SI3851DV-T1-GE3

Mfr. #:: SI3851DV-T1-GE3
Produttore:: Vishay / Siliconix
Descrizione:: RF Bipolar Transistors MOSFET 30V 1.8A 1.15W 200mohm @ 10V
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI3851DV-T1-GE3 Scheda dati
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Maggiori informazioni:: SI3851DV-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: VISHAY

categoria di prodotto: Chip IC

Confezione: Bobina

Alias parziali: SI3851DV-GE3

Unità di peso: 0.000705 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: TSOP-6

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Singolo con diodo Schottky

Tipo a transistor: 1 P-Channel

Pd-Power-Dissipazione: 830 mW

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 1.6 A

Vds-Drain-Source-Breakdown-Voltage: - 30 V

Rds-On-Drain-Source-Resistenza: 200 mOhms

Polarità del transistor: Canale P

Tags: SI3851DV-T, SI3851, SI385, SI38, SI3

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3851DV-T1-GE3 Descrizione

***et: P-CH TSOP-6 30V 200MOHM @ 10V W/ 0.5A SCHOTTKY DIODE

***ment14 APAC: P CHANNEL MOSFET, -30V, 1.8A; Transistor Polarity:P Channel + Schottky Diode; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V

***ark: P CHANNEL MOSFET, -30V, 1.8A; Transistor Polarity:P Channel / Schottky Diode; Continuous Drain Current, Id:1.8A; Drain Source Voltage, Vds:-30V; On Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:-10V ;RoHS Compliant: Yes

SI3851DV-T1-GE3 Maggiori informazioni

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI3851DV-T1-GE3 DISTI # SI3851DV-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V ±1.6A 8-Pin TSOP T/R - Tape and Reel (Alt: SI3851DV-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3629 6000:$0.3529 12000:$0.3379 18000:$0.3289 30000:$0.3199
SI3851DV-T1-GE3 DISTI # 781-SI3851DV-GE3	Vishay Intertechnologies	MOSFET 30V 1.8A 1.15W 200mohm @ 10V RoHS: Compliant	0	3000:$0.3500 6000:$0.3330 9000:$0.3210 24000:$0.3100

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI3851DV-T1-GE3 OMO.#: OMO-SI3851DV-T1-GE3	MOSFET 30V 1.8A 1.15W 200mohm @ 10V
	Mfr.#: SI3851DV-T1-E3 OMO.#: OMO-SI3851DV-T1-E3	MOSFET 30V 1.8A 1.15W
	Mfr.#: SI3851DV-T1-GE3 OMO.#: OMO-SI3851DV-T1-GE3-317	RF Bipolar Transistors MOSFET 30V 1.8A 1.15W 200mohm @ 10V
	Mfr.#: SI3851DV OMO.#: OMO-SI3851DV-1190	Nuovo e originale
	Mfr.#: SI3851DV-T1 OMO.#: OMO-SI3851DV-T1-1190	Nuovo e originale
	Mfr.#: SI3851DV-T1-E3 OMO.#: OMO-SI3851DV-T1-E3-VISHAY	MOSFET P-CH 30V 1.6A 6-TSOP
	Mfr.#: SI3851DV-T1-ES OMO.#: OMO-SI3851DV-T1-ES-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 5500
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Il prezzo attuale di SI3851DV-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,46 USD~~; ~~0,46 USD~~

10: ~~0,44 USD~~; ~~4,42 USD~~

100: ~~0,42 USD~~; ~~41,85 USD~~

500: ~~0,40 USD~~; ~~197,65 USD~~

1000: ~~0,37 USD~~; ~~372,00 USD~~

Iniziare con

SI3851DV-T 4
SI3851 5
SI385 15
SI38 74
SI3 1735

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SI3851DV-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes