SI4401BDY-T1-GE3

SI4401BDY-T1-GE3
Mfr. #:
SI4401BDY-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 40V 10.5A 2.9W 14mohm @ 10V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI4401BDY-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4401BDY-T1-GE3 DatasheetSI4401BDY-T1-GE3 Datasheet (P4-P6)SI4401BDY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Maggiori informazioni:
SI4401BDY-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SO-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale P
Id - Corrente di scarico continua:
10.5 A
Rds On - Resistenza Drain-Source:
14 mOhms
Vgs th - Tensione di soglia gate-source:
1 V
Vgs - Tensione Gate-Source:
10 V
Qg - Carica cancello:
40 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
2.9 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
TrenchFET
Confezione:
Bobina
Serie:
SI4
Tipo di transistor:
1 P-Channel
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
26 S
Tempo di caduta:
47 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
15 ns
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
97 ns
Tempo di ritardo di accensione tipico:
16 ns
Parte # Alias:
SI4401BDY-GE3
Unità di peso:
0.006596 oz
Tags
SI4401BDY-T, SI4401BDY, SI4401B, Si4401, Si440, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nell
P CHANNEL MOSFET, -40V, 10.5A, SOIC, FULL REEL
***ponent Sense
power mosfet 40V 20V-TRANSISTOR FET N-CH
***et
Trans MOSFET P-CH 40V 8.7A 8-Pin SOIC N T/R
***ark
P Channel Mosfet, -40V, 10.5A, Soic, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:10.5A; On Resistance Rds(On):0.011Ohm; Transistor Mounting:surface Mount; No. Of Pins:8Pins Rohs Compliant: No
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descrizione Azione Prezzo
SI4401BDY-T1-GE3
DISTI # V72:2272_09216469
Vishay IntertechnologiesTrans MOSFET P-CH 40V 8.7A 8-Pin SOIC N T/R
RoHS: Compliant
1394
  • 2501:$0.7524
  • 1:$0.7800
  • 1000:$0.7893
  • 500:$0.9092
  • 250:$1.0597
  • 100:$1.0608
  • 25:$1.1718
  • 10:$1.3020
SI4401BDY-T1-GE3
DISTI # SI4401BDY-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 40V 8.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
13In Stock
  • 1000:$0.8525
  • 500:$1.0289
  • 100:$1.3228
  • 10:$1.6460
  • 1:$1.8200
SI4401BDY-T1-GE3
DISTI # SI4401BDY-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 40V 8.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
13In Stock
  • 1000:$0.8525
  • 500:$1.0289
  • 100:$1.3228
  • 10:$1.6460
  • 1:$1.8200
SI4401BDY-T1-GE3
DISTI # SI4401BDY-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 40V 8.7A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
On Order
  • 2500:$0.7706
SI4401BDY-T1-GE3
DISTI # 31589380
Vishay IntertechnologiesTrans MOSFET P-CH 40V 8.7A 8-Pin SOIC N T/R
RoHS: Compliant
1394
  • 1000:$0.7893
  • 500:$0.9112
  • 250:$1.0597
  • 100:$1.0607
  • 25:$1.1718
  • 10:$1.3020
  • 8:$1.5750
SI4401BDY-T1-GE3
DISTI # 31056011
Vishay IntertechnologiesTrans MOSFET P-CH 40V 8.7A 8-Pin SOIC N T/R
RoHS: Compliant
158
  • 128:$1.3898
  • 32:$1.5555
  • 16:$1.9125
  • 8:$2.3205
  • 7:$3.7357
SI4401BDY-T1-GE3
DISTI # SI4401BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 40V 8.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4401BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.7769
  • 5000:$0.7749
  • 10000:$0.7719
  • 15000:$0.7699
  • 25000:$0.7669
SI4401BDY-T1-GE3
