IDH20G65C6XKSA1

IDH20G65C6XKSA1
Mfr. #:
IDH20G65C6XKSA1
Produttore:
Infineon Technologies
Descrizione:
Schottky Diodes & Rectifiers SIC DIODES
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IDH20G65C6XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IDH20G65C6XKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Diodi e raddrizzatori Schottky
RoHS:
Y
Prodotto:
Diodi Schottky al carburo di silicio
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Se - Corrente diretta:
41 A
Vrrm - Tensione inversa ripetitiva:
650 V
Vf - Tensione diretta:
1.25 V
Ifsm - Corrente diretta in avanti:
99 A
Configurazione:
Separare
Tecnologia:
SiC
Ir - Corrente inversa:
2 uA
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Confezione:
Tubo
Marca:
Tecnologie Infineon
Pd - Dissipazione di potenza:
108 W
Tipologia di prodotto:
Diodi e raddrizzatori Schottky
Quantità confezione di fabbrica:
500
sottocategoria:
Diodi e raddrizzatori
Nome depositato:
CoolSiC
Parte # Alias:
IDH20G65C6 SP001600962
Unità di peso:
0.063493 oz
Tags
IDH20G6, IDH20G, IDH20, IDH2, IDH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Diode Schottky SiC 650V 41A 2-Pin(2+Tab) TO-220 Tube
***ronik
SiC-Diode 20A 650V 1,25V TO220
***i-Key
DIODE SCHOTTKY 650V 41A TO220-2
***ark
Sic Schottky Diode, 650V, 41A, To-220; Product Range:coolsic 6G 650V Series; Diode Configuration:single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:41A; Total Capacitive Charge Qc:26.8Nc; Diode Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. SIC SCHOTTKY DIODE, 650V, 41A, TO-220; Product Range:CoolSiC 6G 650V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:41A; Total Capacitive Charge Qc:26.8nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Forward Current If(AV):41A; Forward Surge Current Ifsm Max:99A; Forward Voltage VF Max:1.35V; Operating Temperature Max:175°C; Semiconductor Technology:SiC
***nell
DIODO SCHOTTKY SIC 650V 41A TO-220; Gamma Prodotti:CoolSiC 6G 650V Series; Configurazione Diodo:Singolo; Tensione Inversa Ripetitiva Vrrm Max:650V; Corrente Diretta Continua If:41A; Potenza Reattiva Capacitiva Qc:26.8nC; Modello Involucro Diodo:TO-220; Numero di Pin:2 Pin; Temperatura di Giunzione Tj Max:175°C; Standard di Qualifica Automotive:-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Diretta If(AV):41A; Corrente di Picco Diretta Ifsm Max:99A; Tecnologia Semiconduttori:SiC; Temperatura di Esercizio Max:175°C; Tensione Diretta VF Max:1.35V
***ineon
The CoolSiC Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F). | Summary of Features: The lowest V F: 1.25V; Best-in-class figure of merit (Q c x V F); No reverse recovery charge; Temperature independent switching behavior; High dv/dt ruggedness; Optimized thermal behavior | Benefits: Improved system efficiency over all load conditions; Increased system power density; Reduced cooling requirements and increased system reliability; Enables extremely fast switching; Easy and effective match with CoolMOS 7 families; Optimal price performance | Target Applications: Server; Telecom; PC power; Solar; Lighting
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
CoolSiC™ 650V Schottky 6th Generation Diodes
Infineon CoolSiC™ 650V Schottky 6th Generation Diodes feature a proprietary diffusion soldering process, a more compact design, thin-wafer technology and a novel Schottky metal system. This results in improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF). CoolSiC™ Generation 6 complement the 600V and 650V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.
Parte # Mfg. Descrizione Azione Prezzo
IDH20G65C6XKSA1
DISTI # V36:1790_18191491
Infineon Technologies AGIDH20G65C6XKSA10
  • 500000:$3.9310
  • 250000:$3.9370
  • 50000:$4.7910
  • 5000:$6.6080
  • 500:$6.9300
IDH20G65C6XKSA1
DISTI # IDH20G65C6XKSA1-ND
Infineon Technologies AGDIODE SCHOTTKY 650V 41A TO220-2
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 500:$5.2313
  • 100:$6.0075
  • 25:$6.9188
  • 10:$7.2560
  • 1:$8.0300
IDH20G65C6XKSA1
DISTI # SP001600962
Infineon Technologies AGSIC DIODES (Alt: SP001600962)
RoHS: Compliant
Min Qty: 1
Europe - 500
  • 1000:€3.6900
  • 500:€3.9900
  • 100:€4.0900
  • 50:€4.2900
  • 25:€4.3900
  • 10:€4.5900
  • 1:€5.0900
IDH20G65C6XKSA1
DISTI # IDH20G65C6XKSA1
Infineon Technologies AGSIC DIODES - Rail/Tube (Alt: IDH20G65C6XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 5000:$4.1900
  • 3000:$4.2900
  • 2000:$4.4900
  • 1000:$4.5900
  • 500:$4.7900
IDH20G65C6XKSA1
DISTI # 33AC2817
Infineon Technologies AGSIC SCHOTTKY DIODE, 650V, 41A, TO-220,Product Range:CoolSiC 6G 650V Series,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:650V,Continuous Forward Current If:41A,Total Capacitive Charge Qc:26.8nC,Diode Case RoHS Compliant: Yes47
  • 500:$5.2900
  • 250:$5.8000
  • 100:$6.0700
  • 50:$6.5300
  • 25:$6.9900
  • 10:$7.3300
  • 1:$8.1100
IDH20G65C6XKSA1
DISTI # 726-IDH20G65C6XKSA1
Infineon Technologies AGSchottky Diodes & Rectifiers SIC DIODES
RoHS: Compliant
5170
  • 1:$8.0300
  • 10:$7.2600
  • 25:$6.9200
  • 100:$6.0100
  • 250:$5.7400
  • 500:$5.2400
  • 1000:$4.5600
IDH20G65C6XKSA1
DISTI # IDH20G65C6
Infineon Technologies AGDiode: Schottky rectifying,SiC,THT,650V,20A,108W,PG-TO220-249
  • 50:$5.9100
  • 10:$6.5900
  • 3:$7.4600
  • 1:$8.2800
IDH20G65C6XKSA1
DISTI # 2779283
Infineon Technologies AGSIC SCHOTTKY DIODE, 650V, 41A, TO-220
RoHS: Compliant
83
  • 250:$6.7600
  • 100:$6.8900
  • 50:$7.2700
  • 10:$7.6900
  • 5:$8.6900
  • 1:$9.3100
IDH20G65C6XKSA1
DISTI # 2779283
Infineon Technologies AGSIC SCHOTTKY DIODE, 650V, 41A, TO-220198
  • 100:£4.5900
  • 50:£4.9400
  • 10:£5.2800
  • 5:£6.1200
  • 1:£6.6600
Immagine Parte # Descrizione
IGT60R070D1ATMA1

