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IDH04G65C5XKSA2

IDH04G65C5XKSA2
Mfr. #:
IDH04G65C5XKSA2
Produttore:
Infineon Technologies
Descrizione:
Schottky Diodes & Rectifiers SIC DIODES
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IDH04G65C5XKSA2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IDH04G65C5XKSA2 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Diodi e raddrizzatori Schottky
RoHS:
Y
Prodotto:
Diodi Schottky al carburo di silicio
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-2
Se - Corrente diretta:
4 A
Vrrm - Tensione inversa ripetitiva:
650 V
Vf - Tensione diretta:
1.5 V
Ifsm - Corrente diretta in avanti:
38 A
Configurazione:
Separare
Tecnologia:
SiC
Ir - Corrente inversa:
0.2 uA
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Confezione:
Tubo
Marca:
Tecnologie Infineon
Pd - Dissipazione di potenza:
48 W
Tipologia di prodotto:
Diodi e raddrizzatori Schottky
Quantità confezione di fabbrica:
500
sottocategoria:
Diodi e raddrizzatori
Nome depositato:
CoolSiC
Vr - Tensione inversa:
650 V
Parte # Alias:
IDH04G65C5 SP001632402
Unità di peso:
0.070548 oz
Tags
IDH04G65C5, IDH04G65, IDH04G, IDH04, IDH0, IDH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
Rectifier Diode, Schottky, 1 Phase, 1 Element, 4A, 650V V(RRM), Silicon Carbide, TO-220AC
***ure Electronics
IDH04G65C5 Series 650 V 4 A Surface Mount Schottky Diode - PG-TO220-2-1
***nell
SIC SCHOTTKY DIODE, 650V, 4A, TO-220; Product Range: thinQ 5G 650V Series; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm Max: 650V; Continuous Forward Current If: 4A; Total Capacitive Charge Qc: 7nC; Diode Case Style: TO-220; No. of Pins: 2 Pin; Junction Temperature Tj Max: 175°C; Automotive Qualification Standard: -; SVHC: No SVHC (27-Jun-2018); Forward Current If(AV): 4A; Forward Surge Current Ifsm Max: 38A; Forward Voltage VF Max: 1.7V; No. of Pins: 2Pins; Operating Temperature Max: 175°C; Semiconductor Technology: SiC
***ineon
CoolSiC generation 5 represents Infineons leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). | Summary of Features: V br at 650V; Improved figure of merit (Q c x V f); No reverse recovery charge; Soft switching reverse recovery waveform; Temperature independent switching behavior; High operating temperature (T j max 175C); Improved surge capability; Pb-free lead plating | Benefits: Higher safety margin against overvoltage and complements CoolMOS offer; Improved efficiency over all load conditions; Increased efficiency compared to Silicon Diode alternatives; Reduced EMI compared to snappier Silicon diode reverse recovery waveform; Highly stable switching performance; Reduced cooling requirements; Reduced risks of thermal runaway; RoHS compliant; Very high quality and high volume manufacturing capability | Target Applications: Telecom/server SMPS; Solar; UPS; PC power; LED/LCD TV; Motor drives; HID lighting
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
Generation 5 CoolSiC™ 650V Schottky Diodes
Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf).
Parte # Mfg. Descrizione Azione Prezzo
IDH04G65C5XKSA2
DISTI # V36:1790_17072378		Infineon Technologies AG650V SiC Schottky Diode0
  • 500000:$0.8877
  • 250000:$0.8893
  • 50000:$0.9801
  • 5000:$1.1180
  • 500:$1.1400
IDH04G65C5XKSA2
DISTI # IDH04G65C5XKSA2-ND		Infineon Technologies AGDIODE SCHOTTKY 650V 4A TO220-2-1
RoHS: Compliant
Min Qty: 1
Container: Tube		6970In Stock
  • 5000:$0.9521
  • 2500:$0.9887
  • 500:$1.2817
  • 100:$1.5600
  • 25:$1.8312
  • 10:$1.9410
  • 1:$2.1600
IDH04G65C5XKSA2
DISTI # IDH04G65C5XKSA2		Infineon Technologies AGDIODE SCHOTTKY 650V 4A TO220-2-1 - Tape and Reel (Alt: IDH04G65C5XKSA2)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 5000:$0.9299
  • 3000:$0.9469
  • 2000:$0.9799
  • 1000:$1.0169
  • 500:$1.0549
IDH04G65C5XKSA2
DISTI # SP001632402		Infineon Technologies AGDIODE SCHOTTKY 650V 4A TO220-2-1 (Alt: SP001632402)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.8709
  • 500:€0.9029
  • 100:€0.9379
  • 50:€0.9749
  • 25:€1.0159
  • 10:€1.1079
  • 1:€1.2189
IDH04G65C5XKSA2
DISTI # 726-IDH04G65C5XKSA2		Infineon Technologies AGSchottky Diodes & Rectifiers SIC DIODES
RoHS: Compliant		1498
  • 1:$2.1500
  • 10:$1.8300
  • 100:$1.4600
  • 500:$1.2800
  • 1000:$1.0600
  • 2500:$0.9890
  • 5000:$0.9530
Immagine Parte # Descrizione
UCC5390SCD

Mfr.#: UCC5390SCD

OMO.#: OMO-UCC5390SCD

 Gate Drivers 10A/10A 3-kVRMS Sing ChanelIsolGateDriver
BSS123W

Mfr.#: BSS123W

OMO.#: OMO-BSS123W

 MOSFET 100V NCH ENHANCEMENT MODE TRANSISTOR
FFSP0865A

Mfr.#: FFSP0865A

OMO.#: OMO-FFSP0865A

 Schottky Diodes & Rectifiers SIC TO220 SBD 8A 650V
STPS40H100CW

Mfr.#: STPS40H100CW

OMO.#: OMO-STPS40H100CW

 Schottky Diodes & Rectifiers 2X20 Amp 100 Volt
STPSC20065D

Mfr.#: STPSC20065D

OMO.#: OMO-STPSC20065D

 Schottky Diodes & Rectifiers 650 V power Schottky silicon carbide diode
OM-O2SP

Mfr.#: OM-O2SP

OMO.#: OMO-OM-O2SP

 System-On-Modules - SOM Omega2S+ Module, Surface Mount Package
STPSC20065D

Mfr.#: STPSC20065D

OMO.#: OMO-STPSC20065D-STMICROELECTRONICS

 DIODE SCHOTTKY 650V 20A TO220AC
BSS123W

Mfr.#: BSS123W

OMO.#: OMO-BSS123W-ON-SEMICONDUCTOR

 MOSFET N-CH 100V 0.17A SOT-323
UCC5390SCD

Mfr.#: UCC5390SCD

OMO.#: OMO-UCC5390SCD-TEXAS-INSTRUMENTS

 UCC5390SCD
FFSP0865A

Mfr.#: FFSP0865A

OMO.#: OMO-FFSP0865A-ON-SEMICONDUCTOR

 DIODE SCHOTTKY 650V 13A TO220-2
Disponibilità
Azione:
Available
Su ordine:
1984
Inserisci la quantità:
Il prezzo attuale di IDH04G65C5XKSA2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,15 USD
2,15 USD
10
1,83 USD
18,30 USD
100
1,46 USD
146,00 USD
500
1,28 USD
640,00 USD
1000
1,06 USD
1 060,00 USD
2500
0,99 USD
2 472,50 USD
5000
0,95 USD
4 765,00 USD
10000
0,92 USD
9 160,00 USD
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