SI4346DY-T1-GE3

SI4346DY-T1-GE3
Mfr. #:
SI4346DY-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI4346DY-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4346DY-T1-GE3 DatasheetSI4346DY-T1-GE3 Datasheet (P4-P6)SI4346DY-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
E
Tecnologia:
si
Nome depositato:
TrenchFET
Confezione:
Bobina
Serie:
SI4
Marca:
Vishay / Siliconix
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Parte # Alias:
SI4346DY-GE3
Unità di peso:
0.006596 oz
Tags
SI4346D, SI4346, SI434, SI43, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R
***ment14 APAC
N CH MOSFET; Transistor Polarity:N Chann; N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:5.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):19mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.31W
Parte # Mfg. Descrizione Azione Prezzo
SI4346DY-T1-GE3
DISTI # SI4346DY-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 30V 5.9A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
  • 2500:$0.4158
SI4346DY-T1-GE3
DISTI # 15R4985
Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:5.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):19mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs Typ:2V,Power Dissipation Pd:1.31W , RoHS Compliant: Yes0
  • 1:$0.3700
  • 2500:$0.3680
  • 5000:$0.3570
  • 10000:$0.3430
SI4346DY-T1-GE3
DISTI # 84R8044
Vishay IntertechnologiesN CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:5.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):19mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.31W , RoHS Compliant: Yes0
  • 1:$1.0200
  • 10:$0.9610
  • 25:$0.8710
  • 50:$0.7850
  • 100:$0.7120
  • 250:$0.5970
  • 500:$0.5280
SI4346DY-T1-GE3
DISTI # 781-SI4346DY-GE3
Vishay IntertechnologiesMOSFET 30V 8.0A 2.5W 23mohm @ 10V
RoHS: Compliant
0
    SI4346DY-T1-GE3
    DISTI # 1867186
    Vishay IntertechnologiesN CH MOSFET
    RoHS: Compliant
    0
    • 2500:£0.4670
    Immagine Parte # Descrizione
    SI4346DY-T1-GE3

    Mfr.#: SI4346DY-T1-GE3

    OMO.#: OMO-SI4346DY-T1-GE3

    MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
    SI4346DY-T1-GE3

    Mfr.#: SI4346DY-T1-GE3

    OMO.#: OMO-SI4346DY-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 30V 8.0A 2.5W 23mohm @ 10V
    SI4346DY-T1

    Mfr.#: SI4346DY-T1

    OMO.#: OMO-SI4346DY-T1-1190

    Nuovo e originale
    SI4346DY-T1-E3

    Mfr.#: SI4346DY-T1-E3

    OMO.#: OMO-SI4346DY-T1-E3-VISHAY

    MOSFET N-CH 30V 5.9A 8-SOIC
    Disponibilità
    Azione:
    Available
    Su ordine:
    4000
    Inserisci la quantità:
    Il prezzo attuale di SI4346DY-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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