Mfr.#: IGT60R070D1ATMA1

OMO.#: OMO-IGT60R070D1ATMA1

MOSFET 600V CoolGaN Power Transistor
IPW60R040C7XKSA1

Mfr.#: IPW60R040C7XKSA1

OMO.#: OMO-IPW60R040C7XKSA1

MOSFET HIGH POWER_NEW
IDH20G120C5XKSA1

Mfr.#: IDH20G120C5XKSA1

OMO.#: OMO-IDH20G120C5XKSA1

Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
STPSC10H065DY

Mfr.#: STPSC10H065DY

OMO.#: OMO-STPSC10H065DY

Schottky Diodes & Rectifiers Automotive 650 V power Schottky silicon carbide diode
CVFD20065A

Mfr.#: CVFD20065A

OMO.#: OMO-CVFD20065A

Schottky Diodes & Rectifiers SiC Schottky Diode 650V, 20A
BOOSTXL-3PHGANINV

Mfr.#: BOOSTXL-3PHGANINV

OMO.#: OMO-BOOSTXL-3PHGANINV

Power Management IC Development Tools BOOSTXL-3PHGANINV
IPW60R040C7XKSA1

Mfr.#: IPW60R040C7XKSA1

OMO.#: OMO-IPW60R040C7XKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 600V 50A TO247-3
BOOSTXL-3PHGANINV

Mfr.#: BOOSTXL-3PHGANINV

OMO.#: OMO-BOOSTXL-3PHGANINV-TEXAS-INSTRUMENTS

48V 10A GAN INVERTER BOOSTERPACK
IDWD30G120C5XKSA1

Mfr.#: IDWD30G120C5XKSA1

OMO.#: OMO-IDWD30G120C5XKSA1-1190

SIC SCHOTTKY 1200V 30A TO247-2
IGT60R070D1ATMA1

Mfr.#: IGT60R070D1ATMA1

OMO.#: OMO-IGT60R070D1ATMA1-INFINEON-TECHNOLOGIES

IC GAN FET 600V 60A 8HSOF
Disponibilità
Azione:
Available
Su ordine:
1988
Inserisci la quantità:
Il prezzo attuale di IDH20G65C6XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
8,03 USD
8,03 USD
10
7,26 USD
72,60 USD
25
6,92 USD
173,00 USD
100
6,01 USD
601,00 USD
250
5,74 USD
1 435,00 USD
500
5,24 USD
2 620,00 USD
1000
4,56 USD
4 560,00 USD
2500
4,39 USD
10 975,00 USD
Iniziare con
Prodotti più recenti
  • M-SERIES D-Sub Connectors
    The M-SERIES D-Sub connectors offer high reliability performance for the most challenging design applications.
  • TLV493D-A1B6 3D Magnetic Sensor
    Infineon's combination of 3-axis measurement in a small package, with low power consumption, provides the TLV493D-A1B6 contactless position sensing.
  • IR25750 Current Sensing IC
    IR25750’s gate-drive input provides the VCC supply voltage to the IC and synchronizes the RDS(ON) or VCE(ON) sensing circuit.
  • 600 V Trench Ultra-Fast IGBTs
    International Rectifier's 40 A IRGP4640D, 50A IRGP4650D and 60A IRGP4660d IGBTs utilize trench thin wafer technology to offer lower conduction and switching losses.
  • Compare IDH20G65C6XKSA1
    IDH20G65C5 vs IDH20G65C5D2065C5 vs IDH20G65C5S
  • DPS310 Digital Barometric Pressure Sensors
    Infineon's DPS310XTSA1 is a miniaturized digital barometric air pressure sensor with high accuracy, high stability, and low current consumption.
Top