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FFSP0865A

FFSP0865A
Mfr. #:
FFSP0865A
Produttore:
ON Semiconductor
Descrizione:
Schottky Diodes & Rectifiers SIC TO220 SBD 8A 650V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FFSP0865A Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FFSP0865A DatasheetFFSP0865A Datasheet (P4-P6)
ECAD Model:
Maggiori informazioni:
FFSP0865A maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Diodi e raddrizzatori Schottky
RoHS:
Y
Prodotto:
Diodi Schottky al carburo di silicio
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-2L
Se - Corrente diretta:
8 A
Vrrm - Tensione inversa ripetitiva:
650 V
Vf - Tensione diretta:
1.5 V
Ifsm - Corrente diretta in avanti:
49 A
Configurazione:
Separare
Tecnologia:
SiC
Ir - Corrente inversa:
200 uA
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Confezione:
Tubo
Marca:
ON Semiconductor
Pd - Dissipazione di potenza:
98 W
Tipologia di prodotto:
Diodi e raddrizzatori Schottky
Quantità confezione di fabbrica:
800
sottocategoria:
Diodi e raddrizzatori
Tags
FFSP0, FFSP, FFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Silicon Carbide Schottky Diode 650V 8A 2-Pin TO-220 Through Hole T/R
***ure Electronics
FFSP0865A Series 650 V 8 A Through Hole Silicon Carbide Schottky Diode -TO-220-2
***Components
In a Pack of 5, SiC SiC Power Module, 2 + Tab-Pin TO-220 ON Semiconductor FFSP0865A
***ical
Diode Schottky SiC 650V 13A 2-Pin(2+Tab) TO-220 Tube
***Semiconductor
SiC Diode - 650V, 8A, TO-220-2
***i-Key
DIODE SCHOTTKY 650V 13A TO220-2
***an P&S
650V,8A,Silicon Carbide Schottky Diode
***ark
Sic Schottky Diode, 650V, 8A, To-220-2; Product Range:-; Diode Configuration:single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:8A; Total Capacitive Charge Qc:27Nc; Diode Case Style:to-220; No. Of Pins:2 Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. SIC SCHOTTKY DIODE, 650V, 8A, TO-220-2; Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:8A; Total Capacitive Charge Qc:27nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:Lead (27-Jun-2018)
***nell
DIODO SCHOTTKY SIC, 650V, 8A, TO-220-2; Gamma Prodotti:-; Configurazione Diodo:Singolo; Tensione Inversa Ripetitiva Vrrm Max:650V; Corrente Diretta Continua If:8A; Potenza Reattiva Capacitiva Qc:27nC; Modello Involucro Diodo:TO-220; Numero di Pin:2 Pin; Temperatura di Giunzione Tj Max:175°C; Standard di Qualifica Automotive:-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
FFSP SiC Schottky Diodes
ON Semiconductor FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Silicon Carbide Schottky Diodes
ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  ON Semiconductor offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.
Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
650V SiC Schottky Diodes
ON Semiconductor 650V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.
Parte # Mfg. Descrizione Azione Prezzo
FFSP0865A
DISTI # V99:2348_18845030		ON SemiconductorSilicon Carbide Schottky Diode848
  • 3200:$1.6900
  • 800:$1.9040
  • 100:$2.2519
  • 25:$2.6070
  • 10:$2.6770
  • 1:$3.4540
FFSP0865A
DISTI # FFSP0865AOS-ND		ON SemiconductorDIODE SCHOTTKY 650V 13A TO220-2
RoHS: Compliant
Min Qty: 1
Container: Tube		754In Stock
  • 3200:$1.6716
  • 800:$1.9820
  • 100:$2.3283
  • 25:$2.6864
  • 10:$2.8420
  • 1:$3.1600
FFSP0865A
DISTI # 28956312		ON SemiconductorSilicon Carbide Schottky Diode848
