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MRFE6S9045NR1

MRFE6S9045NR1
Mfr. #:
MRFE6S9045NR1
Produttore:
NXP / Freescale
Descrizione:
RF MOSFET Transistors HV6E 45W NI270-2 FET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
MRFE6S9045NR1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
NXP
Categoria di prodotto:
Transistor MOSFET RF
RoHS:
E
Polarità del transistor:
Canale N
Tecnologia:
si
Vds - Tensione di rottura Drain-Source:
66 V
Temperatura di esercizio minima:
- 65 C
Temperatura massima di esercizio:
+ 150 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-270
Confezione:
Bobina
Configurazione:
Separare
Altezza:
2.08 mm
Lunghezza:
9.7 mm
Serie:
MRFE6S9045NR1
Tipo:
MOSFET di potenza RF
Larghezza:
6.15 mm
Marca:
NXP / Freescale
Modalità canale:
Aumento
Sensibile all'umidità:
sì
Tipologia di prodotto:
Transistor MOSFET RF
Quantità confezione di fabbrica:
500
sottocategoria:
MOSFET
Vgs - Tensione Gate-Source:
- 0.5 V, 12 V
Parte # Alias:
935316813528
Unità di peso:
0.018679 oz
Tags
MRFE6S9045, MRFE6S904, MRFE6S90, MRFE6S9, MRFE6S, MRFE6, MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    H***d
    H***d
    DZ

    good

    2019-06-10
    F***n
    F***n
    FR

    Trés bien!

