BSM180D12P2C101

BSM180D12P2C101
Mfr. #:
BSM180D12P2C101
Produttore:
Rohm Semiconductor
Descrizione:
Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSM180D12P2C101 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
BSM180D12P2C101 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Semiconduttore Rohm
categoria di prodotto
FET - Array
Serie
BSM180D12P2C101
Prodotto
Moduli a semiconduttore di potenza
Tipo
Modulo di alimentazione SiC
Confezione
Massa
Stile di montaggio
Vite
Intervallo operativo di temperatura
- 40 C to + 150 C
Pacchetto-Custodia
Modulo
Temperatura di esercizio
-40°C ~ 150°C (TJ)
Tipo di montaggio
*
Pacchetto-dispositivo-fornitore
Modulo
Configurazione
Mezzo ponte
Tipo FET
2 N-Channel (Half Bridge)
Potenza-Max
1130W
Drain-to-Source-Voltage-Vdss
1200V (1.2kV)
Ingresso-Capacità-Ciss-Vds
23000pF @ 10V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
180A
Rds-On-Max-Id-Vgs
-
Vgs-th-Max-Id
4V @ 35.2mA
Gate-Carica-Qg-Vgs
-
Tags
BSM180D, BSM180, BSM18, BSM1, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
Parte # Mfg. Descrizione Azione Prezzo
BSM180D12P2C101
DISTI # BSM180D12P2C101-ND
ROHM SemiconductorMOSFET 2N-CH 1200V 180A MODULE
RoHS: Compliant
Min Qty: 1
Container: Bulk
On Order
  • 10:$418.8610
  • 1:$434.9700
BSM180D12P2C101
DISTI # BSM180D12P2C101
ROHM SemiconductorTrans SiC MOSFET N-CH 1.2KV 180A 10-Pin Case C Tray - Bulk (Alt: BSM180D12P2C101)
RoHS: Compliant
Min Qty: 12
Container: Bulk
Americas - 3
  • 12:$463.3900
  • 24:$434.4900
  • 48:$408.9900
  • 72:$386.3900
  • 120:$375.9900
BSM180D12P2C101
DISTI # 755-BSM180D12P2C101
ROHM SemiconductorDiscrete Semiconductor Modules Mod: 1200V 180A (no Diode)
RoHS: Compliant
0
  • 1:$434.9700
  • 5:$418.8700
BSM180D12P2C101
DISTI # 2345471
ROHM SemiconductorMODULE, POWER, SIC, 1200V, 180A
RoHS: Compliant
1
  • 1:£379.0000
Immagine Parte # Descrizione
BSM180D12P3C007

Mfr.#: BSM180D12P3C007

OMO.#: OMO-BSM180D12P3C007

Discrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD
BSM180D12P2C101

Mfr.#: BSM180D12P2C101

OMO.#: OMO-BSM180D12P2C101

Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)
BSM180D12P3C007

Mfr.#: BSM180D12P3C007

OMO.#: OMO-BSM180D12P3C007-ROHM-SEMI

SIC POWER MODULE
BSM180D12P3C007 , TDZTR6

Mfr.#: BSM180D12P3C007 , TDZTR6

OMO.#: OMO-BSM180D12P3C007-TDZTR6-1190

Nuovo e originale
BSM180D12P2E002

Mfr.#: BSM180D12P2E002

OMO.#: OMO-BSM180D12P2E002-1190

IPM Intelligent Power Module SIC-DMOSFET/SIC-SBD 204A 2500V 11-Pin Tray (Alt: BSM180D12P2E002)
BSM180D12P2C101

Mfr.#: BSM180D12P2C101

OMO.#: OMO-BSM180D12P2C101-ROHM-SEMI

Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)
Disponibilità
Azione:
Available
Su ordine:
3500
Inserisci la quantità:
Il prezzo attuale di BSM180D12P2C101 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
563,98 USD
563,98 USD
10
535,79 USD
5 357,86 USD
100
507,59 USD
50 758,65 USD
500
479,39 USD
239 693,65 USD
1000
451,19 USD
451 188,00 USD
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