MJD45H11-1G

Mfr. #:: MJD45H11-1G
Produttore:: ON Semiconductor
Descrizione:: Bipolar Transistors - BJT 8A 80V 20W PNP
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: MJD45H11-1G Scheda dati
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HTML Datasheet:: MJD45H11-1G Datasheet MJD45H11-1G Datasheet (P4-P6)MJD45H11-1G Datasheet (P7-P9)
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: ON Semiconductor

Categoria di prodotto:: Transistor bipolari - BJT

RoHS:: Y

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: DPAK-3

Polarità del transistor:: PNP

Configurazione:: Separare

Tensione collettore-emettitore VCEO Max:: 80 V

Collettore-tensione di base VCBO:: 5 V

Emettitore-tensione di base VEBO:: 5 V

Tensione di saturazione collettore-emettitore:: 1 V

Corrente massima del collettore CC:: 8 A

Guadagno larghezza di banda prodotto fT:: 90 MHz

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Serie:: MJD45H11

Altezza:: 6.35 mm

Lunghezza:: 6.73 mm

Confezione:: Tubo

Larghezza:: 2.38 mm

Marca:: ON Semiconductor

Corrente continua del collettore:: 8 A

Guadagno base/collettore DC hfe min:: 60

Pd - Dissipazione di potenza:: 20 W

Tipologia di prodotto:: BJT - Transistor bipolari

Quantità confezione di fabbrica:: 75

sottocategoria:: transistor

Unità di peso:: 0.012346 oz

Tags: MJD45H11-1, MJD45H, MJD45, MJD4, MJD

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MJD45H11-1G Descrizione

***ca Corp: Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

***emi: 8 A, 80 V PNP Power Bipolar Junction Transistor

***(Formerly Allied Electronics): ON Semi MJD45H11-1G PNP Bipolar Transistor, 8 A, 80 V, 3-Pin IPAK | ON Semiconductor MJD45H11-1G

*** Electronics: Trans GP BJT PNP 80V 8A Automotive 3-Pin(3+Tab) IPAK Rail

***ure Electronics: MJD Series 80 V 8 A Through Hole PNP Complementary Power Transistor

***ark: Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:80V; Dc Collector Current:8A; Power Dissipation Pd:20W; Transistor Mounting:surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:90Mhz; Dc Current Gain Hfe:60Hfe Rohs Compliant: Yes

***th Star Micro: ...for general purpose power and switching such as output or driver stag applications such as switching regulators converters and power amplifiers.

***r Electronics: Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

***emi: 10 A, 60 V PNP Bipolar Power Transistor

***nell: MJD2955-001, SINGLE BIPOLAR TRANSISTORS;

***r Electronics: Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

***emi: 10 A, 60 V PNP Bipolar Power Transistor

***et: Trans GP BJT PNP 60V 10A 3-Pin(3+Tab) DPAK-3 Rail

***ark: BIPOLAR TRANSISTOR, PNP, -60V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ, ft:2MHz; Power Dissipation Pd:20W; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes

***r Electronics: Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

***emi: 6.0 A, 100 V PNP Bipolar Power Transistor

***p One Stop: Trans GP BJT PNP 100V 6A Automotive 3-Pin(3+Tab) IPAK Rail

***enic: 100V 20W 6A 15@3A4V 3MHz 1.5V@6A600mA PNP -65¡Í~+150¡Í@(Tj) IPAK Bipolar Transistors - BJT ROHS

***nell: TRANSISTOR, BIPOL, PNP, -100V; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 20W; DC Collector Current: -6A; DC Current Gain hFE: 15hFE; Transistor Ca