    2019-04-18
    P***E
    P***E
    FR

    Perfect

    2019-05-06
***escale Semiconductor
Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 10 W Avg., 28 V
***W
RF Power Transistor,865 to 960 MHz, 45 W, Typ Gain in dB is 22.1 @ 880 MHz, 28 V, LDMOS, SOT1732
***icontronic
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270
***ment14 APAC
RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF MOSFET; Drain Source Voltage Vds:66V; Operating Frequency Min:920MHz; Operating Frequency Max:960MHz; RF Transistor Case:TO-270; No. of Pins:2; Filter Terminals:Surface Mount
***ark
RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:66V; RF Transistor Case:TO-270; Gain:22.1dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:880MHz ;RoHS Compliant: Yes
***escale Semiconductor
Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 14 W Avg., 28 V
***W
RF Power Transistor,470 to 960 MHz, 60 W, Typ Gain in dB is 21.1 @ 880 MHz, 28 V, LDMOS, SOT1732
***nsix Microsemi
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270AA
***ark
RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:66V; RF Transistor Case:TO-270; Gain:21.1dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:880MHz ;RoHS Compliant: Yes
***nell
TRANSISTOR, RF, 66V, TO-270-2; Drain Source Voltage Vds: 66VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 470MHz; Operating Frequency Max: 960MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***W
RF Power Transistor,450 to 1500 MHz, 10 W, Typ Gain in dB is 18 @ 960 MHz, 28 V, LDMOS, SOT1732
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V, FM2F
***ment14 APAC
RF MOSFET, N CHANNEL, 68V, TO-270; Drain Source Voltage Vds:68V; RF Transistor Case:TO-270; MSL:MSL 3 - 168 hours; Termination Type:SMD; Gain:18dB; Peak Reflow Compatible (260 C):Yes; Transistor Polarity:N Channel
***ark
RF MOSFET, N CHANNEL, 68V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:68V; RF Transistor Case:TO-270; Gain:18dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:900MHz ;RoHS Compliant: Yes
***W
RF Power Transistor,1600 to 2200 MHz, 10 W, Typ Gain in dB is 15.5 @ 2170 MHz, 28 V, LDMOS, SOT1731
*** Semiconductors SCT
GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V, FM2
***et
Transistor RF FET N-CH 68V 1600MHz to 2200MHz 3-Pin TO-270G T/R
***ure Electronics
MRF6S20010 Series 28 V 2170 MHz RF Power Field Effect Transistor - TO-270G-2
***p One Stop Global
Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R
***nsix Microsemi
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA
***i-Key
MOSFET RF N-CH 28V 10W TO2702 GW
*** Electronic Components
RF MOSFET Transistors HV6 2GHZ 10W
***or
RF MOSFET LDMOS 28V TO270-2 GULL
***ment14 APAC
RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G
***i-Key Marketplace
RF S BAND, N-CHANNEL POWER MOSFE
***nell
RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G; Drain Source Voltage Vds: 68V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 2.2GHz; Operating Frequency Max: 1.6GHz; RF Transistor Case: TO-270G; No. of
***W
RF Power Transistor,1600 to 2200 MHz, 10 W, Typ Gain in dB is 15.5 @ 2170 MHz, 28 V, LDMOS, SOT1732
*** Semiconductors SCT
GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V, ,
***et
Transistor RF FET N-CH 68V 1600MHz to 2200MHz 3-Pin TO-270 T/R
***icontronic
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270AA
***ponent Stockers USA
S BAND Si N-CHANNEL RF POWER MOSFET TO-270AA
*** Electronic Components
RF MOSFET Transistors HV6 2GHZ 10W TO270-2
***escale Semiconductor
Single W-CDMA Lateral N-Channel RF Power MOSFET, 2300-2700 MHz, 3 W Avg., 28 V
***et
Transistor RF FET N-CH 68V 2300MHz to 2700MHz 3-Pin TO-270 T/R
*** Electronic Components
RF MOSFET Transistors HV6 2.7GHZ 15W
***S
French Electronic Distributor since 1988
***i-Key Marketplace
RF S BAND, N-CHANNEL , TO-270AA
***W
RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
***nell
TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
Parte # Mfg. Descrizione Azione Prezzo
MRFE6S9045NR1
DISTI # V72:2272_07204216		NXP SemiconductorsTrans RF MOSFET N-CH 66V 3-Pin TO-270 T/R
RoHS: Compliant		55
  • 25:$24.0700
  • 10:$27.1300
  • 1:$29.5800
MRFE6S9045NR1
DISTI # MRFE6S9045NR1CT-ND		NXP SemiconductorsFET RF 66V 880MHZ TO-270-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		721In Stock
  • 100:$23.9244
  • 10:$28.0170
  • 1:$30.3800
MRFE6S9045NR1
DISTI # MRFE6S9045NR1DKR-ND		NXP SemiconductorsFET RF 66V 880MHZ TO-270-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		721In Stock
  • 100:$23.9244
  • 10:$28.0170
  • 1:$30.3800
MRFE6S9045NR1
DISTI # MRFE6S9045NR1TR-ND		NXP SemiconductorsFET RF 66V 880MHZ TO-270-2
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)		Limited Supply - Call
  • 500:$21.0882
MRFE6S9045NR1
DISTI # 25767380		NXP SemiconductorsTrans RF MOSFET N-CH 66V 3-Pin TO-270 T/R
RoHS: Compliant		55
  • 25:$24.0700
  • 10:$27.1300
  • 1:$29.5800
MRFE6S9045NR1
DISTI # MRFE6S9045NR1		Avnet, Inc.Trans MOSFET N-CH 66V 3-Pin TO-270 T/R - Tape and Reel (Alt: MRFE6S9045NR1)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$22.1900
  • 1000:$21.3900
  • 2000:$20.4900
  • 3000:$19.7900
  • 5000:$19.3900
MRFE6S9045NR1
DISTI # MRFE6S9045NR1		Avnet, Inc.Trans MOSFET N-CH 66V 3-Pin TO-270 T/R (Alt: MRFE6S9045NR1)
RoHS: Compliant
Min Qty: 500
Container: Tape and Reel		Asia - 0
  • 500:$21.8304
  • 1000:$21.2240
  • 1500:$20.6504
  • 2500:$20.1070
  • 5000:$19.8458
  • 12500:$19.5914
  • 25000:$19.1016
MRFE6S9045NR1
DISTI # 31AC6668		NXP SemiconductorsTRANSISTOR, RF, 66V, TO-270-2,Drain Source Voltage Vds:66VDC,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:865MHz,Operating Frequency Max:960MHz,RF Transistor Case:TO-270,No. of Pins:2Pins,RoHS Compliant: Yes345
  • 1:$30.3800
  • 10:$28.0200
  • 25:$24.4500
  • 50:$24.1900
  • 100:$23.9300
  • 250:$22.9300
MRFE6S9045NR1
DISTI # 54M7235		NXP SemiconductorsRF MOSFET, N CHANNEL, 66V, TO-270,Drain Source Voltage Vds:66V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:920MHz,Operating Frequency Max:960MHz,RF Transistor Case:TO-270,No. of Pins:2Pins RoHS Compliant: Yes0
  • 1:$30.5700
MRFE6S9045NR1
DISTI # 841-MRFE6S9045NR1		NXP SemiconductorsRF MOSFET Transistors HV6E 45W NI270-2 FET
RoHS: Compliant		509
  • 1:$30.3800
  • 5:$29.0400
  • 10:$28.0200
  • 25:$24.4500
  • 100:$23.9300
  • 250:$22.9300
  • 500:$21.0900
MRFE6S9045NR1Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270
RoHS: Compliant		267
  • 1000:$20.1100
  • 500:$21.1600
  • 100:$22.0300
  • 25:$22.9800
  • 1:$24.7500
MRFE6S9045NR1
DISTI # MRFE6S9045NR1		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 1:$33.1600
  • 10:$29.9800
  • 25:$28.3400
MRFE6S9045NR1
DISTI # 2776257		NXP SemiconductorsTRANSISTOR, RF, 66V, TO-270-2
RoHS: Compliant		345
  • 1:$46.0400
  • 5:$44.1200
  • 10:$40.7300
  • 50:$38.5100
  • 100:$36.5200
MRFE6S9045NR1
DISTI # C1S233100192207		NXP SemiconductorsTrans RF MOSFET N-CH 66V 3-Pin TO-270 T/R
RoHS: Compliant		55
  • 25:$24.0600
  • 10:$27.1300
  • 1:$29.5900
MRFE6S9045NR1
DISTI # 2776257		NXP SemiconductorsTRANSISTOR, RF, 66V, TO-270-2
RoHS: Compliant		345
  • 1:£23.2100
  • 5:£22.1900
  • 10:£18.6700
  • 50:£18.1000
  • 100:£17.5200
Immagine Parte # Descrizione
AD8031ARTZ-REEL7