DISTI # SI4401BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 40V 8.7A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: SI4401BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape
Americas - 0
  • 1:$1.3619
  • 25:$1.1359
  • 62:$1.0929
  • 125:$1.0279
  • 312:$0.9699
  • 625:$0.9239
  • 1250:$0.9199
SI4401BDY-T1-GE3
DISTI # 69W7197
Vishay IntertechnologiesMOSFET, P CHANNEL, -40V, -8.7A, SOIC-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-8.7A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.011ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V RoHS Compliant: Yes0
  • 500:$1.0700
  • 250:$1.1500
  • 100:$1.2300
  • 50:$1.3500
  • 25:$1.4600
  • 10:$1.5800
  • 1:$1.9000
SI4401BDY-T1-GE3
DISTI # 97W2650
Vishay IntertechnologiesMOSFET Transistor, P Channel, -8.7 A, -40 V, 0.011 ohm, -4.5 V, -3 V RoHS Compliant: Yes0
    SI4401BDY-T1-GE3
    DISTI # 16P3734
    Vishay IntertechnologiesP CHANNEL MOSFET, -40V, 10.5A, SOIC, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-10.5A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.011ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:-3VRoHS Compliant: Yes0
    • 5000:$0.7950
    • 2500:$0.8110
    • 1:$0.8260
    SI4401BDY-T1-GE3.
    DISTI # 30AC0156
    Vishay IntertechnologiesP CHANNEL MOSFET, -40V, 10.5A, SOIC, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-10.5A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.011ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:-3VRoHS Compliant: No0
    • 5000:$0.7950
    • 2500:$0.8110
    • 1:$0.8260
    SI4401BDY-T1-GE3
    DISTI # 781-SI4401BDY-T1-GE3
    Vishay IntertechnologiesMOSFET 40V 10.5A 2.9W 14mohm @ 10V
    RoHS: Compliant
    4811
    • 1:$1.9000
    • 10:$1.5800
    • 100:$1.2300
    • 500:$1.0700
    • 1000:$0.8870
    • 2500:$0.8260
    • 5000:$0.7950
    SI4401BDY-T1-GE3
    DISTI # 2335308
    Vishay IntertechnologiesMOSFET, P CH, -40V, -8.7A, SOIC
    RoHS: Compliant
    651
    • 1000:$1.3800
    • 500:$1.6400
    • 100:$2.1100
    • 10:$2.6300
    • 1:$2.9000
    SI4401BDY-T1-GE3.
    DISTI # 2300538
    Vishay IntertechnologiesP CHANNEL MOSFET, -40V, 10.5A, SOIC
    RoHS: Compliant
    0
    • 7500:$1.8300
    • 5000:$2.2700
    • 2500:$2.9600
    SI4401BDY-T1-GE3
    DISTI # C1S803604222850
    Vishay IntertechnologiesTrans MOSFET P-CH 40V 8.7A 8-Pin SOIC N T/R
    RoHS: Compliant
    158
    • 128:$1.0900
    • 32:$1.2200
    • 16:$1.5000
    • 8:$1.8200
    • 1:$2.9300
    SI4401BDY-T1-GE3.
    DISTI # 2300538
    Vishay IntertechnologiesP CHANNEL MOSFET, -40V, 10.5A, SOIC
    RoHS: Compliant
    0
    • 2500:£0.7250
    SI4401BDY-T1-GE3Vishay IntertechnologiesMOSFET 40V 10.5A 2.9W 14mohm @ 10V
    RoHS: Compliant
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      Thick Film Resistors - SMD 0603 10.0ohms 1% AEC-Q200
      HSMS-C280

      Mfr.#: HSMS-C280

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      Mfr.#: ADS1282HIPW

      OMO.#: OMO-ADS1282HIPW-TEXAS-INSTRUMENTS

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      GRT31CR61H106ME01L

      Mfr.#: GRT31CR61H106ME01L

      OMO.#: OMO-GRT31CR61H106ME01L-MURATA-ELECTRONICS

      Cap Ceramic 10uF 50V X5R 20% Pad SMD 1206 85C Automotive T/R
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      Disponibilità
      Azione:
      Available
      Su ordine:
      1987
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      550,00 USD
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      0,91 USD
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