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IXFH12N90P

IXFH12N90P
Mfr. #:
IXFH12N90P
Produttore:
Littelfuse
Descrizione:
Darlington Transistors MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFH12N90P Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IXFH12N90P maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
IXFH12N90
Confezione
Tubo
Unità di peso
0.229281 oz
Stile di montaggio
Foro passante
Nome depositato
HyperFET
Pacchetto-Custodia
TO-247-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
380 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
68 ns
Ora di alzarsi
34 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuo-Scarico-Corrente
12 A
Vds-Drain-Source-Breakdown-Voltage
900 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
3.5 V to 6.5 V
Rds-On-Drain-Source-Resistenza
900 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
50 ns
Tempo di ritardo all'accensione tipico
32 ns
Qg-Gate-Carica
56 nC
Transconduttanza diretta-Min
8.2 S
Modalità canale
Aumento
Tags
IXFH12N, IXFH12, IXFH1, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ment14 APAC
MOSFET,N CH,900V,12A,TO-247
***nell
MOSFET,N CH,900V,12A,TO-247; Transistor Polarity:N Channel; Current Id Max:12A; Drain Source Voltage Vds:900V; On State Resistance:900mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:30V; Power Dissipation:380W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3
900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descrizione Azione Prezzo
IXFH12N90P
DISTI # IXFH12N90P-ND		IXYS CorporationMOSFET N-CH 900V 12A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$6.1560
IXFH12N90P
DISTI # 83R9967		IXYS CorporationN CHANNEL POLAR POWER MOSFET, HiPerFET, 900V, 12A, TO247,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:900V,On Resistance Rds(on):0.9ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:3Pins RoHS Compliant: Yes30
  • 1:$8.7800
  • 10:$7.8500
  • 25:$6.8300
  • 50:$6.6900
  • 100:$6.4400
  • 250:$5.5000
  • 500:$5.2100
IXFH12N90P
DISTI # 747-IXFH12N90P		IXYS CorporationMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
RoHS: Compliant		55
  • 1:$8.7800
  • 10:$7.8500
  • 25:$6.8300
  • 50:$6.6900
  • 100:$6.4400
  • 250:$5.5000
  • 500:$5.2100
  • 1000:$4.4000
IXFH12N90P
DISTI # 1829759		IXYS CorporationMOSFET,N CH,900V,12A,TO-247
RoHS: Compliant		30
  • 1:£7.5500
  • 5:£6.9700
  • 10:£5.0100
IXFH12N90P
DISTI # 1829759		IXYS CorporationMOSFET,N CH,900V,12A,TO-247
RoHS: Compliant		30
  • 1:$13.9000
  • 10:$12.4300
  • 25:$10.8100
  • 50:$10.5900
  • 100:$10.2000
  • 250:$8.7100
  • 500:$8.2500
  • 1000:$6.9700
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Disponibilità
Azione:
Available
Su ordine:
4500
Inserisci la quantità:
Il prezzo attuale di IXFH12N90P è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
6,60 USD
6,60 USD
10
6,27 USD
62,70 USD
100
5,94 USD
594,00 USD
500
5,61 USD
2 805,00 USD
1000
5,28 USD
5 280,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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