BSC886N03LSGATMA1

BSC886N03LSGATMA1
Mfr. #:
BSC886N03LSGATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET LV POWER MOS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSC886N03LSGATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TDSON-8
Confezione:
Bobina
Altezza:
1.27 mm
Lunghezza:
5.9 mm
Larghezza:
5.15 mm
Marca:
Tecnologie Infineon
Tipologia di prodotto:
MOSFET
sottocategoria:
MOSFET
Parte # Alias:
BSC886N03LS BSC886N3LSGXT G SP000475950
Tags
BSC886N03LSG, BSC886, BSC8, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
BSC886N03LSGATMA1
DISTI # BSC886N03LSGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 30V 65A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4185In Stock
  • 1000:$0.3093
  • 500:$0.3866
  • 100:$0.5219
  • 10:$0.6770
  • 1:$0.7700
BSC886N03LSGATMA1
DISTI # BSC886N03LSGATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 30V 65A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4185In Stock
  • 1000:$0.3093
  • 500:$0.3866
  • 100:$0.5219
  • 10:$0.6770
  • 1:$0.7700
BSC886N03LSGATMA1
DISTI # BSC886N03LSGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 65A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.2533
BSC886N03LSGXT
DISTI # BSC886N03LSGATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC886N03LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.1959
  • 10000:$0.1889
  • 20000:$0.1819
  • 30000:$0.1759
  • 50000:$0.1729
BSC886N03LSGATMA1
DISTI # 97Y1253
Infineon Technologies AGMOSFET, N-CH, 30V, 65A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:65A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.005ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes4977
  • 1:$0.7700
  • 10:$0.6770
  • 25:$0.6250
  • 50:$0.5730
  • 100:$0.5210
  • 250:$0.4540
  • 500:$0.3860
  • 1000:$0.3090
BSC886N03LS G
DISTI # 726-BSC886N03LSG
Infineon Technologies AGMOSFET N-Ch 30V 65A TDSON-8
RoHS: Compliant
0
  • 1:$0.6400
  • 10:$0.5290
  • 100:$0.3420
  • 1000:$0.2730
BSC886N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
5000
  • 1000:$0.2100
  • 500:$0.2200
  • 100:$0.2300
  • 25:$0.2400
  • 1:$0.2600
BSC886N03LSGATMA1
DISTI # 2617422
Infineon Technologies AGMOSFET, N-CH, 30V, 65A, PG-TDSON-8
RoHS: Compliant
4977
  • 1:$1.2300
  • 10:$1.0800
  • 100:$0.8320
  • 500:$0.6170
  • 1000:$0.4930
BSC886N03LSGATMA1
DISTI # 2617422
Infineon Technologies AGMOSFET, N-CH, 30V, 65A, PG-TDSON-8
RoHS: Compliant
4977
  • 5:£0.5960
  • 25:£0.5400
  • 100:£0.4080
  • 250:£0.3550
  • 500:£0.3020
Immagine Parte # Descrizione
BSC886N03LS G

Mfr.#: BSC886N03LS G

OMO.#: OMO-BSC886N03LS-G

MOSFET N-Ch 30V 65A TDSON-8
BSC886N03LSGATMA1

Mfr.#: BSC886N03LSGATMA1

OMO.#: OMO-BSC886N03LSGATMA1

MOSFET LV POWER MOS
BSC886N03LS

Mfr.#: BSC886N03LS

OMO.#: OMO-BSC886N03LS-1190

Nuovo e originale
BSC886N03LS G

Mfr.#: BSC886N03LS G

OMO.#: OMO-BSC886N03LS-G-1190

Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
BSC886N03LSG

Mfr.#: BSC886N03LSG

OMO.#: OMO-BSC886N03LSG-1190

Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC886N03LSG E8178

Mfr.#: BSC886N03LSG E8178

OMO.#: OMO-BSC886N03LSG-E8178-1190

Nuovo e originale
BSC886N03LSGATMA1

Mfr.#: BSC886N03LSGATMA1

OMO.#: OMO-BSC886N03LSGATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 65A TDSON-8
BSC886N03LSGATMA1 , TDZF

Mfr.#: BSC886N03LSGATMA1 , TDZF

OMO.#: OMO-BSC886N03LSGATMA1-TDZF-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
1000
Inserisci la quantità:
Il prezzo attuale di BSC886N03LSGATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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