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OMO.#: OMO-AD8031ARTZ-REEL7

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OMO.#: OMO-MC79L05ABDG

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 Programmable Logic IC Development Tools DE10-Nano Dev Kit w/ US power adapter
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Mfr.#: AD8031ARTZ-REEL7

OMO.#: OMO-AD8031ARTZ-REEL7-ANALOG-DEVICES-INC-ADI

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Mfr.#: TCAN330DCNR

OMO.#: OMO-TCAN330DCNR-TEXAS-INSTRUMENTS

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MC79L05ABDG

Mfr.#: MC79L05ABDG

OMO.#: OMO-MC79L05ABDG-ON-SEMICONDUCTOR

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C3216JB1H106K160AB

Mfr.#: C3216JB1H106K160AB

OMO.#: OMO-C3216JB1H106K160AB-TDK

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 10uF 50volts JB 10%
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Mfr.#: A02TGLB

OMO.#: OMO-A02TGLB-1190

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 Conn Unshrouded Header HDR 10 POS 1.27mm Solder ST SMD Tube
Disponibilità
Azione:
100
Su ordine:
2083
Inserisci la quantità:
Il prezzo attuale di MRFE6S9045NR1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
30,38 USD
30,38 USD
5
29,04 USD
145,20 USD
10
28,02 USD
280,20 USD
25
24,45 USD
611,25 USD
100
23,93 USD
2 393,00 USD
250
22,93 USD
5 732,50 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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