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NSS40300DDR2G

NSS40300DDR2G
Mfr. #:
NSS40300DDR2G
Produttore:
ON Semiconductor
Descrizione:
Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NSS40300DDR2G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSS40300DDR2G DatasheetNSS40300DDR2G Datasheet (P4-P6)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOIC-Narrow-8
Polarità del transistor:
PNP
Configurazione:
Dual
Tensione collettore-emettitore VCEO Max:
- 40 V
Collettore-tensione di base VCBO:
- 40 V
Emettitore-tensione di base VEBO:
- 7 V
Tensione di saturazione collettore-emettitore:
0.135 V
Corrente massima del collettore CC:
- 6 A
Guadagno larghezza di banda prodotto fT:
100 MHz
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
NSS40300DD
Guadagno di corrente CC hFE Max:
250 at 10 mA, 2 V
Altezza:
1.5 mm
Lunghezza:
5 mm
Confezione:
Bobina
Larghezza:
4 mm
Marca:
ON Semiconductor
Corrente continua del collettore:
- 3 A
Guadagno base/collettore DC hfe min:
250
Pd - Dissipazione di potenza:
783 mW
Tipologia di prodotto:
BJT - Transistor bipolari
Quantità confezione di fabbrica:
2500
sottocategoria:
transistor
Unità di peso:
0.005044 oz
Tags
NSS40300, NSS403, NSS40, NSS4, NSS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R
***th Star Micro
ON Semiconductors e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
Parte # Mfg. Descrizione Azione Prezzo
NSS40300DDR2G
DISTI # NSS40300DDR2GOSCT-ND		ON SemiconductorTRANS 2PNP 40V 3A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2445In Stock
  • 1000:$0.3288
  • 500:$0.4110
  • 100:$0.5199
  • 10:$0.6780
  • 1:$0.7700
NSS40300DDR2G
DISTI # NSS40300DDR2GOSDKR-ND		ON SemiconductorTRANS 2PNP 40V 3A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2445In Stock
  • 1000:$0.3288
  • 500:$0.4110
  • 100:$0.5199
  • 10:$0.6780
  • 1:$0.7700
NSS40300DDR2G
DISTI # NSS40300DDR2GOSTR-ND		ON SemiconductorTRANS 2PNP 40V 3A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 12500:$0.2660
  • 5000:$0.2693
  • 2500:$0.2893
NSS40300DDR2G
DISTI # NSS40300DDR2G		ON SemiconductorTrans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R (Alt: NSS40300DDR2G)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.2399
  • 15000:€0.2589
  • 10000:€0.2799
  • 5000:€0.3059
  • 2500:€0.3739
NSS40300DDR2G
DISTI # NSS40300DDR2G		ON SemiconductorTrans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R - Bulk (Alt: NSS40300DDR2G)
RoHS: Compliant
Min Qty: 1191
Container: Bulk		Americas - 0
  • 11910:$0.2589
  • 5955:$0.2649
  • 3573:$0.2689
  • 2382:$0.2719
  • 1191:$0.2739
NSS40300DDR2G
DISTI # NSS40300DDR2G		ON SemiconductorTrans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R - Tape and Reel (Alt: NSS40300DDR2G)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2339
  • 15000:$0.2399
  • 10000:$0.2429
  • 5000:$0.2459
  • 2500:$0.2479
NSS40300DDR2G
DISTI # 863-NSS40300DDR2G		ON SemiconductorBipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP
RoHS: Compliant		5043
  • 1:$0.7100
  • 10:$0.5890
  • 100:$0.3800
  • 1000:$0.3040
  • 2500:$0.2570
  • 10000:$0.2480
  • 25000:$0.2380
NSS40300DDR2GON SemiconductorSmall Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon
RoHS: Compliant		54821
  • 1000:$0.2800
  • 500:$0.2900
  • 100:$0.3000
  • 25:$0.3200
  • 1:$0.3400
NSS40300DDR2GON Semiconductor 449
    NSS40300DDR2GON SemiconductorDual 40 V, 6.0 A, Low VCE(sat) PNP Transistor398
    • 1:$0.4400
    • 100:$0.3400
    • 500:$0.3100
    • 1000:$0.2900
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    Disponibilità
    Azione:
    Available
    Su ordine:
    1988
    Inserisci la quantità:
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    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,71 USD
    0,71 USD
    10
    0,59 USD
    5,89 USD
    100
    0,38 USD
    38,00 USD
    1000
    0,30 USD
    304,00 USD
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