IRF9333TRPBF

Mfr. #:: IRF9333TRPBF
Produttore:: Infineon / IR
Descrizione:: MOSFET MOSFT P-Ch -30V -9.2A 19.4mOhm
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IRF9333TRPBF Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRF9333TRPBF Datasheet IRF9333TRPBF Datasheet (P4-P6)IRF9333TRPBF Datasheet (P7-P8)
ECAD Model:
Maggiori informazioni:: IRF9333TRPBF maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Infineon

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: SO-8

Polarità del transistor:: Canale P

Vds - Tensione di rottura Drain-Source:: 30 V

Id - Corrente di scarico continua:: 9.2 A

Rds On - Resistenza Drain-Source:: 32.5 mOhms

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 14 nC

Pd - Dissipazione di potenza:: 2.5 W

Confezione:: Bobina

Altezza:: 1.75 mm

Lunghezza:: 4.9 mm

Larghezza:: 3.9 mm

Marca:: Infineon / IR

Tipologia di prodotto:: MOSFET

Quantità confezione di fabbrica:: 4000

sottocategoria:: MOSFET

Parte # Alias:: SP001560120

Unità di peso:: 0.019048 oz

Tags: IRF933, IRF93, IRF9, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF9333TRPBF Descrizione

***ark: Mosfet Transistor, P Channel, -9.2 A, -30 V, 15.6 Mohm, -10 V, -1.8 V

***(Formerly Allied Electronics): IRF9333PBF P-channel MOSFET Transistor; 9.2 A; 30 V; 8-Pin SOIC

***roFlash: Single P-Channel 30 V 32.5 mOhm 14 nC HEXFET¬Æ Power Mosfet - SOIC-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ineon: Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

***ure Electronics: N-Channel 30 V 14 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 10.2A, 14mΩ

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ineon: Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

*** Stop Electro: Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ark: Mosfet Transistor, N Channel, 11 A, 30 V, 13.8 Mohm, 10 V, 1.8 V

***ure Electronics: Single N-Channel 30 V 18.2 mOhm 11 nC HEXFET® Power Mosfet - SOIC-8

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0138ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissi

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 13.8 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 6.2 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 6.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

***(Formerly Allied Electronics): MOSFET, Power,P-Ch,VDSS -30V,RDS(ON) 0.015Ohm,ID -7A,SO-8,PD 1.5W,VGS+/-20V,-55C

***ure Electronics: Si4435DDY Series 30 V 0.024 Ohm Surface Mount P-Channel Mosfet - SOIC-8

***enic: 30V 11.4A 2.5W 24m´Î@10V9.1A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS

***el Electronic: MICROCHIP - 24AA025E48-I/SN - EEPROM, einzigartige EUI-48™-Node-Adresse, 2 Kbit, 2 Blöcke (128 x 8 Bit), Seriell I2C (2-Draht)

***ark: P Channel Mosfet,-30V,-8.1A, Soic-8; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; On Resistance Rds(On):0.0195Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No

***Yang: Trans MOSFET N-CH 30V 11.6A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled

***ure Electronics: N-Channel 30 V 10 mO Surface Mount PowerTrench® Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ

***et Europe: Trans MOSFET N-CH 30V 11.6A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET, N CH, 30V, 11.6A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11.6A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

