MJD44H11-1G

MJD44H11-1G
Mfr. #:
MJD44H11-1G
Produttore:
ON Semiconductor
Descrizione:
Bipolar Transistors - BJT 8A 80V 20W NPN
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
MJD44H11-1G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MJD44H11-1G DatasheetMJD44H11-1G Datasheet (P4-P6)MJD44H11-1G Datasheet (P7-P9)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Stile di montaggio:
Foro passante
Pacchetto/custodia:
DPAK-3
Polarità del transistor:
NPN
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
80 V
Collettore-tensione di base VCBO:
5 V
Emettitore-tensione di base VEBO:
5 V
Tensione di saturazione collettore-emettitore:
1 V
Corrente massima del collettore CC:
8 A
Guadagno larghezza di banda prodotto fT:
85 MHz
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
MJD44H11
Altezza:
6.35 mm
Lunghezza:
6.73 mm
Confezione:
Tubo
Larghezza:
2.38 mm
Marca:
ON Semiconductor
Corrente continua del collettore:
8 A
Guadagno base/collettore DC hfe min:
60
Pd - Dissipazione di potenza:
20 W
Tipologia di prodotto:
BJT - Transistor bipolari
Quantità confezione di fabbrica:
75
sottocategoria:
transistor
Unità di peso:
0.012346 oz
Tags
MJD44H11-1, MJD44H1, MJD44H, MJD44, MJD4, MJD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icontronic
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
***emi
8 A, 80 V NPN Bipolar Power Transistor
***p One Stop
Trans GP BJT NPN 80V 8A 1750mW Automotive 3-Pin(3+Tab) IPAK Tube
***ure Electronics
MJD44H11 Series 80 V 8 A 1.75 W NPN Complementary Power Transistor - IPAK-3
***nell
TRANSISTOR, NPN, 80V, 8A, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 85MHz; Power Dissipation Pd: 20W; DC Collector Current: 8A; DC Current Gain hFE: 60hFE; Transistor C
***th Star Micro
...for general purpose power and switching such as output or driver stag applications such as switching regulators converters and power amplifiers.
***ure Electronics
NPN 1.75 W 80 V 8 A Surface Mount Epitaxial Silicon Transistor - TO-252-3
***r Electronics
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-251AA, Plastic/Epoxy, 3 Pin
***et
Trans GP BJT NPN 80V 8A 3-Pin(3+Tab) IPAK Rail
*** Electronic Components
Bipolar Transistors - BJT NPN/80V/8A
***emi
Medium Power NPN Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
***et
Transistor GP BJT NPN 45V 4A 3-Pin TO-225AA
***nell
TRANSISTOR, NPN TO-126; Transistor Type:Power General Purpose; Transistor Polarity:NPN; Voltage, Vceo:45V; Current, Ic Continuous a Max:4A; Hfe, Min:40; Case Style:TO-126; Current, Ic Max:4A; Current, Ic hFE:2A; Pins, No. of:3; Power, Ptot:36W; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vcbo:45V; ft, Min:3MHz
***ca Corp
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
***emi
2.0 A, 100 V NPN Darlington Bipolar Power Transistor
***(Formerly Allied Electronics)
ON Semi MJD112-1G NPN Darlington Transistor; 2 A 100 V HFE:1000; 3-Pin IPAK
***ure Electronics
MJD Series 100 V 2 A Through Hole NPN Complementary Darlington Power Transistor
***p One Stop
Trans Darlington NPN 100V 2A 1750mW Automotive 3-Pin(3+Tab) IPAK Tube
***th Star Micro
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.
***nell
TRANSISTOR, NPN, 100V, 2A, TO-251; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 20W; DC Collector Current: 2A; DC Current Gain hFE: 200hFE; Transisto
***ark
DARLINGTON TRANSISTOR, NPN, 100V, DPAK-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
MJD44H11-1G
DISTI # V36:1790_07277230
ON SemiconductorTrans GP BJT NPN 80V 8A Automotive 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
2211
  • 9000:$0.1661
  • 6000:$0.1845
  • 3000:$0.2051
  • 2100:$0.2359
MJD44H11-1G
DISTI # V99:2348_07277230
ON SemiconductorTrans GP BJT NPN 80V 8A Automotive 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
123
  • 50000:$0.1585
  • 25000:$0.1603
  • 10000:$0.1781
  • 2500:$0.1979
  • 1000:$0.2287
  • 100:$0.2795
  • 10:$0.3829
  • 1:$0.4464
MJD44H11-1G
DISTI # MJD44H11-1GOS-ND