***ark: BIPOLAR TRANSISTOR, PNP, -100V, D-PAK-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:6A; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
MJD45H11-1G DISTI # V99:2348_07283998	ON Semiconductor	Trans GP BJT PNP 80V 8A Automotive 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	3267	1000:$0.2617 500:$0.3052 100:$0.3183 10:$0.4436 1:$0.5080
MJD45H11-1G DISTI # MJD45H11-1GOS-ND	ON Semiconductor	TRANS PNP 80V 8A IPAK RoHS: Compliant Min Qty: 1 Container: Tube	1925In Stock	1050:$0.3004 525:$0.3755 150:$0.4750 75:$0.5820 1:$0.7000
MJD45H11-1G DISTI # 29537138	ON Semiconductor	Trans GP BJT PNP 80V 8A Automotive 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	3267	1000:$0.2617 500:$0.2829 100:$0.3185 30:$0.4379
MJD45H11-1G DISTI # MJD45H11-1G	ON Semiconductor	Trans GP BJT PNP 80V 8A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: MJD45H11-1G) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 1850	1:$0.4629 10:$0.4619 25:$0.4599 50:$0.4589 100:$0.3229 500:$0.3219 1000:$0.2579
MJD45H11-1G DISTI # MJD45H11-1G	ON Semiconductor	Trans GP BJT PNP 80V 8A 3-Pin(3+Tab) IPAK Rail (Alt: MJD45H11-1G) RoHS: Compliant Min Qty: 1950	Asia - 9750	75:$1.6110 150:$0.3098 225:$0.2983 375:$0.2877 750:$0.2778 1875:$0.2685 3750:$0.2641
MJD45H11-1G. DISTI # 15AC3560	ON Semiconductor	Transistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:90MHz,Power Dissipation Pd:20W,DC Collector Current:-8A,DC Current Gain hFE:60hFE,No. of Pins:3Pins,Operating Temperature Max:150°C , RoHS Compliant: Yes	1850	1:$0.6700 10:$0.5550 100:$0.3580 500:$0.3230 1000:$0.2870 5000:$0.2420 10000:$0.2330
MJD45H11-1G DISTI # 70340245	ON Semiconductor	ON Semi MJD45H11-1G PNP Bipolar Transistor,8 A,80 V,3-Pin IPAK RoHS: Compliant	0	30:$0.2700 75:$0.2640 150:$0.2590 300:$0.2540
MJD45H11-1G DISTI # 863-MJD45H11-1G	ON Semiconductor	Bipolar Transistors - BJT 8A 80V 20W PNP RoHS: Compliant	2031	1:$0.6700 10:$0.5550 100:$0.3580 1000:$0.2870 2500:$0.2420 10000:$0.2330 25000:$0.2240
MJD45H11-001 DISTI # 863-MJD45H11-001	ON Semiconductor	Bipolar Transistors - BJT 8A 80V 20W PNP RoHS: Not compliant	0
MJD45H11-1G DISTI # 7905353	ON Semiconductor	PNP POWER TRANSISTOR 80V 8A 20W IPAK, PK	1230	15:£0.4630
MJD45H11-1G	ON Semiconductor	INSTOCK	22863
MJD45H11-1G DISTI # XSFP00000140183	ON SEMICONDUCTOR	Power Bipolar Transistor,8AI(C),80VV(BR)CEO,1-Element, PNP,Silicon,Plastic/Epoxy,3Pin RoHS: Compliant	20190	450:$0.3200 20190:$0.3000
MJD45H11-1G DISTI # C1S541900516782	ON Semiconductor	Trans GP BJT PNP 80V 8A 1750mW Automotive 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	3267	1000:$0.2617 500:$0.3052 10:$0.4436
MJD45H11-1G DISTI # 2727981	ON Semiconductor	TRANSISTOR, PNP, -80V, -8A, TO-251 RoHS: Compliant	892	5:£0.4790 25:£0.4430 100:£0.2740 250:£0.2440 500:£0.2150
MJD45H11-1G DISTI # 2727981	ON Semiconductor	TRANSISTOR, PNP, -80V, -8A, TO-251 RoHS: Compliant	904	1:$1.0700 10:$0.8780 100:$0.5670 1000:$0.4550 2500:$0.3840 10000:$0.3690 25000:$0.3550 50000:$0.3490

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Disponibilità

Azione:: Available
Su ordine:: 1984
Inserisci la quantità:

Il prezzo attuale di MJD45H11-1G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,67 USD~~; ~~0,67 USD~~

10: ~~0,55 USD~~; ~~5,55 USD~~

100: ~~0,36 USD~~; ~~35,80 USD~~

1000: ~~0,29 USD~~; ~~287,00 USD~~

2500: ~~0,24 USD~~; ~~605,00 USD~~

10000: ~~0,23 USD~~; ~~2 330,00 USD~~

25000: ~~0,22 USD~~; ~~5 600,00 USD~~

50000: ~~0,22 USD~~; ~~11 000,00 USD~~

Iniziare con

MJD45H11-1 3
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MJD45 32
MJD4 128
MJD 474

MJD45H11-1G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes