CMXT3946 TR

CMXT3946 TR
Mfr. #:
CMXT3946 TR
Produttore:
Central Semiconductor
Descrizione:
Bipolar Transistors - BJT Dual Complementary
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
CMXT3946 TR Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Semiconduttore centrale
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Pacchetto/custodia:
SOT-26
Serie:
CMXT39
Confezione:
Bobina
Marca:
Semiconduttore centrale
Tipologia di prodotto:
BJT - Transistor bipolari
Quantità confezione di fabbrica:
3000
sottocategoria:
transistor
Nome depositato:
SUPERmini
Parte # Alias:
CMXT3946 PBFREE TR
Tags
CMXT394, CMXT39, CMXT3, CMXT, CMX
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans BJT Array NPN/PNP 40V 200mA 6-Pin SOT-26 T/R
***i-Key
TRANS NPN/PNP 200MA SOT26
***r Electronics
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon
***ical
Trans GP BJT PNP 40V 0.2A 700mW 6-Pin TSOT-23 T/R
***nell
TRANS, PNP, -40V, -0.2A, 150DEG C, 0.7W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Power Dissipation Pd: 700mW; DC Collector Current: -200mA; DC Current Gain hFE: 60hFE; Transistor Case Style: SuperSO
***rchild Semiconductor
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced from Process 66.
*** Electronic Components
Bipolar Transistors - BJT NPN & PNP Transistor General Purpose
***Yang
Trans GP BJT NPN/PNP 40V 0.2A 6-Pin SuperSOT T/R - Tape and Reel
***ure Electronics
NPN/PNP 40 V 200 mA 700 mW SMT General Purpose Amplifier - SSOT-6
*** Stop Electro
RF Small Signal Bipolar Transistor, 0.2A I(C), 2-Element, Silicon, NPN and PNP
***nell
TRANS, NPN/PNP, 40V, 0.2A, SUPERSOT; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 40V; Power Dissipation Pd: 700mW; DC Collector Current: 200mA; DC Current Gain hFE: 30hFE; Transistor Case Style: SuperSOT
***ark
Bipolar Transistor; Transistor Polarity:NPN & PNP; Power Dissipation, Pd:0.7W; DC Current Gain Min (hfe):30; Package/Case:SuperSOT-6; C-E Breakdown Voltage:40V; DC Collector Current:200A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
***rchild Semiconductor
This complementary device is designed for use as a general-purpose amplifier and switch, The useful dynamic range extends to 100 mA as a switch and 100 MHz as an amplifier. Sourced from Process 23 and 66. See FFB3904 (NPN) and FFB3906 (PNP) for characteristics.
***eco
Transistor General Purpose BJT NPN 40 Volt 0.5 Amp 6-Pin SuperSOT Tape and Reel
*** Source Electronics
TRANS 2NPN 40V 0.5A 6SSOT / Trans GP BJT NPN 45V 0.5A 700mW 6-Pin TSOT-23 T/R
*** Stop Electro
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon
***nell
BIPOLAR TRANSISTOR, QUAD NPN, 40V SSOT-6
***rchild Semiconductor
This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.
***ure Electronics
ZXT10P40DE6 Series 40 V 2 A PNP Low Saturation Switching Transistor SOT-23-6
***ark
Trans, Pnp, 40V, 2A, 150Deg C, 1.7W Rohs Compliant: Yes |Diodes Inc. ZXT10P40DE6TA
***ical
Trans GP BJT PNP 40V 2A 1700mW 6-Pin SOT-23 T/R
***p One Stop Global
Trans GP BJT NPN 30V 1A 1250mW 6-Pin TSMT T/R
***i-Key
TRANS DUAL NPN 30V 1A 6TSMT
***horized Procurement Solutions
OEMs, CMs ONLY (NO BROKERS)
***p One Stop
Trans GP BJT PNP 30V 1.5A 6-Pin TSMT T/R
***i-Key
TRANS PNP 30V 1.5A TSMT6
***horized Procurement Solutions
OEMs, CMs ONLY (NO BROKERS)
Immagine Parte # Descrizione
NSS40300DDR2G

Mfr.#: NSS40300DDR2G

OMO.#: OMO-NSS40300DDR2G

Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP
NSS40300MDR2G

Mfr.#: NSS40300MDR2G

OMO.#: OMO-NSS40300MDR2G

Bipolar Transistors - BJT 40V 6A LOW VCE(SAT) DUAL PNP
MMBFJ202

Mfr.#: MMBFJ202

OMO.#: OMO-MMBFJ202

JFET N-Channel Transistor General Purpose
DN2535N3-G-P003

Mfr.#: DN2535N3-G-P003

OMO.#: OMO-DN2535N3-G-P003

MOSFET N-Channel MOSFET 350V 0.12A 3P TO-92
RC2010JK-071KL

Mfr.#: RC2010JK-071KL

OMO.#: OMO-RC2010JK-071KL

Thick Film Resistors - SMD 1K OHM 5%
DN2535N3-G-P003

Mfr.#: DN2535N3-G-P003

OMO.#: OMO-DN2535N3-G-P003-MICROCHIP-TECHNOLOGY

MOSFET N-CH 350V 0.12A TO92-3
NSS40300DDR2G

Mfr.#: NSS40300DDR2G

OMO.#: OMO-NSS40300DDR2G-ON-SEMICONDUCTOR

Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP
NSS40300MDR2G

Mfr.#: NSS40300MDR2G

OMO.#: OMO-NSS40300MDR2G-ON-SEMICONDUCTOR

Bipolar Transistors - BJT 40V 6A LOW VCE(SAT) DUAL PNP
RC2010FK-0710KL

Mfr.#: RC2010FK-0710KL

OMO.#: OMO-RC2010FK-0710KL-YAGEO

Thick Film Resistors - SMD 10K OHM 1%
RC2010JK-073K9L

Mfr.#: RC2010JK-073K9L

OMO.#: OMO-RC2010JK-073K9L-YAGEO

Thick Film Resistors - SMD 3.9K OHM 5%
Disponibilità
Azione:
Available
Su ordine:
1985
Inserisci la quantità:
Il prezzo attuale di CMXT3946 TR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,43 USD
0,43 USD
10
0,36 USD
3,62 USD
100
0,23 USD
22,80 USD
1000
0,17 USD
171,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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