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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| FMV16N60ES DISTI # FE0000000001084 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 16A I(D),600V,0.47ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB RoHS: Compliant | 0 in Stock0 on Order | |
| FMV16N60ESSC-P DISTI # FE0000000004764 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV16N60E-S25PP-P DISTI # FE0000000004762 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV16N60ES-S25PP-P DISTI # FE0000000004763 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: FMV16N60E OMO.#: OMO-FMV16N60E-1190 |
Power Field-Effect Transistor, 16A I(D),600V,0.47ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |
|
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Mfr.#: FMV16N60E,16N60E OMO.#: OMO-FMV16N60E-16N60E-1190 |
Nuovo e originale |
|
|
Mfr.#: FMV16N60E-S25PP OMO.#: OMO-FMV16N60E-S25PP-1190 |
Nuovo e originale |
|
|
Mfr.#: FMV16N60ES OMO.#: OMO-FMV16N60ES-1190 |
Power Field-Effect Transistor, 16A I(D),600V,0.47ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |
|
|
Mfr.#: FMV16N60ESC-P OMO.#: OMO-FMV16N60ESC-P-1190 |
Nuovo e originale |
|
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Mfr.#: FMV16N60G OMO.#: OMO-FMV16N60G-1190 |
Nuovo e originale |