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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| FMV16N60E DISTI # FE0000000001083 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 16A I(D),600V,0.47ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB RoHS: Compliant | 0 in Stock0 on Order | |
| FMV16N60E-S25PP-P DISTI # FE0000000004762 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV16N60E-P DISTI # FE0000000004761 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV16N60ESSC-P DISTI # FE0000000004764 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV16N60ES-S25PP-P DISTI # FE0000000004763 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV16N60ES DISTI # FE0000000001084 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 16A I(D),600V,0.47ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB RoHS: Compliant | 0 in Stock0 on Order | |
| FMV16N60E | ISC | TO-220F | 5000 | |
| FMV16N60ES | ISC | TO-220F | 5000 |
| Immagine | Parte # | Descrizione |
|---|---|---|
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Mfr.#: FMV10N80E OMO.#: OMO-FMV10N80E-1190 |
IC, MOSFET, N-Channel, FAP-E3 Planar, 800V, 10A, 235W, TO-220AB |
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Mfr.#: FMV10N80E,10N80E, OMO.#: OMO-FMV10N80E-10N80E--1190 |
Nuovo e originale |
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Mfr.#: FMV10N80E,FMV11N60E,FMV1 |
Nuovo e originale |
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Mfr.#: FMV11N60EHF OMO.#: OMO-FMV11N60EHF-1190 |
Nuovo e originale |
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Mfr.#: FMV11N60ES FMV11N60E |
Nuovo e originale |
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Mfr.#: FMV12N50E,FMV16N60E,16N6 |
Nuovo e originale |
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Mfr.#: FMV12N50ES OMO.#: OMO-FMV12N50ES-1190 |
Power Field-Effect Transistor, 12A I(D),500V,0.5ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |
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Mfr.#: FMV16N50ES,FMV16N50E,16N |
Nuovo e originale |
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Mfr.#: FMV16N60E OMO.#: OMO-FMV16N60E-1190 |
Power Field-Effect Transistor, 16A I(D),600V,0.47ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |
|
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Mfr.#: FMV19N57ES OMO.#: OMO-FMV19N57ES-1190 |
Nuovo e originale |