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BSC886N03LS G

BSC886N03LS G
Mfr. #:
BSC886N03LS G
Produttore:
Infineon Technologies
Descrizione:
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSC886N03LS G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
INFINEON
categoria di prodotto
FET - Single
Serie
BSC886N03
Confezione
Bobina
Alias ​​parziali
BSC886N03LSGATMA1 BSC886N03LSGXT SP000475950
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TDSON-8
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Singolo Doppio Scarico Tripla Sorgente
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
2.5 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
3 ns
Ora di alzarsi
3.2 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
65 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistenza
6 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
18 ns
Tempo di ritardo all'accensione tipico
4.2 ns
Modalità canale
Aumento
Tags
BSC886N03LSG, BSC886, BSC8, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
BSC886N03LS G
DISTI # 30579819		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
RoHS: Compliant		10000
  • 77:$0.2856
BSC886N03LSGATMA1
DISTI # BSC886N03LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 65A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4185In Stock
  • 1000:$0.3093
  • 500:$0.3866
  • 100:$0.5219
  • 10:$0.6770
  • 1:$0.7700
BSC886N03LSGATMA1
DISTI # BSC886N03LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 65A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4185In Stock
  • 1000:$0.3093
  • 500:$0.3866
  • 100:$0.5219
  • 10:$0.6770
  • 1:$0.7700
BSC886N03LSGATMA1
DISTI # BSC886N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 65A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.2533
BSC886N03LS G
DISTI # C1S322000282117		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
RoHS: Compliant		10000
  • 50:$0.2240
  • 10:$0.2630
BSC886N03LS G
DISTI # BSC886N03LS G		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R (Alt: BSC886N03LS G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC886N03LS G
    DISTI # SP000475950    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R (Alt: SP000475950)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel    		Europe - 0
    • 5000:€0.3179
    • 10000:€0.2699
    • 20000:€0.2399
    • 30000:€0.2159
    • 50000:€0.2009
    BSC886N03LSGXT
    DISTI # BSC886N03LSGATMA1    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC886N03LSGATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.1959
    • 10000:$0.1889
    • 20000:$0.1819
    • 30000:$0.1759
    • 50000:$0.1729
    BSC886N03LSGATMA1
    DISTI # 97Y1253    		Infineon Technologies AGMOSFET, N-CH, 30V, 65A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:65A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.005ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power , RoHS Compliant: Yes4977
    • 1:$0.8100
    • 10:$0.7070
    • 25:$0.6530
    • 50:$0.5990
    • 100:$0.5450
    • 250:$0.4750
    • 500:$0.4040
    • 1000:$0.3230
    BSC886N03LSGInfineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		9609
    • 1000:$0.2500
    • 500:$0.2600
    • 100:$0.2700
    • 25:$0.2900
    • 1:$0.3100
    BSC886N03LS GInfineon Technologies AG 
    RoHS: Not Compliant    		5000
    • 1000:$0.2400
    • 500:$0.2500
    • 100:$0.2600
    • 25:$0.2700
    • 1:$0.2900
    BSC886N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		5000
    • 1000:$0.2400
    • 500:$0.2500
    • 100:$0.2600
    • 25:$0.2700
    • 1:$0.2900
    BSC886N03LS G
    DISTI # 726-BSC886N03LSG    		Infineon Technologies AGMOSFET N-Ch 30V 65A TDSON-8
    RoHS: Compliant    		0
    • 1:$0.6400
    • 10:$0.5290
    • 100:$0.3420
    • 1000:$0.2730
    • 5000:$0.2310
    BSC886N03LSGInfineon Technologies AG 1500
      BSC886N03LSGATMA1
      DISTI # 2617422      		Infineon Technologies AGMOSFET, N-CH, 30V, 65A, PG-TDSON-8
      RoHS: Compliant      		4977
      • 1:$1.2200
      • 10:$1.0800
      • 100:$0.8260
      • 500:$0.6120
      • 1000:$0.4900
      BSC886N03LSGATMA1
      DISTI # 2617422      		Infineon Technologies AGMOSFET, N-CH, 30V, 65A, PG-TDSON-8
      RoHS: Compliant      		4977
      • 5:£0.6100
      • 25:£0.5510
      • 100:£0.4190
      • 250:£0.3650
      • 500:£0.3100
      Immagine Parte # Descrizione
      BSC886N03LS G

      Mfr.#: BSC886N03LS G

      OMO.#: OMO-BSC886N03LS-G

      		 MOSFET N-Ch 30V 65A TDSON-8
      BSC886N03LSGATMA1

      Mfr.#: BSC886N03LSGATMA1

      OMO.#: OMO-BSC886N03LSGATMA1

      		 MOSFET LV POWER MOS
      BSC886N03LS

      Mfr.#: BSC886N03LS

      OMO.#: OMO-BSC886N03LS-1190

      		 Nuovo e originale
      BSC886N03LS G

      Mfr.#: BSC886N03LS G

      OMO.#: OMO-BSC886N03LS-G-1190

      		 Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
      BSC886N03LSG

      Mfr.#: BSC886N03LSG

      OMO.#: OMO-BSC886N03LSG-1190

      		 Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      BSC886N03LSG E8178

      Mfr.#: BSC886N03LSG E8178

      OMO.#: OMO-BSC886N03LSG-E8178-1190

      		 Nuovo e originale
      BSC886N03LSGATMA1

      Mfr.#: BSC886N03LSGATMA1

      OMO.#: OMO-BSC886N03LSGATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 65A TDSON-8
      BSC886N03LSGATMA1 , TDZF

      Mfr.#: BSC886N03LSGATMA1 , TDZF

      OMO.#: OMO-BSC886N03LSGATMA1-TDZF-1190

      		 Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      1500
      Inserisci la quantità:
      Il prezzo attuale di BSC886N03LS G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      0,26 USD
      0,26 USD
      10
      0,24 USD
      2,42 USD
      100
      0,23 USD
      22,95 USD
      500
      0,22 USD
      108,40 USD
      1000
      0,20 USD
      204,00 USD
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