IRF9333TRPBF Maggiori informazioni

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IRF9333TRPBF DISTI # V72:2272_13890111	Infineon Technologies AG	Trans MOSFET P-CH 30V 9.2A 8-Pin SOIC N T/R RoHS: Compliant	7601	6000:$0.2308 3000:$0.2646 1000:$0.2652 500:$0.3160 250:$0.3169 100:$0.3179 25:$0.4389 10:$0.4390 1:$0.5067
IRF9333TRPBF DISTI # IRF9333TRPBFCT-ND	Infineon Technologies AG	MOSFET P-CH 30V 9.2A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	10980In Stock	1000:$0.3716 500:$0.4554 100:$0.6021 10:$0.7700 1:$0.8800
IRF9333TRPBF DISTI # IRF9333TRPBFDKR-ND	Infineon Technologies AG	MOSFET P-CH 30V 9.2A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	10980In Stock	1000:$0.3716 500:$0.4554 100:$0.6021 10:$0.7700 1:$0.8800
IRF9333TRPBF DISTI # IRF9333TRPBFTR-ND	Infineon Technologies AG	MOSFET P-CH 30V 9.2A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	8000In Stock	4000:$0.3302
IRF9333TRPBF DISTI # 27540004	Infineon Technologies AG	Trans MOSFET P-CH 30V 9.2A 8-Pin SOIC N T/R RoHS: Compliant	7601	6000:$0.2308 3000:$0.2646 1000:$0.2652 500:$0.3160 250:$0.3169 100:$0.3179 34:$0.4389
IRF9333TRPBF DISTI # IRF9333TRPBF	Infineon Technologies AG	Trans MOSFET P-CH 30V 9.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: IRF9333TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.2619 8000:$0.2519 16000:$0.2429 24000:$0.2349 40000:$0.2309
IRF9333TRPBF DISTI # IRF9333TRPBF	Infineon Technologies AG	Trans MOSFET P-CH 30V 9.2A 8-Pin SOIC N T/R (Alt: IRF9333TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0	4000:$0.2123 8000:$0.2036 12000:$0.2009 20000:$0.1930 40000:$0.1906 100000:$0.1858 200000:$0.1813
IRF9333TRPBF DISTI # SP001560120	Infineon Technologies AG	Trans MOSFET P-CH 30V 9.2A 8-Pin SOIC N T/R (Alt: SP001560120) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€0.2659 8000:€0.2179 16000:€0.1999 24000:€0.1839 40000:€0.1709
IRF9333TRPBF DISTI # 10AC7823	Infineon Technologies AG	MOSFET, P-CH, -30V, -9.2A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-9.2A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0156ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.8V,Power , RoHS Compliant: Yes	6773	1:$0.7330 10:$0.6090 25:$0.5420 50:$0.4750 100:$0.4080 250:$0.3830 500:$0.3600 1000:$0.3350
IRF9333TRPBF DISTI # 70019297	Infineon Technologies AG	IRF9333TRPBF P-channel MOSFET Transistor,9.2 A,30 V,8-Pin SOIC RoHS: Compliant	0	20:$0.6800
IRF9333TRPBF DISTI # 942-IRF9333TRPBF	Infineon Technologies AG	MOSFET MOSFT P-Ch -30V -9.2A 19.4mOhm RoHS: Compliant	3518	1:$0.7000 10:$0.5740 100:$0.3700 1000:$0.2960 4000:$0.2500 8000:$0.2410 24000:$0.2320
IRF9333TRPBF DISTI # 8273928P	Infineon Technologies AG	HEXFET P-CH MOSFET 9.2A 30V SOIC8, RL	20840	40:£0.3420 200:£0.2680 1000:£0.2150 2000:£0.2100
IRF9333TRPBF DISTI # TMOSP12056	Infineon Technologies AG	P-CH 30V 9,2A 19,4mOhm SO8 RoHS: Compliant	Stock DE - 4000Stock US - 0	4000:$0.3060 8000:$0.2885 12000:$0.2711 16000:$0.2450 28000:$0.2361
IRF9333TRPBF	Infineon Technologies AG	Trans MOSFET P-CH 30V 9.2A 8-Pin SOIC N T/R	16000
IRF9333TRPBF DISTI # XSLY00000000881	INFINEON/IR	SO-8 RoHS: Compliant	4000	4000:$0.2286
IRF9333TRPBF DISTI # 2696598	Infineon Technologies AG	MOSFET, P-CH, -30V, -9.2A, SOIC RoHS: Compliant	6773	1:$1.1100 10:$0.9090 100:$0.5860 1000:$0.4690 4000:$0.3960 8000:$0.3820 24000:$0.3680
IRF9333TRPBF. DISTI # 1830577	Infineon Technologies AG	P CHANNEL, MOSFET, -30V, -9.2A, SOIC RoHS: Compliant	0	1:$1.1100 10:$0.9090 100:$0.5860 1000:$0.4690 4000:$0.3960 8000:$0.3820 24000:$0.3680
IRF9333TRPBF DISTI # C1S322000487545	Infineon Technologies AG	MOSFETs	7601	250:$0.3170 100:$0.3179 25:$0.4390 10:$0.4391
IRF9333TRPBF DISTI # 2696598	Infineon Technologies AG	MOSFET, P-CH, -30V, -9.2A, SOIC RoHS: Compliant	6873	5:£0.4540 25:£0.3490 100:£0.2730 250:£0.2470 500:£0.2200

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Disponibilità

Azione:: Available
Su ordine:: 1987
Inserisci la quantità:

Il prezzo attuale di IRF9333TRPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,69 USD~~; ~~0,69 USD~~

10: ~~0,57 USD~~; ~~5,74 USD~~

100: ~~0,37 USD~~; ~~37,00 USD~~

1000: ~~0,30 USD~~; ~~296,00 USD~~

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IRF9333TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes