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IXFH14N60P

IXFH14N60P
Mfr. #:
IXFH14N60P
Produttore:
Littelfuse
Descrizione:
Darlington Transistors MOSFET 600V 14A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFH14N60P Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IXFH14N60P maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
IXFH14N60
Confezione
Tubo
Unità di peso
0.229281 oz
Stile di montaggio
Foro passante
Nome depositato
HyperFET
Pacchetto-Custodia
TO-247-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
300 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
26 ns
Ora di alzarsi
27 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuo-Scarico-Corrente
14 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Resistenza
550 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
70 ns
Tempo di ritardo all'accensione tipico
23 ns
Transconduttanza diretta-Min
13 S
Modalità canale
Aumento
Tags
IXFH14N6, IXFH14N, IXFH14, IXFH1, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***inecomponents.com
Trans MOSFET N-CH 600V 14A 3-Pin (3+Tab) TO-247
***ment14 APAC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:600V; On Resistance Rds(on):550mohm; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:300W; Transistor Case Style:TO-247; No. of Pins:3; Capacitance Ciss Typ:2300pF; Junction to Case Thermal Resistance A:0.42°C/W; N-channel Gate Charge:38nC; Package / Case:TO-247; Power Dissipation Pd:300W; Reverse Recovery Time trr Max:200ns; Termination Type:Through Hole; Transistor Type:High Performance FET; Voltage Vds Typ:600V; Voltage Vgs Rds on Measurement:10V
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descrizione Azione Prezzo
IXFH14N60P
DISTI # IXFH14N60P-ND		IXYS CorporationMOSFET N-CH 600V 14A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$3.6383
IXFH14N60P3
DISTI # IXFH14N60P3-ND		IXYS CorporationMOSFET N-CH 600V 14A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$3.4157
IXFH14N60P
DISTI # 747-IXFH14N60P		IXYS CorporationMOSFET 600V 14A
RoHS: Compliant		70
  • 1:$4.7300
  • 10:$4.2300
  • 25:$3.6800
  • 50:$3.6000
  • 100:$3.4700
  • 250:$2.9600
  • 500:$2.8100
  • 1000:$2.3700
  • 2500:$2.0300
IXFH14N60P3
DISTI # 747-IXFH14N60P3		IXYS CorporationMOSFET Polar3 HiPerFETs Power MOSFETs24
  • 1:$4.4400
  • 10:$3.9700
  • 25:$3.4500
  • 50:$3.3800
  • 100:$3.2500
  • 250:$2.7800
  • 500:$2.6400
  • 1000:$2.2200
  • 2500:$1.9100
IXFH14N60P
DISTI # 194063P		IXYS CorporationMOSFET N-CHANNEL 600V 14A TO247, TU23
  • 5:£2.3400
  • 20:£2.1600
  • 50:£2.0000
  • 100:£1.8600
IXFH14N60P3
DISTI # 8024350P		IXYS CorporationMOSFET N 600V 14A POLAR3 HIPERFET TO247, TU82
  • 20:£2.3300
  • 40:£2.1800
  • 100:£2.0300
  • 500:£1.7250
IXFH14N60PIXYS CorporationINSTOCK126
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    Mfr.#: IXFH10N80P

    OMO.#: OMO-IXFH10N80P-IXYS-CORPORATION

    		 IGBT Transistors MOSFET 10 Amps 800V 1.1 Rds
    Disponibilità
    Azione:
    Available
    Su ordine:
    2000
    Inserisci la quantità:
    Il prezzo attuale di IXFH14N60P è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    3,04 USD
    3,04 USD
    10
    2,89 USD
    28,93 USD
    100
    2,74 USD
    274,05 USD
    500
    2,59 USD
    1 294,15 USD
    1000
    2,44 USD
    2 436,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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