  • 4:$3.4540
FFSP0865A
DISTI # 31918361		ON SemiconductorSilicon Carbide Schottky Diode800
  • 800:$2.4844
FFSP0865A
DISTI # FFSP0865A		ON SemiconductorSilicon Carbide Schottky Diode 650V 8A 2-Pin TO-220 Through Hole T/R - Rail/Tube (Alt: FFSP0865A)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 1600:$1.4900
  • 3200:$1.4900
  • 4800:$1.4900
  • 8000:$1.4900
  • 800:$1.5900
FFSP0865A
DISTI # FFSP0865A		ON SemiconductorSilicon Carbide Schottky Diode 650V 8A 2-Pin TO-220 Through Hole T/R (Alt: FFSP0865A)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1000:€1.3900
  • 500:€1.4900
  • 50:€1.5900
  • 100:€1.5900
  • 25:€1.6900
  • 10:€1.7900
  • 1:€1.8900
FFSP0865A
DISTI # 48AC1684		ON SemiconductorSIC SCHOTTKY DIODE, 650V, 8A, TO-220-2,Product Range:-,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:650V,Continuous Forward Current If:8A,Total Capacitive Charge Qc:27nC,Diode Case Style:TO-220,No. of Pins:2 RoHS Compliant: Yes800
  • 500:$2.0100
  • 250:$2.2300
  • 100:$2.3500
  • 50:$2.4700
  • 25:$2.6000
  • 10:$2.7200
  • 1:$3.2000
FFSP0865AON SemiconductorFFSP0865A Series 650 V 8 A Through Hole Silicon Carbide Schottky Diode -TO-220-2
RoHS: Not Compliant		800Tube
  • 800:$1.5100
FFSP0865A
DISTI # 863-FFSP0865A		ON SemiconductorSchottky Diodes & Rectifiers SIC TO220 SBD 8A 650V
RoHS: Compliant		779
  • 1:$3.1700
  • 10:$2.6900
  • 100:$2.3300
  • 250:$2.2100
  • 500:$1.9900
  • 1000:$1.6800
  • 2500:$1.5900
  • 5000:$1.5300
FFSP0865A
DISTI # 1728787		ON SemiconductorMOSFET SIC TO220 8A 650V, TU795
  • 800:£2.7500
FFSP0865A
DISTI # 2835586		ON SemiconductorSIC SCHOTTKY DIODE, 650V, 8A, TO-220-2800
  • 500:£1.4500
  • 250:£1.6300
  • 100:£1.7000
  • 10:£1.9700
  • 1:£2.6100
FFSP0865A
DISTI # XSFP00000144593		Fairchild Semiconductor Corporation4 Quadrant Logic Level TRIAC, 800VV(DRM),1AI(T)RMS
RoHS: Compliant		1600 in Stock0 on Order
  • 1600:$2.0100
  • 800:$2.1600
FFSP0865A
DISTI # 2835586		ON SemiconductorSIC SCHOTTKY DIODE, 650V, 8A, TO-220-2
RoHS: Compliant		800
  • 1600:$2.5700
  • 800:$3.0300
  • 100:$3.5600
  • 10:$4.3500
  • 1:$4.8300
FFSP0865AON Semiconductor650V,8A,Silicon Carbide Schottky Diode8150
  • 1:$4.4700
  • 100:$2.8500
  • 500:$2.3500
  • 1000:$2.1600
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SCS308AMC

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 Schottky Diodes & Rectifiers SIC SBD 650V 8A 33W TO-220FM
VS-MBR2535CT-M3

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 Schottky Diodes & Rectifiers 35V 2 x 15A IF C.A. TO-220AB
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IDH04G65C5XKSA2

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 Schottky Diodes & Rectifiers SIC DIODES
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 DIODE SCHOTTKY 650V 4A TO220-2-1
VS-MBR20100CT-M3

Mfr.#: VS-MBR20100CT-M3

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 DIODE SCHOTTKY 100V 10A TO220AB
Disponibilità
Azione:
728
Su ordine:
2711
Inserisci la quantità:
Il prezzo attuale di FFSP0865A è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
3,17 USD
3,17 USD
10
2,69 USD
26,90 USD
100
2,33 USD
233,00 USD
250
2,21 USD
552,50 USD
500
1,99 USD
995,00 USD
1000
1,68 USD
1 680,00 USD
2500
1,59 USD
3 975,00 USD
5000
1,53 USD
7 650,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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