$1.1700
  • 10:$0.9980
  • 100:$0.7670
  • 500:$0.6770
  • 1000:$0.5350
  • 2000:$0.4740
IRL3103PBFInfineon Technologies AGPower Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
150
  • 1000:$0.4700
  • 500:$0.5000
  • 100:$0.5200
  • 25:$0.5400
  • 1:$0.5800
IRL3103PBF
DISTI # 1702241
Infineon Technologies AGMOSFET N-CH 30V 64A HEXFET TO-220AB, TU250
  • 50:£0.7360
  • 250:£0.5550
  • 500:£0.4840
IRL3103PBF
DISTI # IRL3103PBF
Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,56A,83W,TO220AB207
  • 1:$0.6900
  • 3:$0.6300
  • 10:$0.5300
  • 50:$0.4700
IRL3103PBF
DISTI # IRL3103PBF
Infineon Technologies AGN-LogL 30V 64A 94W 0,012R TO220AB
RoHS: Compliant
870
  • 10:€0.6250
  • 50:€0.3850
  • 200:€0.3250
  • 500:€0.3129
IRL3103PBFInternational Rectifier 
RoHS: Compliant
Europe - 510
    IRL3103PBF
    DISTI # 8650969
    Infineon Technologies AGMOSFET, N, 30V, 56A, TO-220
    RoHS: Compliant
    3165
    • 500:£0.3670
    • 250:£0.4620
    • 100:£0.4730
    • 25:£0.6410
    • 5:£0.7330
    IRL3103PBF
    DISTI # 8650969
    Infineon Technologies AGMOSFET, N, 30V, 56A, TO-220
    RoHS: Compliant
    3153
    • 2000:$0.7500
    • 1000:$0.8470
    • 500:$1.0800
    • 100:$1.2200
    • 10:$1.5800
    • 1:$1.8500
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    Disponibilità
    Azione:
    Available
    Su ordine:
    1984
    Inserisci la quantità:
    Il prezzo attuale di IRL3103PBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
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    Prezzo unitario
    est. Prezzo
    1
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    1,16 USD
    10
    1,00 USD
    9,98 USD
    100
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    0,68 USD
    338,50 USD
    1000
    0,54 USD
    535,00 USD
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    4 570,00 USD
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