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IPW60R040C7XKSA1

IPW60R040C7XKSA1
Mfr. #:
IPW60R040C7XKSA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET HIGH POWER_NEW
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPW60R040C7XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPW60R040C7XKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-247-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
50 A
Rds On - Resistenza Drain-Source:
34 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
107 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
227 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Tubo
Altezza:
21.1 mm
Lunghezza:
16.13 mm
Serie:
CoolMOS C7
Tipo di transistor:
1 N-Channel
Larghezza:
5.21 mm
Marca:
Tecnologie Infineon
Tempo di caduta:
3.2 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
11 ns
Quantità confezione di fabbrica:
240
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
81 ns
Tempo di ritardo di accensione tipico:
18.5 ns
Parte # Alias:
IPW60R040C7 SP001296190
Unità di peso:
1.340411 oz
Tags
IPW60R040, IPW60R04, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 40 mOhm 107 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Mosfet, N-Ch, 600V, 50A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descrizione Azione Prezzo
IPW60R040C7XKSA1
DISTI # V99:2348_06377973		Infineon Technologies AGTrans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		213
  • 240:$8.0290
  • 10:$9.3820
  • 1:$10.1310
IPW60R040C7XKSA1
DISTI # V36:1790_06377973		Infineon Technologies AGTrans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7XKSA1-ND    		Infineon Technologies AGMOSFET N-CH 600V 50A TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		253In Stock
    • 1200:$8.3617
    • 720:$9.0294
    • 240:$10.4205
    • 10:$12.0900
    • 1:$13.2000
    IPW60R040C7XKSA1
    DISTI # 31924760    		Infineon Technologies AGTrans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		213
    • 240:$8.6312
    • 10:$10.0856
    • 1:$10.8908
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPW60R040C7)
    RoHS: Compliant
    Min Qty: 240    		Asia - 240
    • 240:$8.4308
    • 480:$8.1589
    • 720:$7.9039
    • 1200:$7.6644
    • 2400:$7.5500
    • 6000:$7.4390
    • 12000:$7.3312
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7XKSA1    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPW60R040C7XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 240:$7.1900
    • 480:$6.9900
    • 960:$6.6900
    • 1440:$6.4900
    • 2400:$6.3900
    IPW60R040C7XKSA1
    DISTI # SP001296190    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001296190)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€7.5900
    • 10:€6.9900
    • 25:€6.6900
    • 50:€6.3900
    • 100:€6.1900
    • 500:€5.9900
    • 1000:€5.5900
    IPW60R040C7XKSA1
    DISTI # 13AC9095    		Infineon Technologies AGMOSFET, N-CH, 600V, 50A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes89
    • 500:$8.5400
    • 250:$9.0500
    • 100:$9.4500
    • 50:$10.0100
    • 25:$10.5600
    • 10:$10.9800
    • 1:$11.8300
    IPW60R040C7XKSA1
    DISTI # 726-IPW60R040C7XKSA1    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		463
    • 1:$10.6100
    • 10:$9.7600
    • 25:$9.3500
    • 100:$8.2400
    • 250:$7.8400
    • 500:$7.3300
    IPW60R040C7XKSA1
    DISTI # 1702279    		Infineon Technologies AGMOSFET N-CH 600V 50A COOLMOS C7 TO-247, TU145
    • 300:£6.0470
    • 150:£6.3310
    • 30:£7.4300
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7XKSA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,600V,50A,227W,PG-TO247-328
    • 1:$18.5200
    • 3:$15.9900
    • 10:$12.7500
    • 25:$11.1100
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7    		Infineon Technologies AGN-Ch 600V 50A 227W 0,04R TO247
    RoHS: Compliant    		0
    • 1:€10.7000
    • 10:€7.7000
    • 50:€6.2000
    • 100:€5.9100
    IPW60R040C7XKSA1
    DISTI # 2726076    		Infineon Technologies AGMOSFET, N-CH, 600V, 50A, TO-247-3
    RoHS: Compliant    		0
    • 240:$14.0500
    • 10:$16.5300
    • 1:$18.1800
    IPW60R040C7XKSA1
    DISTI # 2726076    		Infineon Technologies AGMOSFET, N-CH, 600V, 50A, TO-247-3
    RoHS: Compliant    		0
    • 100:£6.4800
    • 50:£6.9200
    • 10:£7.3500
    • 5:£8.3400
    • 1:£8.9300
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    Disponibilità
    Azione:
    Available
    Su ordine:
    1984
    Inserisci la quantità:
    Il prezzo attuale di IPW60R040C7XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    10,61 USD
    10,61 USD
    10
    9,76 USD
    97,60 USD
    25
    9,35 USD
    233,75 USD
    100
    8,24 USD
    824,00 USD
    250
    7,84 USD
    1 960,00 USD
    500
    7,33 USD
    3 665,00 USD
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