ON SemiconductorTRANS NPN 80V 8A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube
2628In Stock
  • 1050:$0.2705
  • 525:$0.3381
  • 150:$0.4277
  • 75:$0.5240
  • 1:$0.6300
MJD44H11-1G
DISTI # 25679300
ON SemiconductorTrans GP BJT NPN 80V 8A Automotive 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
2175
  • 100:$0.2774
  • 35:$0.3805
MJD44H11-1G
DISTI # 30228406
ON SemiconductorTrans GP BJT NPN 80V 8A Automotive 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
123
  • 100:$0.2774
  • 33:$0.3805
MJD44H11-1G
DISTI # 30605368
ON SemiconductorTrans GP BJT NPN 80V 8A Automotive 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
12
  • 11:$0.4424
MJD44H11-1G
DISTI # MJD44H11-1G
ON SemiconductorTrans GP BJT NPN 80V 8A 3-Pin(3+Tab) IPAK Rail (Alt: MJD44H11-1G)
RoHS: Compliant
Min Qty: 2100
Asia - 10500
  • 75:$1.2483
  • 150:$0.2401
  • 225:$0.2312
  • 375:$0.2229
  • 750:$0.2152
  • 1875:$0.2081
  • 3750:$0.2046
MJD44H11-1G
DISTI # MJD44H11-1G
ON SemiconductorTrans GP BJT NPN 80V 8A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: MJD44H11-1G)
RoHS: Compliant
Min Qty: 1
Container: Tube
Americas - 195
  • 1:$0.4049
  • 10:$0.3439
  • 25:$0.3429
  • 50:$0.3419
  • 100:$0.2499
  • 500:$0.2489
  • 1000:$0.2319
MJD44H11-1G
DISTI # 30AC9900
ON SemiconductorTRANSISTOR, NPN, 80V, 8A, TO-252,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:85MHz,Power Dissipation Pd:20W,DC Collector Current:8A,DC Current Gain hFE:60hFE,Transistor Case , RoHS Compliant: Yes916
  • 1:$0.6540
  • 10:$0.5230
  • 100:$0.3540
  • 500:$0.3060
  • 1000:$0.2670
  • 2500:$0.2160
  • 10000:$0.2090
MJD44H11-1G
DISTI # 863-MJD44H11-1G
ON SemiconductorBipolar Transistors - BJT 8A 80V 20W NPN
RoHS: Compliant
6109
  • 1:$0.6100
  • 10:$0.5000
  • 100:$0.3220
  • 1000:$0.2580
  • 2500:$0.2180
  • 10000:$0.2100
  • 25000:$0.2020
MJD44H11-001
DISTI # 863-MJD44H11-001
ON SemiconductorBipolar Transistors - BJT 8A 80V 20W NPN
RoHS: Not compliant
0
    MJD44H11-1GON Semiconductor 
    RoHS: Not Compliant
    4950
    • 1000:$0.2700
    • 500:$0.2800
    • 100:$0.2900
    • 25:$0.3000
    • 1:$0.3300
    MJD44H11-1GON SemiconductorINSTOCK12163
      MJD44H11-1G
      DISTI # 2774791
      ON SemiconductorTRANSISTOR, NPN, 80V, 8A, TO-252
      RoHS: Compliant
      915
      • 5:£0.4320
      • 25:£0.4030
      • 100:£0.2460
      • 250:£0.2200
      • 500:£0.1930
      MJD44H11-1G
      DISTI # 2774791
      ON SemiconductorTRANSISTOR, NPN, 80V, 8A, TO-252
      RoHS: Compliant
      911
      • 1:$0.9430
      • 10:$0.8090
      • 100:$0.5520
      • 250:$0.4530
      • 500:$0.3710
      • 1000:$0.3430
      MJD44H11-1G
      DISTI # C1S541900420634
      ON SemiconductorTrans GP BJT NPN 80V 8A 1750mW Automotive 3-Pin(3+Tab) IPAK Tube
      RoHS: Compliant
      12
      • 10:$0.3470
      • 1:$1.8200
      MJD44H11-1G
      DISTI # C1S541900119525
      ON SemiconductorTrans GP BJT NPN 80V 8A 1750mW Automotive 3-Pin(3+Tab) IPAK Tube
      RoHS: Compliant
      123
      • 100:$0.2795
      • 10:$0.3829
      Immagine Parte # Descrizione
      MJD45H11-1G

      Mfr.#: MJD45H11-1G

      OMO.#: OMO-MJD45H11-1G

      Bipolar Transistors - BJT 8A 80V 20W PNP
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      Disponibilità
      Azione:
      Available
      Su ordine:
      1988
      Inserisci la quantità:
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      Prezzo di riferimento (USD)
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      0,61 USD
      0,61 USD
      10
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      5,00 USD
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      32,20 USD
      1000
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      258,00 USD
      2500
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      545,00 USD
      10000
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      25000
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